• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.135-135
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• 2010

In Mn-Ge equilibrium phase diagram, many Mn-Ge intermetallic phases can be formed with difference structures and magnetic properties. The MnGe has the cubic structure and antiferromagnetic(AFM) with Neel temperature of 197 K. The calculation predicted that the $MnGe_2$ with $Al_2Cu$-type is hard to separate between the paramagnetic(PM) states and the AFM states because this compound displays PM and AFM configuration swith similar energy. Mn-doped Ge showed the FM with Currie temperature of 285 K for bulk samples and 116 K for thin films. In addition, the $Mn_5Ge_3$ compound has hexagonal structure and FM with Curie temperature around 296K. The $Mn_{11}Ge_8$ compound has the orthorhombic structure and Tc is low at 274 K and spin flopping transition is near to 140 K. While the bulk $Mn_3Ge_2$ exhibited tetragonal structure ($a=5.745{\AA}$;$c=13.89{\AA}$) with the FM near to 300K and AFM below 150K. However, amorphous $Mn_3Ge_2$ ($a-Mn_3Ge_2$) was reported to show spin glass behavior with spin-glass transition temperature (Tg) of 53 K. In addition, the transition of crystalline $Mn_3Ge_2$ shifts under high pressure. At the atmospheric pressure, $Mn_3Ge_2$ undergoes the magnetic phase transition from AFM to FM at 158 K. The pressure dependence of the phase transition in $Mn_3Ge_2$ has been determined up to 1 GPa. The transition was found to occur at 1 GPa and 155 K with dT/dP=-0.3K/0.1 GPa. Here report that Ferromagnetic $Mn_3Ge_2$ thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. Our result revealed that the substrate facilitates to modify magnetic and electrical properties due to tensile/compressive strain effect. The spin-flopping transition around 145 K remained for samples grown on GaSb(001) while it completely disappeared for samples grown on GaAs(001). The antiferromagnetism below 145K changed to ferromagnetism and remained upto 327K. The saturation magnetization was found to be 1.32 and $0.23\;{\mu}B/Mn$ at 5 K for samples grown on GaAs(001) and GaSb(001), respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.2
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• pp.65-69
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• 2011

The $Tio_2$ films were prepared on glass, silicon and quartz substrate at different temperature by radio frequency reactive magnetron sputtering under different flow ratios of Ar and O2 gases. The films were characterized by X-ray diffractometer (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and UV-VIS spectrophotometer. Only the anatase phase was observed in films and their diffaction peaks increased with temprature of substrate. The size of crystallites decreased with higher concentration of oxygen. Refractive index and optical absorption of thin films decreased with higher concentration of oxygen. The thin films which have good transmittance spectra and smooth surface, deposited in the sputtering ambient with 10 % of $O_2$ at the temperature from $400{\circ}C$ to $300{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.218.2-218.2
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• 2014

