• Journal of Korea Port Economic Association
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• v.22 no.2
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• pp.83-108
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• 2006

Regarding the ocean carrier's responsibility for damage indemnification, both his or her duty of care and reason of legal exemption have been considered important. The International Convention for the Unification of Certain Rules relating to Bills of Lading also provides that the ocean carrier indemnifies for the loss or damage of freight on the basis of the principle of liability with fault. In other words, the carrier assumes responsibility only for the loss or damage of freight which is under his or her control and whose safety must be carefully maintained by him or her. The carrier's duty of care which is required for freight safety in accordance with the convention is associated with two themes, seaworthiness of vessel and freight itself. To make ocean freight shipping effective necessities the seaworthiness of the ship that will conduct the shipping service under its responsibility. This will ultimately lead to making the service impressive to the shipper as freight owner. Thus the purpose of this study is to contribute to more reasonable shipping by the shipowner or the carrier who needs to ensure seaworthiness of vessel, and prevent unseaworthiness that may be incurred in accordance with freight characteristics. For the purpose, this paper reviewed the meaning of seaworthiness of vessel through a juridical approach to its causal relationship with ocean freight shipping.

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.11-15
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• 2016

This paper, Ga-doped ZnO (GZO) thin films which were deposited on Corning glass substrate using an magnetron sputtering deposition technology and then the post deposition annealing process was conducted for 30 minutes at different temperature of 100, 200, 300, and $400^{\circ}C$, respectively. So as to investigate the properties for the relevant the Concentration and Oxygen Vacancy with Annealing temperature of Ga-doped ZnO thin films by RF Sputtering method. The Carrier concentration is enhanced as annealing temperature decreases, and also the oxygen vacancy concentration is enhanced as annealing temperature decreased. Oxygen vacancy will decrease along with Carrier concentration. This change in Carrier concentration is related to changes in oxygen vacancy concentration. The figure of merit obtained in this study means that Ga-doped ZnO films which annealed at $400^{\circ}C$ have the lowest Carrier concentration and Oxygen vacancy, which have the highest optoelectrical performance that it could be used as a transparent electrode.

• Journal of Arbitration Studies
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• v.13 no.2
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• pp.377-401
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• 2004

Delay in the air transport occurs when passengers, baggage or cargo do not arrive at their destination at the time indicated in the contract of carriage. The causes of delay in the carriage of cargo are no reservation, lack of space, failure to load the cargo on board, loading the cargo on the wrong plane, failure to off-load the cargo at the right place, or to deliver the covering documents at the right place. The Montreal Convention of 1999 Article 19 provides that "The carrier is liable for damage occasioned by delay in the carriage by air of cargo. Nevertheless, the carrier shall not be liable for damage occasioned by delay if it proves that it and its servants and agents took all measures that could reasonably be required to avoid the damage or that it was impossible for it or them to take such measures." The Montreal Convention Article 22 provides liability limits of the carrier in case of delay for cargo. In the carriage of cargo, the liability of the carrier is limited to 17 SDR per kilogram unless a special declaration as to the value of the cargo has been made. The Montreal Convention Article 19 has shortcomings: it is silent on the duration of the liability for carriage. It does not give any indication concerning the circumstances to be taken into account in cases of delay, and about the length of delay. In conclusion, it is desirable to define the period of carriage with accuracy, and to insert the word 'unreasonable' in Article 19.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2018.11a
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• pp.310-312
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• 2018

In this paper, We stduy addtional consideration and method to treat carrier frquency offset on defined system parameter & requirements in IALA G1139, previous studied consecutively. We studied the method to treat carrier frequency offset by extending length of training symbol and by differential modulation. This study will publish and argue in IALA ENAV22. We will decide a method to treat carrier frequency offset from result of IALA ENAV22.

• ETRI Journal
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• v.42 no.5
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• pp.773-780
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• 2020

A 40 nm complementary metal oxide semiconductor carrier-aggregated drive amplifier with high linearity is presented for sub-GHz Internet of Things applications. The proposed drive amplifier consists of two high linear amplifiers, which are composed of five differential cascode cells. Carrier aggregation can be achieved by switching on both the driver amplifiers simultaneously and combining the two independent signals in the current mode. The common gate bias of the cascode cells is selected to maximize the output 1 dB compression point (P1dB) to support high-linear wideband applications, and is used for the local supply voltage of digital circuitry for gain control. The proposed circuit achieved an output P1dB of 10.7 dBm with over 22.8 dBm of output 3rd-order intercept point up to 0.9 GHz and demonstrated a 55 dBc adjacent channel leakage ratio (ACLR) for the 802.11af with -5 dBm channel power. To the best of our knowledge, this is the first demonstration of the wideband carrier-aggregated drive amplifier that achieves the highest ACLR performance.

