• Journal of electromagnetic engineering and science
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• 제14권4호
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• pp.393-398
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• 2014

A highly efficient dual-mode linear CMOS stacked-FET power amplifier (PA) is implemented for 3G UMTS and 4G LTE handset applications. High efficiency is achieved at a backed-off output power ($P_{out}$) below 12 dBm by employing an active-bypass amplifier, which consumes very low quiescent current and has high load-impedance. The output paths between high- and low-power modes of the PA are effectively isolated by using a bypass switch, thus no RF performance degradation occurs at high-power mode operation. The fabricated 900 MHz CMOS PA using a silicon-on-insulator (SOI) CMOS process operates with an idle current of 5.5 mA and shows power-added efficiency (PAE) of 20.5%/43.5% at $P_{out}$ = 12.4 / 28.2 dBm while maintaining an adjacent channel leakage ratio (ACLR) better than -39 dBc, using the 3GPP uplink W-CDMA signal. The PA also exhibits PAE of 35.1% and $ACLR_{E-UTRA}$ of -33 dBc at $P_{out}$ = 26.5 dBm, using the 20 MHz bandwidth 16-QAM LTE signal.

• 한국정보통신학회논문지
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• 제17권1호
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• pp.158-165
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• 2013

본 논문에서는 3.1-10.6GHz 초광대역 CMOS 저잡음 증폭기의 새로운 구조를 소개하였다. 제안된 초광대역 저잡음 증폭기는 입력 임피던스 정합에 RC 피드백과LC 필터회로를 사용하여 설계되었다. 이 설계에 전류 재사용 구조는 전력소비를 줄이기 위해 채택되었으며, 인덕터 피킹 기법은 대역폭을 확장하기 위하여 적용되었다. 이 초광대역 저잡음 증폭기의 특성을 $0.18-{\mu}m$ CMOS 공정기술로 시뮬레이션을 수행한 결과는 3.1-10.6GHz 대역 내에서 전력이득은 14-14.9dB, 입력정합은 -10.8dB이하, 평탄도는 0.9dB, 잡음지수는 2.7-3.3dB인 것을 보여준다. 또한, 입력 IP3는 -5dBm이고, 소비전력은 12.5mW이다.

• Journal of electromagnetic engineering and science
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• 제8권3호
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• pp.91-95
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• 2008

This paper presents a direct-conversion I/Q up-mixer block, which supports $3{\sim}5$ GHz ultra-wideband(UWB) applications. It consists of a VI converter, a double-balanced mixer, a RF amplifier, and a differential-to-single signal converter. To achieve wideband characteristics over $3{\sim}5$ GHz frequency range, the double-balanced mixer adopts a shunt-peaking load. The proposed RF amplifier can suppress unwanted common-mode input signals with high linearity. The proposed direct-conversion I/Q up-mixer block is implemented using $0.18-{\mu}m$ CMOS technology. The measured results for three channels show a power gain of $-2{\sim}-9$ dB with a gain flatness of 1dB, a maximum output power level of $-7{\sim}-14.5$ dBm, and a output return loss of more than - 8.8 dB. The current consumption of the fabricated chip is 25.2 mA from a 1.8 V power supply.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 심포지엄 논문집 정보 및 제어부문
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• pp.193-194
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• 2007

This paper presents the design of a power amplifier for full-band UWB application systems using a CMOS 0..18um technology. A wideband RLC filter and a multilevel RLC matching scheme are utilized to achieve the wideband input/output matching. Both the cascade and cascode stage are used to increase the gain and to achieve gain flatness. Simulation results show that the designed amplifier provides a power gain greater than 10 dB throughout the UWB full-band(3.1-10.6GHz) and an input P1dB of -1.2dBm at 6.9GHz. It consumes 35.8mW from a 1.8V supply.

• 대한전자공학회논문지SD
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• 제45권4호
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• pp.131-136
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• 2008

[ $0.18-{\mu}m$ ] CMOS공정을 이용하여 근거리 무선통신(22-29 GHz)에서 응용할 수 있는 전력증폭기를 설계하였다. 전도성 기판에 의한 손실을 줄이기 위해서 기판 차폐된 두 가지 형태의 전송선로를 설계하고, 40 GHz 까지 측정 및 모델링하였다. 기판 차폐 microstrip line (MSL) 전송선로의 경우 27 GHz에서 약 0.5 dB/mm의 삽입손실을 나타내었다. 기판 차폐 MSL 구조를 이용한 전력증폭기는 0.83$mm^2$의 비교적 작은 면적을 차지하면서도 27 GHz에서 14.7 dB의 소신호 이득과 14.5 dBm의 출력을 나타내었다. 기판 차폐 coplanar waveguide (CPW) 전송선로의 경우 27 GHz에서 약 1.0 dB/mm 삽입손실을 나타내었으며, 이를 이용한 전력증폭기는 26.5 GHz에서 12 dB의 소신호 이득과 12.5 dBm의 출력을 나타내었다. 본 논문의 결과는 $0.18-{\mu}m$ CMOS공정을 이용한 저가격의 근거리 무선통신 시스템을 구현할 수 있는 가능성을 제시한다.

