• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.165-168
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• 2002

As the demand for higher data-rate chip-to-chip communication such as memory-to-controller, processor-to-processor increases, low cost high-speed serial links\ulcorner become more attractive. This paper describes a 0.25-fm CMOS 1.6Gbps/pin 4-level transceiver using Stub Series Terminated Logic for high Bandwidth. For multi-gigabit/second application, the data rate is limited by Inter-Symbol Interference (ISI) caused by channel low pass effects, process-limited on-chip clock frequency, and serial link distance. The proposed transceiver uses multi-level signaling (4-level Pulse Amplitude Modulation) using push-pull type, double data rate and flash sampling. To reduce Process-Voltage-Temperature Variation and ISI including data dependency skew, the proposed high-speed calibration circuits with voltage swing controller, data linearity controller and slew rate controller maintains desirable output waveform and makes less sensitive output. In order to detect successfully the transmitted 1.6Gbps/pin 4-level data, the receiver is designed as simultaneous type with a kick - back noise-isolated reference voltage line structure and a 3-stage Gate-Isolated sense amplifier. The transceiver, which was fabricated using a 0.25 fm CMOS process, performs data rate of 1.6 ~ 2.0 Gbps/pin with a 400MHB internal clock, Stub Series Terminated Logic ever in 2.25 ~ 2.75V supply voltage. and occupied 500 * 6001m of area.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.2
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• pp.1-8
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• 2004

This paper describes the design of monolithic optical transceiver circuitry being used as a part of the fiber optic modules. It has been designed in 0.6 ${\mu}{\textrm}{m}$ 2-poly 3 metal silicon CMOS analog technology and operates at 155.52 Mbps(STM-1) data rates. It drives laser diode to transmit intensity modulated optical signal according to 155.52 Mbps electrical data from system. Also, it receives 155.52 Mbps optical data that transmitted from other systems and converts it to electrical data using photo diode and amplifier. To avoid noise and interference between transmitter and receiver on one chip, layout techniques such as special placement, power supply separation, guard ring, and protection wall were used in the design. The die area is 4 ${\times}$ 4 $\textrm{mm}^2$ and the estimated power dissipation is less than 900 ㎽ with a single 5 V supply.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.4
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• pp.25-31
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• 2017

This paper presents a 270/540/750/1500-Mb/s serial-data transmitter realized in a $0.13-{\mu}m$ CMOS technology for the applications of video data transmission. A low-cost RG-58 copper cable(5C-HFBT-RG6T) is exploited as a transmission medium connected to a single BNC connector, which shows cable loss 45 dB in maximum at 1.5 GHz. RLGC modeling provides an equivalent circuit for SPICE simulations of which characteristics are very similar to the measured cable loss. The loss can be compensated by pre-emphasis at transmitter and equalization at receiver if needed. Measurements of the proposed transmitter chip demonstrate the operations of 270-Mb/s, 540-Mb/s, 750-Mb/s and 1.5-Gb/s, and provide the output voltage levels of $370mV_{pp}$ at 1.5 Gb/s even with the pre-emphasis turned-off. The total power consumption is 104 mW from 1.2/3.3-V supplies and the chip occupies the area of $1.65{\times}0.9mm^2$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.1
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• pp.91-99
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• 2018

This paper has proposed a low-noise and high-linear RF receiver supporting TV white space from 470 MHz to 698 MHz), which is implemented in $0.13-{\mu}m$ CMOS technology. It consists of a low-noise amplifier, a RF band-pass filter, a RF amplifier, a passive down-conversion mixer, and a channel-selection low-pass filter. A low-noise amplifier and RF amplifier provide a high voltage gain to improve the sensitivity level. To suppress strong and nearby interferers, two RF filtering schemes have been performed by using a RF BPF and a down-conversion mixer. The proposed LPF has been based on the common-gate topology and adopted a bi-quad cell to achieve -24dB/oct characteristics. In addition, the RF receiver can support the overall TV band by controlling a LO frequency. The simulated results show a voltage gain of 56 dB, a noise figure of less than 2 dB, and an out-of-channel IIP3 of -2.3 dBm. It consumes 37 mA from a 1.5 V supply voltage.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1192-1195
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• 2002

In this paper, we propose Low-Power Receiver circuits for a wireless communication system using ASK signal. Their structures are suitable for low supply current. The proposed circuits are designed and simulated by Spectre using 0.8m CMOS process parameters, and operate with supply current below 1.5${\mu}\textrm{A}$.

