• Title/Summary/Keyword: CMOS 고속회로

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Design of Dual-Path Decimal Floating-Point Adder (이중 경로 십진 부동소수점 가산기 설계)

  • Lee, Chang-Ho;Kim, Ji-Won;Hwang, In-Guk;Choi, Sang-Bang
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.9
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    • pp.183-195
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    • 2012
  • We propose a variable-latency Decimal Floating Point(DFP) adder which adopts the dual data path scheme. It is to speed addition and subtraction of operand that has identical exponents. The proposed DFP adder makes use of L. K. Wang's operand alignment algorithm, but operates through high speed data-path in guaranteed accuracy range. Synthesis results show that the area of the proposed DFP adder is increased by 8.26% compared to the L. K. Wang's DFP adder, though critical path delay is reduced by 10.54%. It also operates at 13.65% reduced path than critical path in case of an operation which has two DFP operands with identical exponents. We prove that the proposed DFP adder shows higher efficiency than L. K. Wang's DFP adder when the ratio of identical exponents is larger than 2%.

Low Power Discrete-Time Incremental Delta Sigma ADC with Passive Integrator (수동형 적분기(Passive Integrator)를 이용한 저전력 이산시간 Incremental Delta Sigma ADC)

  • Oh, Goonseok;Kim, Jintae
    • Journal of the Institute of Electronics and Information Engineers
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    • v.54 no.1
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    • pp.26-32
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    • 2017
  • This paper presents a low power and high resolution incremental delta-sigma ADC that utilizes a passive integrator instead of an opamp-based active integrator. Opamp is a power-hungry block that involves tight design tradeoffs. To avoid the use of active integrator, the s-domain characteristic of an active integrator is first analyzed. Based on the analysis, an active integrator with low gain design is proposed as an alternative design method. To save power even more aggressively, a passive integrator with no static current is proposed. A 1st order single-bit incremental delta-sigma ADC using the proposed passive integrator is implemented in a 65nm CMOS process. Transistor-level simulation shows that the ADC consumes only 0.6uW under 1.2V supply while achieving SNDR of 71dB with 22kHz bandwidth. The estimated total power consumption including digital filter is 6.25uW, and resulting power efficiency is on a par with state-of-the-art A/D converters.

Pipelining of orthogonal Double-Rotation Digital Lattice Filters for High-Speed and Low-Power Implementation (고속 및 저파워 실현을 위한 직교 이중 회전 디지털 격자 필터의 파이프라인화)

  • 정진균;엄경배
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.19 no.12
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    • pp.2409-2417
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    • 1994
  • The ODR(orthogonal double-rotation) digital lattice filters have desirable properties for VLSI implementation such as local connection, regularity and pipelinability. These filters are also known to exhibit good numerical behavior for finite precision implementation. Although these filters can be pipelined by the cut-set localization procedure, it should be noted that the maximum sample rate obtained by this technique is limited by the feedback computations. In this paper, a pipelining method for the ODR digital lattice filter is proposed, by which the sample rate can be increased at any desired level. it is also shown that the low-power CMOS digital implementation of ODR digital lattice filters can be done successfully using our pipelining method. The pipelining method is based on the properties of the Schur algoithm, constrained filter design methods, and the polyphase decomposition technique.

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Efficient Interface circuits of Embedded Memory for RISC-based DSP Microprocessor (RICS-based DSP의 효율적인 임베디드 메모리 인터페이스)

  • Kim, You-Jin;Cho, Kyoung-Rok;Kim, Sung-Sik;Cheong, Eui-Seok
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.36C no.9
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    • pp.1-12
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    • 1999
  • In this paper, we designed an embedded processor with 128Kbytes EPROM and 4Kbytes SRAM based on GMS30C2132 which RISC processor with DSP functions. And a new architecture of bus sharing to control the embedded memory and external memory unit i proposed aiming at one-cycle access between memories and CPU. For embedded 128Kbytes EPROM, we designed the new expansion interface for data size at data ordering with memory organization and the efficient interface for test. The embedded SRAM supports an extended stack area high speed DSP operation, instruction cache and variable data-length control which is accessed with 4K modulo addressing schemes. The proposed new architecture and circuits reduced the memory access cycle time from 40ns and improved operation speed 2-times for program benchmark test. The chip is occupied $108.68mm^2$ using $0.6{\mu}m$ CMOS technology.

