Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Study on Growth of Nanocrystalline SiC Films Using TMS

TMS를 이용한 SiC 나노박막의 성장연구

  • Yang Jae-Woong (Dept. of Advanced Materials Science and Engineering, Daejin Univ.)
  • Published : 2005.08.01
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Abstract

Chemical vapor deposition technique has been used to grow epitaxial SiC thin films on Si wafers using tetramethylsilane(TMS) precursor. The films were observed to grow along (110) direction of 3C-SiC at $800^{\circ}C$. The quality of the films was significantly influenced by the TMS flow rate and growth temperature. Nanocrystal SiC films were grown at flow rates of TMS 10 sccm with $H_2$ carrier gas of 100 sccm. The temperature and gas pressure in the reactor have a great influence on the crystallinity and morphology of the SiC film grown. The growth mechanism of the SiC film on the Si substrate without the carbonization process was discussed based on the experimental results.

Keywords

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