• Title/Summary/Keyword: CMOS VGA

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A 0.35um-CMOS low noise VGA (0.35um-CMOS 저잡음 VGA)

  • 정규영;한건희
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.197-200
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    • 2000
  • This paper proposes a CMOS low noise VGA. It describes the noise optimization method of the proposed VGA. The designed VGA provides of a 0 to 21.30dB gain variation and its bandwidth of 49MHz. The input reflected noise voltage is 4.84nV/sqrt-hz at 1MHz and noise figure is 14.53dB(Rs=50 Ω). The VGA was fabricated using a 0.35-${\mu}{\textrm}{m}$ CMOS technology.

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Design of VGA for MB-OFDM UWB (CMOS 0.18 μm 공정을 이용한 MB-OFDM UWB용 VGA 설계)

  • Lee Seung-Sik;Park Bong-Hyuk;Kim Jae-Young;Choi Sang-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.2 s.93
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    • pp.144-148
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    • 2005
  • In this paper, we have proposed VGA fur MB-OFDM UWB application using $CMOS\;0.18\;{\mu}m$ technique. The proposed VGA can vary power gain from 45 dB to -6 dB and 3 dB band width is more than 264 MHz. It has 3-stage cascade structure and DC offset cancellation. It consumes less, than 4 mA for 1.8 V bias voltage.

Design of a 2.5V 300MHz 80dB CMOS VGA Using a New Variable Degeneration Resistor (새로운 가변 Degeneration 저항을 사용한 2.5V 300MHz 80dB CMOS VGA 설계)

  • 권덕기;문요섭;김거성;박종태;유종근
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.9
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    • pp.673-684
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    • 2003
  • A degenerated differential pair has been widely used as a standard topology for digitally programmable CMOS VGAs. A variable degeneration resistor has been implemented using a resistor string or R-2R ladder with MOSFET switches. However, in the VGAs using these conventional methods, low-voltage and high-speed operation is very hard to achieve due to the dc voltage drop over the degeneration resistor. To overcome this problem a new variable degeneration resistor is proposed where the dc voltage drop is almost removed. Using the proposed gain control scheme, a low-voltage and high-speed CMOS VGA is designed. HSPICE simulation results using a 0.25${\mu}{\textrm}{m}$ CMOS process parameters show that the designed VGA provides a 3dB bandwidth of 360MHz and a 80dB gain control range in 2dB step. Gain errors are less than 0.4dB at 200MHz and less than l.4dB at 300MHz. The designed circuit consumes 10.8mA from a 2.5V supply and its die area is 1190${\mu}{\textrm}{m}$${\times}$360${\mu}{\textrm}{m}$.

A 2.5V 80dB 360MHz CMOS Variable Gain Amplifier (2.5V 80dB 360MHz CMOS 가변이득 증폭기)

  • 권덕기;박종태;유종근
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.983-986
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    • 2003
  • This paper describes a 2.5V 80dB 360MHz CMOS VGA. A new variable degeneration resistor is proposed where the dc voltage drop over the degeneration resistor is minimized and employed in designing a low-voltage and high-speed CMOS VGA. HSPICE simulation results using a 0.25${\mu}{\textrm}{m}$ CMOS process parameters show that the designed VGA provides a 3dB bandwidth of 360MHz and a 80dB gain control range in 2dB step. Gain errors are less than 0.4dB at 200MHz and less than 1.4dB at 300MHz. The designed circuit consumes 10.8mA from a 2.5V supply and its die area is 1190${\mu}{\textrm}{m}$$\times$360${\mu}{\textrm}{m}$.

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A New Variable Degeneration Resistor for Digitally Programmable CMOS VGA (디지털 방식의 이득조절 기능을 갖는 CMOS VGA를 위한 새로운 가변 축퇴 저항)

  • Kwon, Duck-Ki;Park, Jong-Tae;Yu, Chong-Gun
    • Journal of IKEEE
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    • v.7 no.1 s.12
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    • pp.43-55
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    • 2003
  • A degenerated differential pair has been widely used as a standard topology for digitally programmable CMOS VGAs. A variable degeneration resistor has been implemented using a resistor string or R-2R ladder with MOSFET switches. However, in the VGAs using these conventional methods, low-voltage and high-speed operation is very hard to achieve due to the dc voltage drop over the degeneration resistor. To overcome the problem a new variable degeneration resistor is proposed where the dc voltage drop is almost removed. The proposed gain control scheme makes it easy to implement a low-voltage and high-speed VGA. This paper describes the problems existed in conventional methods, the principle and advantages of the proposed scheme, and their performance comparison in detail. A CMOS VGA cell is designed using the proposed degeneration resistor. The 3dB bandwidths are greater than 650㎒ and the gain errors are less than 0.3dB in a gain control range from -12dB to +12dB in 6dB steps. It consumes 3.1㎃ from a 2.5V supply voltage.

