• 제목/요약/키워드: CMOS 고속회로

검색결과 209건 처리시간 0.027초

Design of a High-Speed LVDS I/O Interface Using Telescopic Amplifier (Telescopic 증폭기를 이용한 고속 LVDS I/O 인터페이스 설계)

  • Yoo, Kwan-Woo;Kim, Jeong-Beom
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • 제44권6호
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    • pp.89-93
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    • 2007
  • This paper presents the design and the implementation of input/output (I/O) interface circuits for 2.5 Gbps operation in a 3.3V 0.35um CMOS technology. Due to the differential transmission technique and low voltage swing, LVDS(low-voltage differential signaling) has been widely used for high speed transmission with low power consumption. This interface circuit is fully compatible with the LVDS standard. The LVDS proposed in this paper utilizes a telescopic amplifier. This circuit is operated up to 2.3 Gbps. The circuit has a power consumption of 25. 5mW. This circuit is designed with Samsung $0.35{\mu}m$ CMOS process. The validity and effectiveness are verified through the HSPICE simulation.

On-Chip Full CMOS Current and Voltage References for High-Speed Mixed-Mode Circuits (고속 혼성모드 집적회로를 위한 온-칩 CMOS 전류 및 전압 레퍼런스 회로)

  • Cho, Young-Jae;Bae, Hyun-Hee;Jee, Yong;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • 제40권3호
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    • pp.135-144
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    • 2003
  • This work proposes on-chip full CMOS current and voltage references for high-speed mixed-mode circuits. The proposed current reference circuit uses a digital-domain calibration method instead of a conventional analog calibration to obtain accurate current values. The proposed voltage reference employs internal reference voltage drivers to minimize the high-frequency noise from the output stages of high-speed mixed-mode circuits. The reference voltage drivers adopt low power op amps and small- sized on-chip capacitors for low power consumption and small chip area. The proposed references are designed, laid out, and fabricated in a 0.18 um n-well CMOS process and the active chip area is 250 um x 200 um. The measured results show the reference circuits have the power supply variation of 2.59 %/V and the temperature coefficient of 48 ppm/$^{\circ}C$ E.

Implementation of CMOS 4.5 Gb/s interface circuit for High Speed Communication (고속 통신용 CMOS 4.5 Gb/s 인터페이스 회로 구현)

  • Kim, Tae-Sang;Kim, Jeong-Beom
    • Journal of IKEEE
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    • 제10권2호통권19호
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    • pp.128-133
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    • 2006
  • This paper describes a high speed interface circuit using redundant multi-valued logic for high speed communication ICs. This circuit is composed of encoding circuit that serial binary data are received and converted into parallel redundant multi-valued data, and decoding circuit that converts redundant multi-valued data to parallel binary data. Because of the multi-valued data conversion, this circuit makes it possible to achieve higher operating speeds than that of a conventional binary logic. Using this logic, the proposed 1:4 DEMUX (demultiplexer, serial-parallel converter), was designed using a 0.35um standard CMOS technology. Proposed DEMUX is achieved an operating speed of 4.5Gb/s with a supply voltage of 3.3V and with power consumption of 53mW. The operating speed of this circuit is limited by the maximum frequency which the 0.35um process has. Therefore, this circuit is to achieve CMOS communication ICs with an operating speed greater than 10Gb/s in submicron process of high operating frequency.

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High Speed Non-Inverting SOI Buffer Circuit by Adopting Dynamic Threshold Control (동적 문턱전압 제어 기법을 이용한 고속 비반전 SOI 버퍼 회로)

  • 이종호;박영준
    • Journal of the Korean Institute of Telematics and Electronics D
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    • 제35D권6호
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    • pp.28-36
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    • 1998
  • We have proposed a new non-inverting SOI buffer circuit for the high speed operation at low supply voltage. The body biases of main MOS devices in the proposed circuit are controlled dynamically via subsidiary MOS device connected efficiently to the body terminal. We showed current derivability of the body controlled devices obtained by device simulation and compared with that of conventional SOI devices. Delay time characteristics of the buffer circuit were analyzed by SPICE simulation and compared with those of conventional SOI CMOS buffer circuits. Delay time reduction of the SOI buffer over conventional SOI CMOS buffer with same area is about 36 % at $V_{S}$=1.2 V and $C_{L}$=2 pF. pF.

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Design of a New CMOS Differential Amplifier Circuit (새로운 구조를 갖는 CMOS 자동증폭회로 설계)

  • 방준호;조성익;김동용;김형갑
    • The Journal of Korean Institute of Communications and Information Sciences
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    • 제18권6호
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    • pp.854-862
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    • 1993
  • All of the CMOS analog and analog-digital systems have composed with several basic circuits, and among them, a important block, the amplifier part can affect the system's performance, Therefore, according to the uses in the system, the amplifier circuit have designed as various architectures (high-gain, low-noise, high-speed circuit, etc...). In this paper, we have proposed a new CMOS differential amplifier circuit. This circuit is differential to single ended input stage comprised of CMOS complementary gain circuits having internally biasing configurations. These architectures can be achieved the high gain and reduced the transistors for biasing. As a results of SPICE simulation with the standard $1.5{\mu}m$ processing parameter, the gain of the proposed circuit have a doubly value of the typical circuit's while maintaining other characteristics(phase margin, offset, etc...). And the proposed circuit is applicated in a simple CMOS comparator which has the settling time in 7nsec(CL=1pF) and the igh output swing $({\pm}4.5V)$.