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A 1280-RGB $\times$ 800-Dot Driver based on 1:12 MUX for 16M-Color LTPS TFT-LCD Displays (16M-Color LTPS TFT-LCD 디스플레이 응용을 위한 1:12 MUX 기반의 1280-RGB $\times$ 800-Dot 드라이버)

  • Kim, Cha-Dong;Han, Jae-Yeol;Kim, Yong-Woo;Song, Nam-Jin;Ha, Min-Woo;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.1
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    • pp.98-106
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    • 2009
  • This work proposes a 1280-RGB $\times$ 800-Dot 70.78mW 0.l3um CMOS LCD driver IC (LDI) for high-performance 16M-color low temperature poly silicon (LTPS) thin film transistor liquid crystal display (TFT-LCD) systems such as ultra mobile PC (UMPC) and mobile applications simultaneously requiring high resolution, low power, and small size at high speed. The proposed LDI optimizes power consumption and chip area at high resolution based on a resistor-string based architecture. The single column driver employing a 1:12 MUX architecture drives 12 channels simultaneously to minimize chip area. The implemented class-AB amplifier achieves a rail-to-rail operation with high gain and low power while minimizing the effect of offset and output deviations for high definition. The supply- and temperature-insensitive current reference is implemented on chip with a small number of MOS transistors. A slew enhancement technique applicable to next-generation source drivers, not implemented on this prototype chip, is proposed to reduce power consumption further. The prototype LDI implemented in a 0.13um CMOS technology demonstrates a measured settling time of source driver amplifiers within 1.016us and 1.072us during high-to-low and low-to-high transitions, respectively. The output voltage of source drivers shows a maximum deviation of 11mV. The LDI with an active die area of $12,203um{\times}1500um$ consumes 70.78mW at 1.5V/5.5V.

A Non-Calibrated 2x Interleaved 10b 120MS/s Pipeline SAR ADC with Minimized Channel Offset Mismatch (보정기법 없이 채널 간 오프셋 부정합을 최소화한 2x Interleaved 10비트 120MS/s 파이프라인 SAR ADC)

  • Cho, Young-Sae;Shim, Hyun-Sun;Lee, Seung-Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.9
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    • pp.63-73
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    • 2015
  • This work proposes a 2-channel time-interleaved (T-I) 10b 120MS/s pipeline SAR ADC minimizing offset mismatch between channels without any calibration scheme. The proposed ADC employs a 2-channel SAR and T-I topology based on a 2-step pipeline ADC with 4b and 7b in the first and second stage for high conversion rate and low power consumption. Analog circuits such as comparator and residue amplifier are shared between channels to minimize power consumption, chip area, and offset mismatch which limits the ADC linearity in the conventional T-I architecture, without any calibration scheme. The TSPC D flip-flop with a short propagation delay and a small number of transistors is used in the SAR logic instead of the conventional static D flip-flop to achieve high-speed SAR operation as well as low power consumption and chip area. Three separate reference voltage drivers for 4b SAR, 7b SAR circuits and a single residue amplifier prevent undesirable disturbance among the reference voltages due to each different switching operation and minimize gain mismatch between channels. High-frequency clocks with a controllable duty cycle are generated on chip to eliminate the need of external complicated high-frequency clocks for SAR operation. The prototype ADC in a 45nm CMOS technology demonstrates a measured DNL and INL within 0.69LSB and 0.77LSB, with a maximum SNDR and SFDR of 50.9dB and 59.7dB at 120MS/s, respectively. The proposed ADC occupies an active die area of 0.36mm2 and consumes 8.8mW at a 1.1V supply voltage.

