• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.455-459
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• 2004

Electrostatic discharge(ESD) is a serious reliability concern. It causes approximately most of all field failures of integrated circuits. Inevitably, future IC technologies will shrink the dimensions of interconnects, gate oxides, and junction depths, causing ICs to be increasingly susceptible to ESD-induced damage [1][2][3]. This thesis shows the optimization of the ESD protection circuit based on the tested results of MM (Machine Model) and HBM (Human Body Model), regardless of existing Reference in fully silicided 0.18 um CMOS process. His thesis found that, by the formation of silicide in a source and drain contact, the dimensions around the contact had a less influence on the ESD robustness and the channel width had a large influence on the ESD robustness [8].

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.115-122
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• 1996

A 300MHz PLL including FVC (frequency to voltage converter) is designed and fabricated in 0.8$\mu$m CMOS process. In this design, a FVC and a 2nd - order passive filter are added to the conventional charge-pump PLL to improve the acquisition time. The dual-rijng VCO(voltage controlled oscillator) realized in this paper has a frequency range form 208 to 320MHz. Integrated circuits have been fully tested and analyzed in detail and it is proved that pull-in speed is enhanced with the use fo FVC. In VCO range from 230MHz to 310MHz, experimental results show that realized PLL exhibits 4 times faster pull-in speed than that of conventional PLL.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.6
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• pp.637-646
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• 1988

The CMOS physical parameters are extracted using by processing models in fabrication steps, processing parameters, fabrication disturbances, control parameters. Statistical CMOS process and device simulator is proposed to evaluate the effect of inherent fluctuations in IC fabrication. Using this simulator, we perform worst case analysis in terms of statistically independent disturbances and compare this proposed method to Monte Carlo method, previous Worst Case method. And simulation results with this proposed method are more accurate than the past worst case analysis. This package is written in C language and runs on a IBM PC AT(OPUS).

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.341-344
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• 2017

Infrared (IR) filters were developed to implement integrated three-dimensional (3D) image sensors that are capable of obtaining both color image and depth information at the same time. The combination of light filters applicable to the 3D image sensor is composed of a modified IR cut filter mounted on the objective lens module and on-chip filters such as IR pass filters and color filters. The IR cut filters were fabricated by inorganic $SiO_2/TiO_2$ multilayered thin-film deposition using RF magnetron sputtering. On-chip IR pass filters were synthetized by dissolving various pigments and dyes in organic solvents and by subsequent patterning with photolithography. The fabrication process of the filters is fairly compatible with the complementary metal oxide semiconductor (CMOS) process. Thus, the IR cut filter and IR pass filter combined with conventional color filters are considered successfully applicable to 3D image sensors.

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.21-24
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• 2018

A temperature sensor with a binary output was implemented using switched-capacitor circuits in a $0.35-{\mu}m$ CMOS(com-plementary metal-oxide semiconductor) process. The measured temperature exhibited good agreement with the oven temperature after calibration. The measured power consumption was 5.61 mW, slightly lower than the simulated power consumption of 6.63 mW.

• Journal of Sensor Science and Technology
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• v.33 no.3
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• pp.147-151
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• 2024

The importance of Wireless Sensor Networks is becoming more evident owing to their practical applications in various areas. However, the energy problem remains a critical barrier to the progress of WSNs. By reducing the energy consumed by the sensor nodes that constitute WSNs, the performance and lifespan of WSNs will be enhanced. In this study, we introduce an energy-efficient ternary modulator that employs multi-threshold CMOS for logic conversion. We optimized the design with a low-power ternary gate structure based on a pass transistor using the MTCMOS process. Our design uses 71.69% fewer transistors compared to the previous design. To demonstrate the improvements in our design, we conducted the HSPICE simulation using a CMOS 180 nm process with a 1.8V supply voltage. The simulation results show that the proposed ternary modulator is more energy-efficient than the previous modulator. Power-delay product, a benchmark for energy efficiency, is reduced by 97.19%. Furthermore, corner simulations demonstrate that our modulator is stable against PVT variations.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.1 s.343
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• pp.65-70
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• 2006

