• Tribology and Lubricants
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• v.4 no.2
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• pp.36-43
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• 1988

Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.

• Korean Journal of Mathematics
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• v.18 no.3
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• pp.253-259
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• 2010

In this paper we establish approximation of contraction C-semigroups on the extrapolation space $X^C$, by showing the equicontinuity of contraction C-semigroups on $X^C$.

• Journal of the Korean Geotechnical Society
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• v.15 no.6
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• pp.87-98
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• 1999

Consolidation settlements on soft clay are often greatly and potentially damaging to structures. Currently, large-scale projects are in planning or progressing in Korea. These structures will be constructed on both thick and soft clay layers, and so the accurate evaluation of magnitude of settlement is required at every step in design and construction. Especially, secondary compression may play an important role in consolidation settlements of soft clay. Generally, the magnitudes of secondary compression are evaluated by laboratory and in-situ consolidation tests. The empirical $C_a/C_c$ may be economical, fast and powerful tool in estimating secondary consolidation settlement. However, the databases of the $C_a/C_c$ at construction site in Korea are insufficient. The purpose of this study is to investigate the relationship of $C_a/C_c$ on marine clay near the southern sea in Korea. A series of incremental loading consolidation tests (measuring base pore water pressure) is peformed. It was found that the $C_a/C_c$ on undisturbed marine clay is 0.0397.

• The Korean Journal of Mycology
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• v.26 no.1 s.84
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• pp.1-7
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• 1998

In order to find relationship within and between entomopathogenic species, analysis of protein band pattern in mycelia of 25 isolates was conducted by UPGMA. The results allowed differentiation of three groups on 85% similarity coefficient. Similarity coefficient within C. militaris was $0.787{\sim}1.000$, C. kyushuensis was 0.958-1.000 and C. pruinosa was 0.993-1.000. C210 and C298 isolates which had somewhat immersed perithecia, comparable to other C. militaris isolates, had 91% similarity. C108, C225-1 and C228 isolates pathogenic on Lepidopterous larvae had 89% similarity. Closely related species to C. militaris were C. kyushuensis and C. pruinosa. And similarity between C. pruinosa and C. kyushuensis was 88%. Similarity between C. bifusispora formed conidia on media and Paecilomyces tenuipes was 89%. C. scarabaeicola pathogenic specifically on adult Scarabaeidae had 82% similarity with above two species. C118 identified as C. militaris showed different protein banding patterns.

• Journal of the Korean institute of surface engineering
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• v.38 no.4
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• pp.174-178
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• 2005

Chemical vapor deposition technique has been used to grow epitaxial SiC thin films on Si wafers using tetramethylsilane(TMS) precursor. The films were observed to grow along (110) direction of 3C-SiC at $800^{\circ}C$. The quality of the films was significantly influenced by the TMS flow rate and growth temperature. Nanocrystal SiC films were grown at flow rates of TMS 10 sccm with $H_2$ carrier gas of 100 sccm. The temperature and gas pressure in the reactor have a great influence on the crystallinity and morphology of the SiC film grown. The growth mechanism of the SiC film on the Si substrate without the carbonization process was discussed based on the experimental results.

• Bulletin of the Korean Mathematical Society
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• v.61 no.3
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• pp.813-823
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• 2024

In this paper, we prove that every 2-local derivation on several classes of C^*-algebras, such as unital properly infinite, type I or residually finite-dimensional C^*-algebras, is a derivation. We show that the following statements are equivalent: (1) every 2-local derivation on a C^*-algebra is a derivation, (2) every 2-local derivation on a unital primitive antiliminal and no properly infinite C^*-algebra is a derivation. We also show that every 2-local derivation on a group C^*-algebra C^*(𝔽) or a unital simple infinite-dimensional quasidiagonal C^*-algebra, which is stable finite antiliminal C^*-algebra, is a derivation.

• Macromolecular Research
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• v.14 no.3
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• pp.354-358
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• 2006

Polybutadiene (BR) was pyrolyzed at $540-860^{\circ}C$ and the effect of pyrolysis temperature on variations in the relative abundance of the major pyrolysis products (C4-, C5-, C6-, C7-, and C8-species) was investigated. Formation of the C4-, C5-, C6-, and C7-species competed with that of the C8-species. Relative intensity of the C8-species decreased with increasing pyrolysis temperature, while that of the C5-, C6-, and C7-species increased. Pyrolysis paths were became more complicated with increasing pyrolysis temperature. We suggested the operation of double bond migration and succeeding rearrangements for the formation of the C5- and C7-species and various rearrangements, including a double bond, for the formation of the C6-species at high temperature. The activation energies for the pyrolysis product ratios of(C5+C6+C7)/C4 and C8/C4 were used to explain the competition reactions to form the pyrolysis products.

• Korean Journal of Food Science and Technology
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• v.15 no.1
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• pp.56-61
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• 1983

Direct production of biomass from starch using amylolytic yeast, Sporobolomyces holsaticus FRI Y-5 was studied with varying the ratios between carbon and other nutrient sources in the medium. It was investigated under condition of constant C/P and C/S ratio to influence the initial concentration of starch $(S_o)$ and C/N ratio on its growth which is described as the specific growth rate $({\mu})$, cell yield (Y), the maximum concentration of cell $(X_m)$, and productivity (P). They were very dependent on both $S_o$ and C/N ratio. The form of the relationship between and ${\mu}$ and $S_o$ was observed to be similar to saturation kinetics at C/N = 100 but presented substrate inhibition at other C/N ratios. As $S_o$ was changed from 22.5 to 90 g/l, Y was observed to vary with C/N ratios but seemed to decrease as a wholes. $X_m$ was linearly related to $S_o$ at more than C/N = 50 but at less than C/N = 10 substrate inhibition was presented. P increased suddenly to $S_o$ = 45 g/l and then changed decreasingly at less than C/N = 50, but at more than C/N = 100 it changed increasingly. The effect of C/P ratio and C/S ratio on the yeast growth was also investigated at constant $S_o$ and C/N ratio. ${\mu}$ was dependent on C/P and C/S ratios, but Y, independent on them. But $X_m$ was reliant upon C/P ratio but not upon C/S ratio.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1593-1595
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m/hr$. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The hetero-epitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• Proceedings of the Korean Geotechical Society Conference
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• 1999.03a
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• pp.373-380
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• 1999

Consolidation settlements of soft clay are often large and potentially damaging to the structures. Currently, large-scale construction projects for airport and harbor etc. are in progress in Korea and many of these structures will be constructed on thick and soft clay layers. For this kind of ground condition, evaluation of consolidation settlement is required at every design and construction stages, and the magnitude of secondary compression appears to be larger than expected. Generally, the magnitude of secondary compression is evaluated by laboratory and in-situ consolidation tests or by empirical $C_{a/}$ $C_{c}$, relationship. The use of empirical value $C_{a/}$ $C_{c}$ may be economical, fast and powerful tool in estimating secondary consolidation settlement. However, the databases of the $C_{a/}$ $C_{c}$, for typical soft clays in Korea are insufficient. The purpose of this study is to investigate the relationship of $C_{a/}$ $C_{c}$ on marine clay near the southern sea in Korea. A series of incremental loading consolidation tests with measurement of pore water pressure were performed. It was found that the $C_{a/}$ $C_{c}$ of undisturbed marine clay is 0.0397. This value is similar to that proposed by Mesri and Castro(1987) on inorganic clay and silt. and silt. and silt.