Dual-mode Pseudorandom Number Generator Extension for Embedded System (임베디드 시스템에 적합한 듀얼 모드 의사 난수 생성 확장 모듈의 설계)

  • Lee, Suk-Han;Hur, Won;Lee, Yong-Surk
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.8
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    • pp.95-101
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    • 2009
  • Random numbers are used in many sorts of applications. Some applications, like simple software simulation tests, communication protocol verifications, cryptography verification and so forth, need various levels of randomness with various process speeds. In this paper, we propose a fast pseudorandom generator module for embedded systems. The generator module is implemented in hardware which can run in two modes, one of which can generate random numbers with higher randomness but which requires six cycles, the other providing its result within one cycle but with less randomness. An ASIP (Application Specific Instruction set Processor) was designed to implement the proposed pseudorandom generator instruction sets. We designed a processor based on the MIPS architecture,, by using LISA, and have run statistical tests passing the sequence of the Diehard test suite. The HDL models of the processor were generated using CoWare's Processor Designer and synthesized into the Dong-bu 0.18um CMOS cell library using the Synopsys Design Compiler. With the proposed pseudorandom generator module, random number generation performance was 239% faster than software model, but the area increased only 2.0% of the proposed ASIP.

Low-power FFT/IFFT Processor for Wireless LAN Modem (무선 랜 모뎀용 저전력 FFT/IFFT프로세서 설계)

  • Shin Kyung-Wook
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.29 no.11A
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    • pp.1263-1270
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    • 2004
  • A low-power 64-point FFT/IFFT processor core is designed, which is an essential block in OFDM-based wireless LAM modems. The radix-2/418 DIF (Decimation-ln-Frequency) FFT algorithm is implemented using R2SDF (Radix-2 Single-path Delay Feedback) structure. Some design techniques for low-power implementation are considered from algorithm level to circuit level. Based on the analysis on infernal data flow, some unnecessary switching activities have been eliminated to minimize power dissipation. In circuit level, constant multipliers and complex-number multiplier in data-path are designed using truncation structure to reduce gate counts and power dissipation. The 64-point FFT/IFFT core designed in Verilog-HDL has about 28,100 gates, and timing simulation results using gate-level netlist with extracted SDF data show that it can safely operate up to 50-MHz@2.5-V, resulting that a 64-point FFT/IFFT can be computed every 1.3-${\mu}\textrm{s}$. The functionality of the core was fully verified by FPGA implementation using various test vectors. The average SQNR of over 50-dB is achieved, and the average power consumption is about 69.3-mW with 50-MHz@2.5-V.

A 2.0-GS/s 5-b Current Mode ADC-Based Receiver with Embedded Channel Equalizer (채널 등화기를 내장한 2.0GS/s 5비트 전류 모드 ADC 기반 수신기)

  • Moon, Jong-Ho;Jung, Woo-Chul;Kim, Jin-Tae;Kwon, Kee-Won;Jun, Young-Hyun;Chun, Jung-Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.12
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    • pp.184-193
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    • 2012
  • In this paper, a 5-bit 2-GS/s 2-way time interleaved pipeline ADC for high-speed serial link receiver is demonstrated. Implemented as a current-mode amplifier, the stage ADC simultaneously processes the tracking and residue amplification to achieve higher sampling rate. In addition, each stage incorporates a built-in 1-tap FIR equalizer, reducing inter-symbol-interference (ISI)without an extra digital post-processing. The ADC is designed in a 110nm CMOS technology. It comsumes 91mW from a 1.2-V supply. The area excluding the memory block is $0.58{\times}0.42mm^2$. Simulation results show that when equalizer is enabled, the ADC achieves SNDR of 25.2dB and ENOB of 3.9bits at 2.0GS/s sample rate for a Nyquist input signal. When the equalizer is disengaged, SNDR is 26.0dB for 20MHz-1.0GHz input signal, and the ENOB of 4.0bits.