An image sensor has limited dynamic range while the human eye has logarithmic response over wide range of light intensity. Although the sensor gain can be set high to identify details in darker area on the image, this results in saturation in brighter area. The gamma correction is essential to fit the human eye response. However, the digital gamma correction degrades image quality especially for darker area on the image due to the limited ADC resolution and the dynamic range. This Paper proposes a CMOS image sensor (CIS) with a nonlinear analog-to-digital converter (AU) which performs analog gamma correction. The CIS with the proposed nonlinear analog-to-digital conversion scheme was fabricated with a $0.35{\mu}m$ CMOS process. The analog gamma correction using the proposed nonlinear ADC CIS provides the 2.2dB peak-signal-to-noise-ratio(PSM) improved image qualify than conventional digital gamma correction. The PSNR of the image obtain from the digital gamma correction is 25.6dB while it is 27.8dB for analog gamma correction. The PSNR improvement over digital gamma correction is about $28.8\%$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.673-684
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• 2003

A degenerated differential pair has been widely used as a standard topology for digitally programmable CMOS VGAs. A variable degeneration resistor has been implemented using a resistor string or R-2R ladder with MOSFET switches. However, in the VGAs using these conventional methods, low-voltage and high-speed operation is very hard to achieve due to the dc voltage drop over the degeneration resistor. To overcome this problem a new variable degeneration resistor is proposed where the dc voltage drop is almost removed. Using the proposed gain control scheme, a low-voltage and high-speed CMOS VGA is designed. HSPICE simulation results using a 0.25${\mu}{\textrm}{m}$ CMOS process parameters show that the designed VGA provides a 3dB bandwidth of 360MHz and a 80dB gain control range in 2dB step. Gain errors are less than 0.4dB at 200MHz and less than l.4dB at 300MHz. The designed circuit consumes 10.8mA from a 2.5V supply and its die area is 1190${\mu}{\textrm}{m}$${\times}$360${\mu}{\textrm}{m}$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.2
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• pp.104-110
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• 2019

In this paper, a complementary metal oxide semiconductor(CMOS) power amplifier(PA) integrated circuit operating in the 900 MHz band for long-term evolution(LTE) communication systems is presented. The output matching network based on a transformer was implemented on a printed circuit board for low loss. Simultaneously, to achieve high efficiency of the PA, the second harmonic impedances are controlled. The CMOS PA was fabricated using a $0.18{\mu}m$ CMOS process and measured using an LTE uplink signal with a bandwidth of 10 MHz and peak to average power ratio of 7.2 dB for verification. The implemented CMOS PA module exhibits a power gain of 24.4 dB, power-added efficiency of 34.2%, and an adjacent channel leakage ratio of -30.1 dBc at an average output power level of 24.3 dBm.

• Transactions on Electrical and Electronic Materials
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• v.8 no.5
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• pp.196-200
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• 2007

In this paper, we propose and discuss the design using a simple method that reduces the fixed pattern noise(FPN) generated on the amorphous Si($\alpha-Si$) bolometer. This method is applicable to an IR image sensor. This method can also minimize the size of the reference resistor in the readout integrated circuit(ROIC) which processes the signal of an IR image sensor. By connecting four bolometer cells in parallel and averaging the resistances of the bolometer cells, the fixed pattern noise generated in the bolometer cell due to process variations is remarkably reduced. Moreover an $\alpha-Si$ bolometer cell, which is made by a MEMS process, has a large resistance value to guarantee an accurate resistance value. This makes the reference resistor be large. In the proposed cell structure, because the bolometer cells connected in parallel have a quarter of the original bolometer's resistance, a reference resistor, which is made by poly-Si in a CMOS process chip, is implemented to be the size of a quarter. We designed a ROIC with the proposed cell structure and implemented the circuit using a 0.35 um CMOS process.