• Proceedings of the IEEK Conference
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• summer
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• pp.209-212
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• 2004

In this paper, The stress induced leakage currents of thin silicon oxides is investigated in the nano scale structure implementation for Soc. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41\square\;and\;113.4\square,$ which have the channel width x length 10x1um, respectively. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.126-129
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• 2003

Electron beam guides hold the promise of a flat-panel display based on CRT technology. We propose to integrate the periodic focusing electrodes of such beam guides on a glass channel plate for a robust and simple design. The feasibility of this idea is tested numerically and experimentally.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.439-440
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• 2010

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.48-55
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• 2024

The changes in threshold voltage and DIBL were investigated for changes in remanent polarization P_r and coercive field E_c, which determine the characteristics of the P-E hysteresis curve of ferroelectric in NCFET (negative capacitance FET). The threshold voltage and DIBL (drain-induced barrier lowering) were observed for a junctionless double gate MOSFET using a gate oxide structure of MFMIS (metal-ferroelectric-metal-insulator-semiconductor). To obtain the threshold voltage, series-type potential distribution and second derivative method were used. As a result, it can be seen that the threshold voltage increases when P_r decreases and E_c increases, and the threshold voltage is also maintained constant when the P_r/E_c is constant. However, as the drain voltage increases, the threshold voltage changes significantly according to P_r/E_c, so the DIBL greatly changes for P_r/E_c. In other words, when P_r/E_c=15 pF/cm, DIBL showed a negative value regardless of the channel length under the conditions of ferroelectric thickness of 10 nm and SiO₂ thickness of 1 nm. The DIBL value was in the negative or positive range for the channel length when the P_r/E_c is 25 pF/cm or more under the same conditions, so the condition of DIBL=0 could be obtained. As such, the optimal condition to reduce short channel effects can be obtained since the threshold voltage and DIBL can be adjusted according to the device dimension of NCFET and the P_r and E_c of ferroelectric.

• Journal of computational fluids engineering
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• v.7 no.3
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• pp.53-59
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• 2002

A two-dimensional laminar flow through a channel with a pair of symmetric vertical fins is investigated. At far up- and down-stream from the fins, the plane Poiseuille flow exists in the channel. The Stokes flow for this channel is first investigated analytically and then the other laminar flows by numerical method. For analytic method, the method of eigen function expansion and collocation method are employed. In numerical solution for laminar flows, finite difference method(FDM) is used to obtain vorticity and stream function. From the results, the streamline patterns are shown and the additional pressure drop due to the attached fins and the force exerted on the fin are calculated. It is clear that the force depends on the length of fins and Reynolds number. When the Reynolds number exceeds a critical value, the flow becomes asymmetric. This critical Reynolds number Re/sub c/ depends on the length of the fins.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1761-1765
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• 2005

The plastic injection molding industry is increasing pressure to reduce the cycle time in order to improve the productivity. The time of a cooling die is a large part of the cycle time. The conformal cooling channels can reduce the cooling time effectively as compared with conventional production die. It is hard to make the die with a conformal cooling channel by the conventional method. This paper introduces the method of a conformal cooling channel manufacturing by the DMT (Direct Metal Tooling) that is a new technology.

• Transactions of Materials Processing
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• v.15 no.9 s.90
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• pp.692-696
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• 2006

Micro fabrication of polymeric materials becomes increasingly important. And it is considered as a low-cost alternative to the silicon or glass-based Micro Electro-Mechanical System(MEMS) technologies. In the present study, micro channels were fabricated via LiGA(Lithographie, Galvanoformung, Abformung) process used for Capillary Electrophoresis(CE) chip. Taguchi method was applied to investigate the effects of process conditions in injection molding(melt temperature, injection speed, mold temperature and packing pressure) on the transcription characteristics of the micro channel. It was found that the skin layer disturbs a formation of micro channel. Furthermore, mold temperature and injection speed were two important factors to affect the replication characteristics of micro channel.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.839-842
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• 1998

The wide spread of multimedia system demands a large viewin gdesply device which can inform a message to many peoples in open area. This paper is about the design, simulating and testing of a large viewing LED pannel control ASIC(application specific integrated circuit). This LED pannel control ASIC runs on 16 bit microprocessor MC68EC000 and has following functions:16 line interlaced LED pannel controller, memory controller, 16 channel priority inerrupt controller, 2 channel direct memory access controller, 2 channel 12 bit clock and timer, 2 channel infrared remocon receiver, 2 channel RS-232C with 16byte FIFO, IBM PC/AT compatible keyboard interface, battery backuped real time clock, ISA bus controller, battery backuped 256 byte SRAM and watech dog timer. The 0.6micron CMOS sea of gate is used to design the ASIC in amount of about 39,000 gates.

• 한국전산유체공학회:학술대회논문집
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• 2010.05a
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• pp.352-357
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• 2010

A parametric study has been carried out to elucidate the characteristics of channel flow with a streamwise-periodic array of cylinders. This flow configuration is relevant to heat exchanger applications. The presence of cylinders in channel flow causes the attached wall boundary layer to separate, leading to significant change in flow instabilities. There exist two kinds of instabilities; flow undergoes a primary instability (Hopf bifurcaiton) at a lower Reynolds number, and the unsteady two-dimensional flow becomes unstable to three-dimensional disturbances at a higher Reynolds number. We report here the dependencies of the primary instability as well as the flow characteristics of the subsequent unsteady flow including flow-induced forces and Strouhal number of vortex shedding, on the distance between the cylinder and the channel wall.

• YAKHAK HOEJI
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• v.54 no.6
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• pp.461-465
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• 2010

We investigated the role of L-type $Ca^{2+}$ channel in receptor activator of nuclear factor-kappaB ligand (RANKL)-induced osteoclast formation. BayK 8644, a L-type $Ca^{2+}$ channel agonist, was shown to increase the RANKLinduced osteoclastogenesis and actin ring formation in mouse bone marrow-dereived macrophage (BMM) culture system. BayK 8644 stimulated RANKL-induced extracellular signal-regulated kinase (ERK) and p38 MAP kinase (MAPK) activation, which leads to increased nuclear factor of activated T cells (NFAT)c1 expression. Taken together, these data indicate that L-type $Ca^{2+}$ channel regulates osteoclast formation possibly through ERK- and p38-mediated NFATc1 expression.