• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.227-231
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• 2008

A latchup-free design based on the lateral diffused MOS (LDMOS) adopting the "Darlington" approaches was designed. The use of Darlington configuration as the trigger circuit results in the reduction of the size of the circuit when compared to the conventional inverter driven RC-triggered MOSFET ESD power clamp circuits. The proposed clamp was fabricated using a $0.35{\mu}m$ 60V BCD (Bipolar CMOS DMOS) process and the performance of the proposed clamp was successfully verified by TLP (Transmission Line Pulsing) measurements.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.718-727
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• 2014

In a wireless communications system, a predistorter is often used to compensate for the nonlinear distortions that result from operating a power amplifier near the saturation region, thereby improving system performance and increasing the spectral efficiency for the communication channels. This paper presents a new VLSI design for the polynomial digital predistorter (DPD). The proposed DPD uses a Coordinate Rotation Digital Computing (CORDIC) processor and a PD process with a fully-pipelined architecture. Due to its simple and regular structure, it can be a competitive design when compared to existing polynomial-type and approximated DPDs. Implementing a fifth-order distorter with the proposed design requires only 43,000 logic gates in a $0.35{\mu}m$ CMOS standard cell library.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.457-462
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• 2014

This letter proposes a low-jitter DLL-based clock generator with two negative feedback loops. The main negative feedback loops suppress the jitter of DLL. The additional negative feedback loops suppress the delay-time variance of each delay stages. Both two negative feedback loops in a DLL results in suppressing the jitter of clock signal further. Measurement results of the DLL-based clock generator with two negative feedback loops fabricated in a one-poly six-metal $0.18{\mu}m$ CMOS process show 5.127-ps rms jitter and 47.6-ps peak-to-peak jitter at 1 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.407-418
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• 2014

As the high-throughput requirement in the next generation communication system increases, it becomes essential to implement high-throughput SISO (Soft-Input Soft-Output) decoder with minimal hardware resources. In this paper, we present the comparison results between cascaded radix-4 ACS (Add-Compare-Select) and LUT (Look-Up Table)-based radix-4 ACS in terms of delay, area, and power consumption. The hardware overhead incurred from the retiming technique used for high speed radix-4 ACS operation is also analyzed. According to the various analysis results, high-throughput radix-4 SISO decoding architecture based on simple path metric recovery circuit is proposed to minimize the hardware resources. The proposed architecture is implemented in 65 nm CMOS process and memory requirement and power consumption can be reduced up to 78% and 32%, respectively, while achieving high-throughput requirement.

• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.376-381
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• 2014

We present a CMOS rail-to-rail class-AB amplifier using dynamic current biasing to improve the delay response of the error amplifier in a low-dropout (LDO) regulator, which is a building block for a wireless power transfer receiver. The response time of conventional error amplifiers deteriorates by slewing due to parasitic capacitance generated at the pass transistor of the LDO regulator. To enhance slewing, an error amplifier with dynamic current biasing was devised. The LDO regulator with the proposed error amplifier was fabricated in a $0.35-{\mu}m$ high-voltage BCDMOS process. We obtained an output voltage of 4 V with a range of input voltages between 4.7 V and 7 V and an output current of up to 212 mA. The settling time during line transient was measured as $9{\mu}s$ for an input variation of 4.7-6 V. In addition, an output capacitor of 100 pF was realized on chip integration.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.18-20
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• 1997

The fabrication process of silicon-diamond(SOD) structure wafer were studied. Microwave plasma chemical vapor deposition (MWPCVD) and annealing technology were used to synthesize diamond film with high resistivity and thermal conductivity. Bonding and etchback silicon-on-diamond (BESOD) were utilized to form supporting substrate and single silicon thin layer of SOD wafer. At last, a SOD structure wafer with 0.3~1$\mu\textrm{m}$ silicon film and 2$\mu\textrm{m}$ diamond film was prepared. The characteristics of radiation for a CMOS integrated circuit (IC) fabricated by SOD wafer were studied.

• Journal of the Korea Institute of Military Science and Technology
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• v.10 no.2
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• pp.152-159
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• 2007

This paper describes the design, fabrication, and measurement of ROIC(ReadOut Integrated Circuit) for $320{\times}256$ IRFPA(InfraRed Focal Plane Array). A ROIC plays an important role that transfer photocurrent generated in a detector device to thermal image system. Recently, the high performance and low power ROIC adding various functions is being required. According to this requirement, the design of ROIC focuses on 7MHz or more pixel rate, low power dissipation, anti-blooming, multi-channel output mode, image reversal, various windowing, and frame CDS(Correlated Double Sampling). The designed ROIC was fabricated using $0.6{\mu}m$ double-poly triple-metal Si CMOS process. ROIC function factors work normally, and the power dissipation of ROIC is 33mW and 90.5mW at 7.5MHz pixel rate in the 1-channel and 4-channel operation, respectively.

• Journal of information and communication convergence engineering
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• v.9 no.1
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• pp.11-15
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• 2011

A Differential line inductor is proposed for a differential power amplifier. The proposed differential line inductor is composed of two conventional line inductors rearranged to make the current direction of the two line inductors identical. The proposed line inductor is simulated with a 2.5-D and a 3-D EM simulator to verify its feasibility with the substrate information in a 0.18-${\mu}m$ RF CMOS process. The inductances of various line inductors implemented with printed circuit boards were measured. The feasibility of the proposed line inductor was successfully demonstrated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.13-17
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• 2013

In this paper, we designed a charge pump circuit using level shifter for LED driver IC. The designed circuit makes the 15 V output voltage from the 5 V input in condition of 50 kHz switching frequency. The prototype chip which include the proposed charge pump circuit and its several internal sub-blocks such as oscillator, level shifter was fabricated using a 0.35 um 20 V BCD process technology. The size of the fabricated prototype chip is 2,350 um ${\times}$ 2,350 um. We examined performances of the fabricated chip and compared its measured results with SPICE simulation data.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.2
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• pp.465-470
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• 2010

The charge pump in a phase-locked loop is a key block in determining reference spurs of the VCO output signal. To reduce reference spurs, the current mismatch in the charge pump must be minimized. This paper presents a dual compensation method to reduce the current mismatch. The proposed charge pump and PLL were realized in a $0.18{\mu}m$ CMOS process. Measured current matching characteristics were achieved with less than 1.4% difference and with the current variation of 3.8% in the pump current over the charge pump output voltage range of 0.35-1.35V at 1.8V. The reference spur of the PLL based on the proposed charge pump was measured to be -71dBc.