• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.11
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• pp.1111-1116
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• 2011

In this paper, a 60 GHz bidirectional active phase shifter with 130 nm CMOS is presented by replacing CMOS passive switchs in switched-line type phase shifter with Common Gate Amplifier(bidirectional amplifier). Bidirectional active phase shifter is composed of bidirectional amplifier blocks and passive delay line network blocks. The suitable topology of bidirectional amplifier block is CGA(Common Gate Amplifier) topology and matching circuits of input and output are symmetrical due to design same characteristic of it's forward and reverse way. The direction(forward and reverse way) and amplitude of amplification can be controlled by only one bias voltage($V_{DS}$) using combination bias circuit. And passive delay line network blocks are composed of microstrip line. An 1-bit phase shifter is fabricated by Dongbu HiTek 1P8M 130-nm CMOS technology and simulation results present -3 dB average insertion loss and respectively 90 degree and 180 degree phase shift at 60 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.16-22
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• 2006

Gigabit transimpedance amplifiers are realihzed in submicron CMOS technologies for Gigabit Ethernet applications. The regulated cascode technique is exploited to enhance the bandwidth and noise performance simultaneously so that it can isolate the large input parasitic capacitance including photodiode capacitance from the determination of the bandwidth. The 1.25Gb/s TIA implemented in a 0.6um CMOS technology shows the measured results of 58dBohm transimpedance gain, 950MHz bandwidth for a 0.5pF photodiode capacitance, 6.3pA/sqrt(Hz) average noise current spectral density, and 85mW power dissipation from a single 5V supply. In addition, a 10Gb/s TIA is realized in a 0.18um CMOS incorporating the RGC input and the inductive peaking techniques. It provides 59.4dBohm transimpedance gain, 8GHz bandwidth for a 0.25pF photodiode capacitance, 20pA/sqrt(Hz) noise current spectral density, and 14mW power consumption for a single 1.8V supply.

• Journal of the Institute of Convergence Signal Processing
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• v.9 no.2
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• pp.146-153
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• 2008

Integrated humidity sensor system with two stages operational amplifier has been designed and fabricated by $0.8{\mu}m$ analog mixed CMOS technology. The system (28 pin and $2mm{\times}4mm$) consisted of Wheatstone-bridge type humidity sensor, resistive type humidity sensor, temperature sensors and operational amplifier for signal amplification and process in one chip. The poly-nitride etch stop process has been tried to form the sensing area as well as trench in a standard CMOS process. This modified technique did not affect the CMOS devices in their essential characteristics and gave an allowance to fabricate the system on same chip by standard process. The operational amplifier showed the stable operation so that unity gain bandwidth was more than 5.46 MHz and slew rate was more than 10 V/uS, respectively. The drain current of n-channel humidity sensitive field effect transistor (HUSFET) increased from 0.54 mA to 0.68 mA as the relative humidity increased from 10 to 70 %RH.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1645-1648
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• 2006

We have developed a CMOS LTPS process, which requires only five photolithographic masks and only one ion doping step. Single TFTs, inverters, ring oscillators and shift registers were fabricated. N- and p-channel devices reached field effect mobilities of $173cm^2/Vs$ and $47cm^2/Vs$, respectively.

• Journal of Sensor Science and Technology
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• v.29 no.2
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• pp.82-88
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• 2020

In this paper, we propose a complementary metal-oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector using a double-tail comparator for high-speed and low-power operations. The GBT photodetector is based on a PMOSFET tied with a floating gate (n+ polysilicon) and a body that amplifies the photocurrent generated by incident light. A double-tail comparator compares an input signal with a reference voltage and returns the output signal as either 0 or 1. The signal processing speed and power consumption of a double-tail comparator are superior over those of conventional comparator. Further, the use of a double-sampling circuit reduces the standard deviation of the output voltages. Therefore, the proposed CMOS binary image sensor using a double-tail comparator might have advantages, such as low power consumption and high signal processing speed. The proposed CMOS binary image sensor is designed and simulated using the standard 0.18 ㎛ CMOS process.

• Journal of Sensor Science and Technology
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• v.18 no.6
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• pp.475-484
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• 2009

In this paper, an analysis of the complementary CMOS active pixel and readout circuit is carried out. Complementary pixel structure which is different from conventional 3TR APS structure consists of photo diode, reset PMOS, several NMOSs and PMOSs sets for complementary signals. Proposed CMOS image sensors pixel has been fabricated using 0.5 standard CMOS process. Measured results show that the output signal range is from 0.8 V to 3.8 V. This output signal range increased 125 % compared to conventional 3TR pixel in the condition of 5 V power supply.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.235-245
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• 2014

This paper presents an envelope tracking power amplifier using a standard CMOS process for the 3GPP long-term evolution transmitters. An efficiency of the CMOS power amplifier for the modulated signals can be improved using a highly efficient and wideband CMOS bias modulator. The CMOS PA is based on a two-stage differential common-source structure for high gain and large voltage swing. The bias modulator is based on a hybrid buck converter which consists of a linear stage and a switching stage. The dynamic load condition according to the envelope signal level is taken into account for the bias modulator design. By applying the bias modulator to the power amplifier, an overall efficiency of 41.7 % was achieved at an output power of 24 dBm using the 16-QAM uplink LTE signal. It is 5.3 % points higher than that of the power amplifier alone at the same output power and linearity.

• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.47-53
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• 2004

We present the design of ternary flip-flop which is based on ternary logic so as to process ternary data. These flip-flops are composed with ternary voltage mode NMAX, NMIN, INVERTER gates. These logic gate circuits are designed using CMOS and obtained the characteristics of a lower voltage, lower power consumption as compared to other gates. These circuits have been simulated with the electrical parameters of a standard 0.35um CMOS technology and 3.3Volts supply voltage. The architecture of proposed ternary flip-flop is highly modular and well suited for VLSI implementation, only using ternary gates.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.5
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• pp.419-425
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• 2017

This paper presents CMOS UWB RFIC based radar system for high speed target detection. The system can achieve resolution of 15 cm and detection range of 15 m. For developed system, single chip CMOS UWB IC is implemented. To reduce the measuring and processing time, envelope detection and equivalent time sampling technique are used. Measurement results show that the bandwidth and center frequency of UWB pulse can be adjusted in the range of 0.5 GHz~1.0 GHz, 3.5 GHz~4.5 GHz, respectively. Signal processing time including scan time over 15 m distance is about $150{\mu}sec$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.289-294
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• 2008

A 77 GHz 3-stage low noise amplifier (LNA) employing one common source and two cascode stages is developed using $0.13{\mu}m$ CMOS process. To compensate for the low gain which is caused by lossy silicon substrate and parasitic element of CMOS transistor, positive feedback technique using parasitic inductance of bypass capacitor is adopted to cascode stages. The developed LNA shows gain of 7.2 dB, Sl1 of -16.5 dB and S22 of -19.8 dB at 77 GHz. The return loss bandwidth of LNA is 71.6 to 80.9 GHz (12%). The die size is as small as $0.7mm\times0.8mm$ by using bias line as inter-stage matching networks. This LNA shows possibility of 77 GHz automotive RADAR system using $0.13{\mu}m$ CMOS process, which has advantage in cost compared to sub-100 nm CMOS process.