• Proceedings of the KIEE Conference
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• 2007.10a
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• pp.191-192
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• 2007

This paper presents a 900MHz fractional-N frequency synthesizer for radio frequency identification (RFID) reader using $0.18{\mu}m$ standard CMOS process. The IC meets the EPC Class-1 Generation-2 and ISO-18000 Type-C standards. To minimize VCO pulling, the 900MHz VCO is generated by a 1.8GHz VCO followed by a frequency divider. The settling time of the synthesizer is less than $20{\mu}m$. The frequency synthesizer achieves the phase noise of -105.6dBc/Hz at 200kHz offset. The frequency synthesizer occupies an area of $1.8{\times}0.99mm^2$, and dissipates 8mA from a low supply voltage of 1.8V.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1088-1091
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• 2009

A boost converter with charge-recycling technique fabricated by $0.25{\mu}m$ CMOS BCD process can provide different supply voltages to drive series RGB LEDs in sequence for reducing the power consumption on the constant current generator. The proposed technique stores and restores extra energy to improve the efficiency, as well as enhances the reference tracking response. Experimental results show that the period of reference-tracking response can be improved. When the load current is 100mA, the periods of reference down-tracking and uptracking are smaller than $10{\mu}s$ and $20{\mu}s$, respectively. Experimental results demonstrate fast and efficient reference tracking performance is achieved.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.4
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• pp.176-181
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• 2001

As the data rate between chip-to-chip gets high, the skin effect and load of pins deteriorate noise margin. With these, noise disturbances on the bus channel make it difficult for receiver circuits to read the data signal. This paper has proposed a new pre-emphasis driver circuit which achieves wide noise margin by enlarging the signal voltage range during data transition. When data is transferred from a memory chip to a controller, the output boltage of the driver circuit reaches the final values through the intermediate voltage level. The proposed driver supplies more currents applicable to a packet-based memory system, because it needs no additional control signal and realizes very small area. The circuit has been designed in a 0.18 ${\mu}m$ CMOS process, and HSPICE simulation results have shown that the data rate of 1.32 Gbps be achieved. Due to its result, the proposed driver can achieved higher speed than conventional driver by 10%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.243-246
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• 1998

This paper presents a 6-bit self-calibrated D/A converter designed with current cell matrix structure. This structure is based on the current-cell matrix configuration using a regulated gate cascode current cell with 3-way switch. using from CMOS process and 5V power supply, the simulated conversion rate is 45.78MHz and the average mismatching properties among current sources are reduced to 0.02% and 0.005%, respectively when 1% and 0.5% errors of current sources are considered.

• Proceedings of the KIEE Conference
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• 1998.11b
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• pp.582-584
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• 1998

IEEE1394 is an international standard that will integrate entertainment, communication, and computing electronics into consumer multimedia. IEEE1394 is a hardware and software for transporting data at 100,200, or 400Mbps. There are efforts to create speed improvements to 800 and muti-Gigabit speed s. An 980Mhz frequency synthesizer is proposed for high speed transport and designed by a 0.35um CMOS process.

• ETRI Journal
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• v.30 no.4
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• pp.612-614
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• 2008

A novel linear switched termination active cross-coupled low-voltage differential signaling (LVDS) transceiver operating at 1.5 GHz clock frequency is presented. On the transmitter side, an active cross-coupled linear output driver and a switched termination scheme are applied to achieve high speed with low current. On the receiver side, a shared pre-amplifier scheme is employed to reduce power consumption. The proposed LVDS transceiver implemented in an 80 nm CMOS process is successfully demonstrated to provide a data rate of 6 Gbps/pin, an output data window of 147 ps peak-to-peak, and a data swing of 196 mV. The power consumption is measured to be 4.2 mW/pin at 1.2 V.

• ETRI Journal
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• v.30 no.4
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• pp.535-545
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• 2008

This paper introduces a systematic top-down and bottom-up design methodology to assist the designer in the implementation of continuous-time (CT) cascade sigma-delta (${\Sigma}{\Delta}$) modulators. The salient features of this methodology are (a) flexible behavioral modeling for optimum accuracy-efficiency trade-offs at different stages of the top-down synthesis process, (b) direct synthesis in the continuous-time domain for minimum circuit complexity and sensitivity, (c) mixed knowledge-based and optimization-based architectural exploration and specification transmission for enhanced circuit performance, and (d) use of Pareto-optimal fronts of building blocks to reduce re-design iterations. The applicability of this methodology will be illustrated via the design of a 12-bit 20 MHz CT ${\Sigma}{\Delta}$ modulator in a 1.2 V 130 nm CMOS technology.

• ETRI Journal
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• v.42 no.5
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• pp.790-798
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• 2020

Herein, a low-ripple coarse-fine digital low-dropout regulator (D-LDO) without ringing in the transient state is proposed. Conventional D-LDO suffers from a ringing problem when settling the output voltage at a large load transition, which increases the settling time. The proposed D-LDO removes the ringing and reduces the settling time using an auxiliary power stage which adjusts its output current to a load current in the transient state. It also achieves a low output ripple voltage using a comparator with a complete comparison signal. The proposed D-LDO was fabricated using a 65-nm CMOS process with an area of 0.0056 μ㎡. The undershoot and overshoot were 47 mV and 23 mV, respectively, when the load current was changed from 10 mA to 100 mA within an edge time of 20 ns. The settling time decreased from 2.1 ㎲ to 130 ns and the ripple voltage was 3 mV with a quiescent current of 75 ㎂.

• ETRI Journal
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• v.31 no.2
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• pp.234-236
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• 2009

We present a novel operational amplifier preset technique for a switched-capacitor circuit to reduce the acquisition time by improving the slewing. The acquisition time of a variable gain amplifier (VGA) using the proposed technique is reduced by 30% compared with a conventional one; therefore, the power consumption of the VGA is decreased. For additional power reduction, a programmable capacitor array scheme is used in the VGA. In the 0.13 ${\mu}m$ CMOS process, the VGA, which consists of three-stages, occupies 0.33 $mm^2$ and dissipates 19.2 mW at 60 MHz with a supply voltage of 1.2 V. The gain range is 36.03 dB, which is controlled by a 10-bit control word with a gain error of ${\pm}0.68$ LSB.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.28B no.12
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• pp.27-37
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• 1991

In this paper, the novel PLD (Preceding Layer Driven) MLP (Multi Layer Perceptron) neural network model and its learning algorithm is described. This learning algorithm is different from the conventional. This integer weights and hard limit function are used for synaptic weight values and activation function, respectively. The entire learning process is performed by layer-by-layer method. the number of layers can be varied with difficulty of training data. Since the synaptic weight values are integers, the synapse circuit can be easily implemented with CMOS. PLD MLP neural network was applied to English Characters, arbitrary waveform generation and spiral problem.