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Design of a high-speed 4-2 compressor for fast multiplication (고속 곱셈연산을 위한 고속 4-2 compressor 설계)

  • Lee, Sung-Tae;Kim, Jeong-Beom
    • Proceedings of the Korea Information Processing Society Conference
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    • 한국정보처리학회 2009년도 추계학술발표대회
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    • pp.401-402
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    • 2009
  • 4-2 compressor는 곱셈기의 부분 곱 합 트리(partial product summation tree)의 기본적인 구성요소이다. 본 논문은 고속 연산이 가능한 4-2 compressor 구조를 제안한다. 제안한 회로는 최적화된 XORXNOR와 MUX로 구성하였다. 이 회로는 기존의 회로와 비교하였을 때 회로 구성에 필요한 트랜지스터수가 12개 감소하였으며, 지연시간이 32.2% 감소하였다. 제안한 회로는 Samsung 0.18um CMOS 공정을 이용하여 HSPICE로 시뮬레이션 하였다.

세계 3번째로 SRAM시대열어 - 256KD 램 보다 고부가가치 8월부터 생산수출

  • 한국발명진흥회
    • 발명특허
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    • 제10권8호통권114호
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    • pp.64-64
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    • 1985
  • 금성반도체(대표 : 구자두)는 미국, 일본에 이어 세계 3번째로 첨단반도체제품인 CMOS 64K SRAM을 자체개발하는데 성공했다. 국내 최초로 개발된 금성반도체의 CMOS 64K SRAM은 우리나라의 반도체 기술수준을 선진국 수준으로 성큼 다가서게 했다. CMOS 64K SRAM은 NMOS의 256K DRAM에 비해 작동속도가 2배이상 빠를 뿐만 아니라 재충전이 필요없는 완전한 스태틱(static) RAM으로 대용량$\cdot$고속$\cdot$고신뢰성을 요하는 고성능 컴퓨터, 통신장비등 첨단 산업용 기기의 기억장치에 주로 사용된다.

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Simultaneous Switching Characteristic Analysis and Design Methodology of High-Speed & High-Density CMOS IC Package (고밀도 고속 CMOS 집적회로에서 동시 스위칭에 의한 패키지 영향해석 및 패키지 설계방법)

  • 박영준;최진우;어영선
    • Journal of the Korean Institute of Telematics and Electronics C
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    • 제36C권11호
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    • pp.55-63
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    • 1999
  • A new CMOS If Package design methodology is presented, analyzing the electrical characteristics of a package and its effects on the CMOS digital circuits. An analytical investigation of the package noise effects due to the simultaneous switching of the gates within a chip, i.e., simultaneous switching noise (SSN) is performed. Then not only are novel design formula to meet electrical constraints of the Package derived, but also package design methodology based on the formula is proposed. Further, in order to demonstrate the Proposed design methodology, the design results are compared with HSPICE (a general purpose circuit simulator) simulation for $0.3\mu\textrm{m}$-based CMOS circuits. According to the proposed design procedures, it is shown that the results have excellent agreements with those of HSPICE simulation.

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Design of 10Gbps CMOS Receiver Circuits for Fiber-Optic Communication (광통신용 10Gbps CMOS 수신기 회로 설계)

  • Park, Sung-Kyung;Lee, Young-Jae;Byun, Sang-Jin
    • Journal of IKEEE
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    • 제14권4호
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    • pp.283-290
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    • 2010
  • This study is on the design of 10Gbps CMOS receiver circuits for fiber-optic communication. The receiver is made up of a photodiode, a transimpedance amplifier, a limiting amplifier, an equalizer, a clock and data recovery loop circuit, and a demultiplexer or demux with some auxiliary circuits including I/O circuits. Various wideband or high-speed circuit techniques are harnessed to realize a feasible, effective, and reliable receiver for a SONET fiber-optic standard, OC-192.

Giga-bps CMOS Clock and Data Recovery Circuit with a novel Adaptive Phase Detector (새로운 구조의 적응형 위상 검출기를 갖는 Gbps급 CMOS 클럭/데이타 복원 회로)

  • 이재욱;이천오;최우영
    • The Journal of Korean Institute of Communications and Information Sciences
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    • 제27권10C호
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    • pp.987-992
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    • 2002
  • In this paper, a new clock and data recovery circuit is proposed for the application of data communication systems requiring ㎓-range clock signals. The circuit is suitable for recovering NRZ data which is widely used for high speed data transmission in ㎓ ranges. The high frequency jitter is one of major performance-limiting factors in PLL, particularly when NRZ data patterns are used. A novel phase detector is able to suppress this noise, and stable clock generation is achieved. Futhermore, the phase detector has an adaptive delay cell removing the dead zone problem and has the optimal characteristics for fast locking. The proposed circuit has a convenience structure that can be easily extended to multi-channels. The circuit is designed based on CMOS 0.25㎛ fabrication process and verified by measurement result.