• Proceedings of the IEEK Conference
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• summer
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• pp.221-224
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• 2004

This paper proposed an ultra low-power CMOS exponential voltage-mode circuit using the Pseudo-exponential function for realizing the exponential characteristics. The proposed circuit provides high dB-linear output voltage range at low-voltage applications. In a $0.25\;\mu m$ CMOS process, the simulations show more than 35 dB output voltage range and 26 dB with the linearity error less than $\pm0.5\;dB.$ The average current consumption is less than 80 uA. The proposed circuit can be used for the design of an extremely low-power variable gain amplifier (VGA) and automatic gain control (AGC).

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.176-186
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• 1996

As the density of VLSI increases, the conventional logic testing is not sufficient to completely detect the new faults generated in design and fabrication processing. Recently, IDDQ testing becomes very attractive since it can overcome the limitations of logic testing. In this paper, G-ATPG (gyeongsang automatic test pattern genrator) is designed which is able to be adapted to IDDQ testing for combinational CMOS VLSI. In G-ATPG, stuck-at, transistor stuck-on, GOS (gate oxide short)or bridging faults which can occur within priitive gate or XOR is modelled to primitive fault patterns and the concept of a fault-sensitizing gate is used to simulate only gates that need to sensitize the faulty gate because IDDQ test does not require the process of fault propagation. Primitive fault patterns are graded to reduce CPU time for the gates in a circuit whenever a test pattern is generated. the simulation results in bench mark circuits show that CPU time and fault coverage are enhanced more than the conventional ATPG using IDDQ test.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.621-622
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• 2006

This paper presents the design of LVDS(Low-Voltage-Differential-Signaling) driver circuit for Gb/s-per-pin operation using BiCMOS process technology. To reduce chip area, LVDS driver's switching devices were replaced with lateral bipolar devices. The designed lateral bipolar transister's common emitter current gain($\beta$) is 20 and device's emitter size is 2*10um. Also the proposed LVDS driver is operated at 2.5V and the maximum data rate is 2.8Gb/s approximately.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.605-606
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• 2006

Voltage Controlled Oscillator(VCO) plays an important role in today's communication systems. Especially, a Clock Generator(CG) in phase-locked loop(PLL) is usually realized by the VCO. This paper proposes a new VCO with a controllable duty cycle buffer, that can be adopted in low-power high-speed communication systems. Delay cell of the VCO is implemented with gilbert cell. Frequency dynamic range of the VCO is in the range of approximately $50MHz{\sim}500MHz$. Parameters with N-well CMOS 0.18-um process with 1.8V supply voltage was used for the simulations.

• Proceedings of the KIEE Conference
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• 2007.10a
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• pp.187-188
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• 2007

This paper describes a simple and high-performance LDO regulator designed using a $0.18{\mu}m$ CMOS process. It is designed to provide a regulated voltage for on-chip small loads instead of for off-chip heavy loads. Since the load capacitance is very small in this applications, the frequency compensation can be easily achieved without a buffer. The designed LDO drives a load current up to 15mA and dissipates only 12uA quiescent current. The line regulation is and the load regulation is for a 9mA load step. The PSRR at 10kHz is 54dB.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.16-17
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• 2006

적외선 이미지 센서용으로 사용되는 마이크로 볼로미터 센서는 process variation으의 인하여 모든 볼로미터 센서의 셀이 정확한 저항값을 갖지 못하여 입력신호에 왜곡을 가져 온다. 본 논문에서는 적외선 이미지 센서용 CMOS 검출회로를 설계하는 데 있어, 이러한 볼로미터 셀 어레이의 고정패턴잡음(Fixed Pattern hoise)을 최소화하는 방법에 대해 연구하였다. 기존의 단일 입력 방식 검출회로는 볼로미터 셀어레이의 고정패턴잡음을 보정하기 위하여 추가적인 보정 회로를 필요로 하였다. 이러한 문제점을 해결하기 위해서 본 논문에서는 차동 입력 방식 검출회로를 제안하였으며, 이를 적용하여 출력을 살펴본 결과 추가적인 보정회로 없이 20%의 노이즈 감쇠효과를 얻을 수 있다. 연구 결과를 바탕으로 32${\times}$32 크기를 갖는 셀어레이의 볼로미터를 구성하여 전체 칩을 설계하였으며 컴퓨터 시물레이션을 통해 결과를 분석하였다.

• ETRI Journal
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• v.29 no.5
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• pp.670-672
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• 2007

An ultra-wideband low-noise amplifier is proposed with operation up to 8.2 GHz. The amplifier is fabricated with a 0.18-${\mu}m$ CMOS process and adopts a two-stage cascode architecture and a simplified Chebyshev filter for high gain, wide band, input-impedance matching, and low noise. The gain of 19.2 dB and minimum noise figure of 3.3 dB are measured over 3.4 to 8.2 GHz while consuming 17.3 mW of power. The Proposed UWB LNA achieves a measured power-gain bandwidth product of 399.4 GHz.

• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.949-952
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• 2000

A low power 10bit current-mode folding and interpolating CMOS analog to digital converter (ADC) with arithmetic folding blocks is presented in this paper. A current-mode two-level folding amplifier with a high folding rate (FR) is designed not only to prevent ADC from increasing a FR excessively, but also to perform a high resolution at a single power supply of 3.3V The proposed ADC is implemented by a 0.6${\mu}$m n-well CMOS single poly/double metal process. The simulation result shows a differential nonlinearity (DNL) of ${\pm}$0.5LSB, an integral nonlinearity (INL) of ${\pm}$1.0LSB

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.6
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• pp.51-57
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• 1997

Low-voltage, low-power gm-C filter utilizing newly dveloped operational transconductance amplifier (OTA) is described in this paper. The OTA has only two MOS transistors in saturation region between $V_{DD}$ and GND, and thus low voltage operation is possible. To improve the linearity, the OTA is made differential. Common mode feedback, essential in differential circuit, requires no additional implemented in $0.8\mu\textrm{m}$ CMOS process, and the center frequency can be controlled from 15MHz with 3.0V single power supply.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.1
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• pp.59-64
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• 2011

A low noise and low power RF front-end for 5.8 GHz DSRC (Dedicated Short Range Communication) receiver is presented. The RF front-end is composed of a single-to-differential two-stage LNA and a Gilbert down-conversion mixer. In order to remove an external balun and 5.8 GHz LC load tuning circuit, a single-to-differential LNA with capacitive cross coupled pair is proposed. The RF front-end is fabricated in a 0.13 ${\mu}m$ CMOS process and draws 7.3 mA from a 1.2 V supply voltage. It shows a voltage gain of 40 dB and a noise figure (NF) lower than 4.5 dB over the entire DSRC band.