• Journal of Electrical Engineering and Technology
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• v.13 no.2
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• pp.875-880
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• 2018

This paper proposes a novel combined compensation structure in the infrared receiver chip. For the infrared communication chip, the current-voltage (I-V) convert circuit is crucial and important. The circuit is composed by the transimpedance amplifier (TIA) and the combined compensation structures. The TIA converts the incited photons into photocurrent. In order to amplify the photocurrent and avoid the saturation, the TIA uses the combined compensation circuit. This novel compensation structure has the low frequency compensation and high frequency compensation circuit. The low frequency compensation circuit rejects the low frequency photocurrent in the ambient light preventing the saturation. The high frequency compensation circuit raises the high frequency input impedance preserving the sensitivity to the signal of interest. This circuit was implemented in a $0.6{\mu}m$ BiCMOS process. Simulation of the proposed circuit is carried out in the Cadence software, with the 3V power supply, it achieves a low frequency photocurrent rejection and the gain keeps 109dB ranging from 10nA to $300{\mu}A$. The test result fits the simulation and all the results exploit the validity of the circuit.

• Journal of the Optical Society of Korea
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• v.17 no.1
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• pp.44-49
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• 2013

A transimpedance amplifier (TIA)-optical receiver (Rx) using two intersecting active feedback system with regulated-cascode (RGC) input stage has been designed and implemented for optical interconnects. The optical TIA-Rx chip is designed in a 0.13 ${\mu}m$ CMOS technology and works up to 10 Gbps data rate. The TIA-Rx chip core occupies an area of 0.051 $mm^2$ with power consumption of 16.9 mW at 1.3 V. The measured input-referred noise of optical TIA-Rx is 20 pA/${\surd}$Hz with a 3-dB bandwidth of 6.9 GHz. The proposed TIA-Rx achieved a high gain-bandwidth product per DC power figure of merit of 408 $GHz{\Omega}/mW$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.9
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• pp.7-13
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• 2009

This paper presents a multi-channel transceiver that achieves a data rate of 3.125Gb/s/ch. The LVDS is used because of its noise immunity and low power consumption. And a pre-emphasis circuit is also proposed to increase the transmitter speed. On the receiver side, a low-power CDR(clock and data recovery) using 1/4-rate clock based on dual-interpolator is proposed. The CDR generates needed additional clocks in each recovery part internally using only inverters. Therefore each part can be supplied with the same number of 1/4-rate clocks from a clock generator as in 1/2-rate clock method. Thus, the reduction of a clock frequency relaxes the speed limitation and lowers power dissipation. The prototype chip is comprised of two channels and was fabricated in a $0.18{\mu}m$ standard CMOS process. The output jitter of transmitter is loops, peak-to-peak(0.31UI) and the measured recovered clock jitter is 47.33ps, peak-to-peak which is equivalent to 3.7% of a clock period. The area of the chip is $3.5mm^2$ and the power consumption is about 119mW/ch.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.433-448
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• 2012

A source-synchronous receiver based on a delay-locked loop is presented. It employs a shared global calibration control between channels, yet achieves channel expandability for high aggregate I/O bandwidth. The global calibration control accomplishes skew calibration, equalizer adaptation, and phase lock of all the channels in a calibration period, resulting in the reduced hardware overhead and area of each data lane. In addition, the weight-adjusted dual-interpolating delay cell, which is used in the multiphase DLL, guarantees sufficient phase linearity without using dummy delay cells, while offering a high-frequency operation. The proposed receiver is designed in the 90-nm CMOS technology, and achieves error-free eye openings of more than 0.5 UI across 9-28 inch Nelco4000-6 microstrips at 4-7 Gb/s and more than 0.42 UI at data rates of up to 9 Gb/s. The data lane occupies only $0.152mm^2$ and consumes 69.8 mW, while the rest of the receiver occupies $0.297mm^2$ and consumes 56.0 mW at the 7- Gb/s data-rate and supply voltage of 1.35 V.

• ETRI Journal
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• v.26 no.3
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• pp.229-240
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• 2004

This paper reports on our development of a dual-mode transceiver for a CMOS high-rate Bluetooth system-onchip solution. The transceiver includes most of the radio building blocks such as an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, a variable gain amplifier (VGA), a dc offset cancellation circuit, a quadrature local oscillator (LO) generator, and an RF front-end. It is designed for both the normal-rate Bluetooth with an instantaneous bit rate of 1 Mb/s and the high-rate Bluetooth of up to 12 Mb/s. The receiver employs a dualconversion combined with a baseband dual-path architecture for resolving many problems such as flicker noise, dc offset, and power consumption of the dual-mode system. The transceiver requires none of the external image-rejection and intermediate frequency (IF) channel filters by using an LO of 1.6 GHz and the fifth order onchip filters. The chip is fabricated on a $6.5-mm^{2}$ die using a standard $0.25-{\mu}m$ CMOS technology. Experimental results show an in-band image-rejection ratio of 40 dB, an IIP3 of -5 dBm, and a sensitivity of -77 dBm for the Bluetooth mode when the losses from the external components are compensated. It consumes 42 mA in receive ${\pi}/4-diffrential$ quadrature phase-shift keying $({\pi}/4-DQPSK)$ mode of 8 Mb/s, 35 mA in receive GFSK mode of 1 Mb/s, and 32 mA in transmit mode from a 2.5-V supply. These results indicate that the architecture and circuits are adaptable to the implementation of a low-cost, multi-mode, high-speed wireless personal area network.