• Journal of Communications and Networks
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• v.7 no.1
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• pp.21-28
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• 2005

In this paper, we analyze the performance of code division multiple access (CDMA) systems with orthogonal frequency division multiplexing (OFDM) that employ random spreading sequences in an additive white Gaussian noise (AWGN) channel. We obtain the probability density function (pdf) of the multiple access interference and extend the results to OFDM-CDMA systems to determine the pdf of multiple access and inter-carrier interference in terms of the number of users, the spreading length, the number of sub-carriers, and the frequency offset. We consider the synchronous downlink of cellular multi-carrier CDMA and derive a Gaussian approximation of the multiple access and inter-carrier interference. Overall the effect of frequency offset is shown to vary with the system loading. The analysis in this paper is critical for further development into fading channels and frequency selective multipath channels.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38C no.9
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• pp.787-796
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• 2013

In this paper, the visible light communication (VLC) techniques based on the carrier modulation are considered in order to realize the VLC application service that has the functions of the high speed optical sensing and the wide range reception from VLC transmitter. The VLC hardware circuits based on the 32.768 kHz low frequency carrier and 4 MHz high frequency carrier are designed and implemented respectively, and the signal waveform generated from the implemented circuits are observed. In addition, various performance experiments are done with the prototypes.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.6
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• pp.543-549
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• 2005

This paper presents a carrier-based modulation method for the control of a matrix converter. By using the offset voltage and changing the slope of the carrier, it is possible to synthesize sinusoidal input currents with unity power factor and the desired output voltages. The proposed method is equivalent to the so called SVPWM (Space Vector PWM) method, but its implementation is much easier. Moreover, the proposed method is very attractive because it is possible to apply the 2 phase t 3 phase modulation method, overmodulation method and other methods which are well-developed in the study of voltage source inverters (VSI) to the matrix coverter modulation. The feasibility of the proposed modulation method has been verified by computer simulation and experimental results.

• Journal of Satellite, Information and Communications
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• v.5 no.1
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• pp.6-16
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• 2010

Since OFDM system suffers from high peak-to average power ratio(PAPR) drawbacks, more energy has been converted to seek for a new substitutable system which can maintain OFDM system's inherent virtues while avoid its defects. Consequently, a new multicarrier system called as CI/OFDM system has been proposed which applied carrier interferometry(CI) code to OFDM system. Due to its low PAPR advantage and orthogonal property, it has received more and more attention. Simultaneously, an old technique called single carrier(SC) system has retaken its attractions for the same purposes. This paper analyzes two cyclic prefixed transmission schemes variants of OFDM system: 1.carrier interferometry-Orthogonal Frequency-Division Multiplexing (CI/OFDM); 2. Cyclic prefixed single carrie(CP-SC) with frequency domain equalization. We compare the achievable bit rate transmission of the two systems in terms of signal to noise ratio(SNR) by mathematical derivation. We demonstrated that CI/OFDM achieves a bit higher transmission bit rate to that of the CP-SC with frequency domain equalizer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.89-90
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• 2007

This paper presents the mechanical properties of 3C-SiC thin film according to 0, 7, and 10% carrier gas $(H_2)$ concentrations using Nano Indentation. When carrier gas $(H_2)$ concentration was 10%, it has been proved that the mechanical properties, elastic modulus and hardness, of 3C-SiC are the best of them. In the case of 10% carrier gas concentration, Young's modulus and Hardness were obtained as 367 GPa and 36 GPa, respectively. When the surface roughness according to $H_2$ concentrations was investigated by AFM (atomic force microscope), when $H_2$ concentration was 10%, the roughness of 3C-SiC thin was 9.92 nm, which is also the best of them. Therefore, in order to apply poly 3C-SiC thin film to MEMS applications, $H_2$ concentration's rate should increase to obtain better mechanical properties and surface roughness.