그래핀은 높은 전기 전도도와 열전도도, 기계적 강도를 가지고 있고 동시에 높은 전자이동도($200,000cm^2{\cdot}V{\cdot}^1{\cdot}s{\cdot}^1$) 특성을 갖는 물질로써 차세대 소재로 각광받고 있다. 하지만 그래핀을 소자에 응용하기 위해서는 전사공정과 lithography 공정 과정에서 발생되는 PMMA(Poly methyl methacrylate) residue를 완벽하게 제거해야 하는 문제점이 있다. 특히, lithography 공정 중 완벽하게 PMMA residue 가 제거되지 않고 잔류해 있을 경우에 소자의 life time, performance에 악영향을 준다는 보고가 있다. 이와같은 문제를 해결하기 위해 화학적 cleaning, 열처리를 통한 cleaning, 전류 인가에 의한 cleaning과 같은 방법들을 이용하여 그래핀의 PMMA residue를 제거하는 공정들이 보고되고 있지만, 화학적 cleaning 방법의 경우 chloroform 이라는 독성물질 사용으로 인해 산업적으로 응용이 어렵고, 열처리 방법은 전극 등의 금속이 $200^{\circ}C$ 이상의 높은 온도에서 장시간 노출될 경우 쉽게 손상을 입으며, 전류 인가에 의한 cleaning 방법은 국부적으로만 효과를 볼 수 있기 때문에 lithography 공정 후 PMMA residue를 효과적으로 제거하기에는 한계를 보이고 있다. 본 연구에서는 Ar을 이용하는 Ion beam 시스템을 통해 beam energy를 제어함으로써 PMMA residue를 효과적으로 제거하는 연구를 진행하였다. 최적화된 플라즈마 발생 조건을 찾기 위해 QMS(Quadrupole Mass Spectrometer)를 이용하여 입사하는 ion energy와 flux 양을 컨트롤 하였고, 250 W에서 최적화된 ion energy distribution 영역이 존재한다는 것을 확인할 수 있었다. 또한, 25 Gauss 정도의 electro-magnetic field를 이용하여 Ar의 ion energy를 10 eV 이하로 낮추어 damage를 최소화함으로써 효과적으로 그래핀을 cleaning 할 수 있었다. Cleaning과정에서 ion bombardment에 의해 발생한 damage는 $250^{\circ}C$에서 6시간 동안 annealing 공정을 거치면서 회복되는 것을 Raman spectroscopy의 D peak ($1335cm{\cdot}^1$) / G peak ($1572cm{\cdot}^1$) ratio 로 확인할 수 있었고, PMMA residue의 cleaning 여부는 G peak ($1580cm{\cdot}^1$)의 blue shift와 2D peak ($2670cm{\cdot}^1$)의 red shift를 통해 확인하였다. 그리고 AFM (Atomic Force Microscopy)을 이용하여 cleaning 공정과정에서 RMS roughness가 4.99 nm에서 2.01 nm로 감소하는 것을 관찰하였다. 마지막으로, PMMA residue의 cleaning 정도를 정량적으로 분석하기 위해 XPS (X-ray Photoelectron Spectroscopy)를 이용하여 sp2 C-C bonding이 74.96%에서 87.66%로 증가함을 확인을 할 수 있었다.

• Polymer(Korea)
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• v.30 no.5
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• pp.407-411
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• 2006

The SiC-based ceramic nanopatterns were prepared by placing polydimethylsiloxane (PDMS) mold from DVD master on the spincoated polyvinylsilaeane (PVS) or allylhydridopolycaybosilane (AHPCS) as ceramic precursors to fabricate line pattern via UV-nanoimprint lithography (UV-NIL), and subsequent pyrolysis at $800^{\circ}C$ in nitrogen atmosphere. As the dimensional change of polymeric and ceramic patterns was comparatively investigated by AFM and SEM, the shrinkage in height was 38.5% for PVS derived pattern and 24.1% for AHPCS derived pattern while the shrinkage in width was 18.8% for PVS and 16.7% for AHPCS. It indicates that higher ceramic yield of the ceramic precursor resulted in less shrinkage, and the strong adhesion between the substrate and the pattern caused anisotropic shrinkage. This preliminary work suggests that NIL is a promissing route for fabricating ceramic MEMS devices, with the development on the shrinkage control.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.5
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• pp.696-702
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• 2002

The BST $({Bal-xSrxTiO_3})$ (50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively. The BST thin film annealed at $800^{\circ}C$ for 2 min has pure perovskite structure and good surface roughness of 16.1$\AA$. As the film thickness increases from 80 nm to 240 nm, the dielectric constant at 10 KHz increases from 199 to 265 and the leakage current density at 250 ㎸/cm decreases from $0.779 {\mu}A/{cm^2} to 0.184 {\mu}A/{cm^2}$. In the case of 240 nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5 fC/${{\mu}m^2} and 0.182 {\mu}A/{cm^2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.313-320
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• 2011

100 nm-thick hydrogenated amorphous silicon $({\alpha}-Si:H)$ films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to $550^{\circ}C$. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >$400^{\circ}C$. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above $400^{\circ}C$ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at $550^{\circ}C$ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.38 no.2
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• pp.139-145
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• 2012