• 대한전자공학회논문지SD
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• 제46권10호
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• pp.31-39
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• 2009

본 논문은 전력선 통신용(PLC) SoC ASIC으로 내장된 Analog Front-end(AFE)를 바탕으로 낮은 소비 전력과 저 가격을 달성할 수 있었으며, CMOS공정으로 구현된 AFE와, 1.8V동작의 Core Logic구동용 LDO, ADC, DAC와 IO pad를 구동하기 위한 LDO로 구성되어 있다. AFE는 Pre-amplifier, Programmable gain Amplifier와 10bit ADC의 수신 단으로 구성되며, 송신 단은 10bit differential DAC, Line Driver로 구성되어 있다. 본 ASIC은 0.18 um 1 Poly 5 Metal CMOS로 구현 되었으며, 동작전압은 3.3 V단일 전원만 사용하였고, 이때 소모 전력은 대기 시에 30mA이며, 동작 시 전력은 300mA으로 에코 디자인 요구를 만족하게 하였다. 본 칩의 Chip size는 $3.686\;{\times}\;2.633\;mm^2$ 이다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.526-529
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• 1998

This paper describes new sense amplifier with fast sensing delay time of 0.54ns and 32kb CMOS embedded SRAM with 4.67ns access time for a 3-V powr supply. It was achieved using the sense amplifier with multiple point sensing scheme and high speed bit-line scheme. The sense amplifier saves 25% of the power dissipation compared with the conventional one while maintaining a very short sensing delay. The SRAM uses 0.5.mu.m double-polysilicon and triplemetal CMOS process technology. A die size is 1.78mm*2.13mm.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.538-541
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• 1998

This paper describes the development of 5.15ns 32kb asynchronous CMOS SRAM using 0.6.mu.m CMOS technology. The proposed high speed embedded SRAM is realized with optimized control circuit and sense amplifier at a power supply of 3V. Using proposed control circuit, the delay time from address input to wordline 'on' is reduced by 33% and mismatch-insensitive sense amplifier can sense a small difference of bit-line voltage fast and stably.

• ETRI Journal
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• 제35권5호
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• pp.819-826
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• 2013

A class-D audio amplifier for a digital hearing aid is described. The class-D amplifier operates with a pulse-code modulated (PCM) digital input and consists of an interpolation filter, a digital sigma-delta modulator (SDM), and an analog SDM, along with an H-bridge power switch. The noise of the power switch is suppressed by feeding it back to the input of the analog SDM. The interpolation filter removes the unwanted image tones of the PCM input, improving the linearity and power efficiency. The class-D amplifier is implemented in a 0.13-${\mu}m$ CMOS process. The maximum output power delivered to the receiver (speaker) is 1.19 mW. The measured total harmonic distortion plus noise is 0.015%, and the dynamic range is 86.0 dB. The class-D amplifier consumes 304 ${\mu}W$ from a 1.2-V power supply.

• Journal of information and communication convergence engineering
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• 제6권2호
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• pp.154-157
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• 2008

A class-E RF(Radio Frequency) power amplifier for wireless application is designed using standard CMOS technology. To drive the class-E power amplifier, a class-F RF power amplifier is used and the reliability characteristics are studied with a class-E load network. The reliability characteristic is improved when a finite-DC feed inductor is used instead of an RF choke with the load. After one year of operating, when the load is an RF choke the output current and voltage of the power amplifier decrease about 17% compared to initial values. But when the load is a finite DC-feed inductor the output current and voltage decrease 9.7%. The S-parameter such as input reflection coefficient(S11) and the forward transmission scattering parameter(S21) is simulated with the stress time. In a finite DC-feed inductor the characteristics of S-parameter are changed slightly compared to an RF-choke inductor. From the simulation results, the class-E power amplifier with a finite DC-feed inductor shows superior reliability characteristics compared to power amplifier using an RF choke.