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Design of Variable Gain Amplifier with a Gain Slope Controller in Multi-standard System (다중 표준 시스템을 위한 이득 곡선 제어기를 가진 가변이득 증폭기 설계)

  • Choi, Moon-Ho;Lee, Won-Young;Kim, Yeong-Seuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.4
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    • pp.321-328
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    • 2008
  • In this paper, variable gain amplifier(VGA) with a gain slope controller has been proposed and verified by circuit simulations and measurements. The proposed VGA has a gain control, gain slope switch and variable gain range. The input source coupled pair with diode connected load is used for VGA gain stage. The gain slope controller with switch can control VGA gain slope. The proposed VGA is fabricated in $0.18{\mu}m$ CMOS process for multi -standard wireless receiver. The proposed two stage VGA consumes min. 2.0 mW to max. 2.6 mW in gain control range and gives input IP3 of -3.77 dBm and NF of 28.7 dB at 1.8 V power supply under -25 dBm, 1 MHz input. The proposed VGA has 37 dB(-16 dB $\sim$ 21 dB) variable gain range, and 8 dB gain range control per 0.3 V control voltage, and can provide variable gain, positive and negative gain slope control, and gain range control. This VGA characteristics provide design flexibility in multi-standard wireless receiver.

Design of a CMOS Tx RF/IF Single Chip for PCS Band Applications (PCS 대역 송신용 CMOS RF/IF 단일 칩 설계)

  • Moon, Yo-Sup;Kwon, Duck-Ki;Kim, Keo-Sung;Park, Jong-Tae;Yu, Chong-Gun
    • Journal of IKEEE
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    • v.7 no.2 s.13
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    • pp.236-244
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    • 2003
  • In this paper, RF and IF circuits for mobile terminals which have usually been implemented using expensive BiCMOS processes are designed using CMOS circuits, and a Tx CMOS RF/IF single chip for PCS applications is designed. The designed circuit consists of an IF block including an IF PLL frequency synthesizer, an IF mixer, and a VGA and an RF block including a SSB RF mixer and a driver amplifier, and performs all transmit signal processing functions required between digital baseband and the power amplifier. The phase noise level of the designed IF PLL frequency synthesizer is -114dBc/Hz@100kHz and the lock time is less than $300{\mu}s$. It consumes 5.3mA from a 3V power supply. The conversion gain and OIP3 of the IF mixer block are 3.6dB and -11.3dBm. It consumes 5.3mA. The 3dB frequencies of the VGA are greater than 250MHz for all gain settings. The designed VGA consumes 10mA. The designed RF block exhibits a gain of 14.93dB and an OIP3 of 6.97dBm. The image and carrier suppressions are 35dBc and 31dBc, respectively. It consumes 63.4mA. The designed circuits are under fabrication using a $0.35{\mu}m$ CMOS process. The designed entire chip consumes 84mA from a 3V supply, and its area is $1.6㎜{\times}3.5㎜$.

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A Design of Non-Coherent CMOS IR-UWB Receiver (비동기식 CMOS IR-UWB 수신기의 설계 및 제작)

  • Ha, Min-Cheol;Park, Young-Jin;Eo, Yun-Seong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.9
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    • pp.1045-1050
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    • 2008
  • In this paper presents a CMOS RF receiver for IR-UWB wireless communications is presented. The impulse radio based UWB receiver adopts the non-coherent demodulation that simplifies the receiver architecture and reduces power consumption. The IR-UWB receiver consists of LNA, envelop detector, VGA, and comparator and the receiver including envelope detector, VGA, and comparator is fabricated on a single chip using $0.18{\mu}m$ CMOS technology. The measured sensitivity of IR-UWB receiver is down to -70 dBm and the BER $10^{-3}$, respectively at data rate 1 Mbps. The current consumption of IR-UWB receiver except external LNA is 5 mA at 1.8 V.

10MHz/77dB dynamic range CMOS linear-in-dB variable gain amplifiers (10MHz/77dB 다이내믹 영역을 가진 선형 가변 이득 증폭기)

  • Cha, Jin-Youp;Yeo, Hwan-Seok;Kim, Do-Hyung;Burm, Jin-Wook
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.8
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    • pp.16-21
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    • 2007
  • CMOS variable gain amplifier (VGA) IC designs for the structure monitoring systems of the telemetries were developed. A three stage cascaded VGA using a differential amplifier and a linear-in-dB controller is presented. A proposed VGA is a modified version of a conventional VGA such that the gain is controlled in a linear-in-dB fashion through the current ratio. The proposed VGA circuit introduced in this paper has a dynamic range of 77 dB with 1.5 dB gain steps. It also achieved a gain error of less than 1.5 dB over 77 dB gain range. The VGA can operate up to 10MHz dissipating 13.8 mW from a single 1.8 V supply. The core area of the VGA fabricated in a Magnachip $0.18{\mu}m$ standard CMOS process was about $430{\mu}m{\times}350{\mu}m$. According to measurement results, we can verify that the proposed method is reasonable with regard to the enhancement of dynamic range and the better linear-in-dB characteristics.

A CMOS RF Power Detector Using an AGC Loop (자동 이득제어 루프를 이용한 CMOS RF 전력 검출기)

  • Lee, Dongyeol;Kim, Jongsun
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.11
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    • pp.101-106
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    • 2014
  • This paper presents a wide dynamic range radio-frequency (RF) root-mean-square (RMS) power detector using an automatic gain control (AGC) loop. The AGC loop consists of a variable gain amplifier (VGA), RMS conversion block and gain control block. The VGA exploits dB-linear gain characteristic of the cascade VGA. The proposed circuit utilizes full-wave squaring and generates a DC voltage proportional to the RMS of an input RF signal. The proposed RMS power detector operates from 500MHz to 5GHz. The detecting input signal range is from 0 dBm to -70 dBm or more with a conversion gain of -4.53 mV/dBm. The proposed RMS power detector is designed in a 65-nm 1.2-V CMOS process, and dissipates a power of 5 mW. The total active area is $0.0097mm^2$.