There is a unique type of fatty acid in the hair surface. 18-methyleicosanoic acid (18-MEA) is an unusual anteiso fatty acid covalently linked to the outermost surface of hair cuticle. A layer of 18-MEA is located in the upper ${\beta}$-layer of the CMC that is responsible for the low surface energy and low friction resistance of the hair's outer surface. The high mobility of 18-MEA molecule facilitates spreading of extraneous lipid by decreasing interfacial shear strength. In this study, we introduced N-hydroxyl succinimidyl ester functional group to the one end of C10 - 40 isoalkyl acid for regenerating hair surface with covalently bound fatty acid layer. The re-hydrophobicization of hair surface has been investigated by contact angle measurement. The inner moisture content of hair at different levels of humidity (40, 55, 70 %RH) was measured by electric moisture analyzer. Treatment with Hydroxysuccinimidyl C10 - 40 Isoalkyl Acidate (HCIA) was supposed to make hair surface smoother by filling the cracks between cuticles with covalently bound fatty acid monomolecular layer like cuticle glue. This glue effect was also confirmed with line profile of AFM images. Therefore, the moisture and structural components of inner hair were not easily flown out and the optimum moisture content could be kept constantly though the outside humidity level was changed. The lateral force microscopy (LFM) by using atomic force microscope showed that the friction force of hair surface treated with HCIA was decreased. It also showed the constantly sustained friction value even after shampooing repeated 15 times.

• Polymer(Korea)
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• v.33 no.5
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• pp.407-412
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• 2009

Vacuum deposited N,N-di-1-naphthyl-N,N-diphenyl-1,1'-biphenyl-4,4'-diamine (NPD) as a hole transporting (HTL) materials in OLEDs was placed on PEDOT-PSS, a hole injection layer (HIL). PEDOT-PSS was spin-coated on to the ITO glass. $C_{60}$-doped NPD-$C_{60}$(10 wt%) film was formed via co-evaporation process and the morphology of NPD-$C_{60}$ films was investigated using XRD and AFM. The J - V, L - V and current efficiency of multi -layered devices were characterized. According to XRD results, the deposited $C_{60}$ thin film was partially crystalline, but NPD-$C_{60}$ film was observed not to be crystalline, which indicates that $C_{60}$ molecules are uniformly dispersed in the NPD film. By using $C_{60}$-doped NPD-$C_{60}$ film as a HTL, the current density and luminance of multi-layered ITO/PEDOT-PSS/NPD-$C_{60}/Alq_3$/LiF/Al device were significantly increased by about 80% and its efficiency was improved by about 25% in this study.

• Polymer(Korea)
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• v.32 no.4
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• pp.372-376
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• 2008

Vacuum deposited 4,4',4"-tris(N-(2-naphthyl)-N-phenylamino)-triphenylamine (2-TNATA), used as a hole injection (HIL) material in OLEDs, is placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in the devices. C60-doped 2-TNATA:C60 (20 wt%) film was formed via co-evaporation process and molecular ordering and topology of 2-TNATA:C60 films were investigated using XRD and AFM. The J-V, L-V and current efficiency of multi-layered devices were characterized as well. Vacuum-deposited C60 film was molecularly oriented, but neither was 2-TNATA:C60 film due to the uniform dispersion of C60 molecules in the film. By using C60-doped 2-TNATA:C60 film as a HIL, the current density and luminance of a multi-layered ITO/2-TNATA:C60/NPD/$Alq_3$/LiF/Al device were significantly increased and the current efficiency of the device was increased from 4.7 to 6.7 cd/A in the present study.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.80-83
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• 2000

In this work we deposited Pentacene thin film by OMBD at the various substrate temperatures, deposition rate and the various annealing temperatures for the fabrication of organic TFT and investigated the electrical and film surface characteristics such as sheet resistance, contact resistance and conductance Film thickness were measured by $\alpha$-step and the sheet resistance, contact resistance and conductance were extracted from the relation between the distance of the contacts and the resistance. During the film deposition the substrate temperature was held at 3$0^{\circ}C$, 4$0^{\circ}C$, 5$0^{\circ}C$, 6$0^{\circ}C$, 8$0^{\circ}C$ and 10$0^{\circ}C$, respectively. After the film deposition, Au contact was deposited by thermal evaporation. For the effect of annealing, the thin film was annealed in the nitrogen environment at 10$0^{\circ}C$ and 14$0^{\circ}C$ for 10 seconds, respectively. Film surface characteristics at the vatious substrate temperatures were measured by AFM. The crystallization of thin film was improved as the substrate temperatures were increased and the maximum gram size was 4${\mu}{\textrm}{m}$. The conductivity of thin film was found to be 7.40 $\times$10$^{-7}$ ~ 7.78$\times$10$^{-6}$ S/cm and the minimum contact resistance was 2.5324 ㏁.