• Title/Summary/Keyword: Buffer curve

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Application Load Duration Curve for Evaluation of Impaired Watershed at TMDL Unit Watershed in Korea (수질오염총량 단위유역의 유량조건별 수체 손상 평가를 위한 부하지속곡선 적용성 연구)

  • Hwang, Ha-Sun;Yoon, Chun-Gyeong;Kim, Ji-Tae
    • Journal of Korean Society on Water Environment
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    • v.26 no.6
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    • pp.903-909
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    • 2010
  • The purpose of this study was evaluated on the applicability of Load Duration Curve Method (LDC Method) using HSPF watershed model and sampling data for efficient TMDLs in Korea. The LDC Method was used for assessment pollutant characteristics in watershed and water quality variation in each water flow level. Load Duration Curve is applied for judge the level of impaired water-body and can be estimated the impaired level by pollutant, such as BOD, T-N, and T-P in this study depending on variation of stream flow. As a result, BOD, T-P was usually exceed the standard value at low flow and dry hydrologic period. Improvement of effluent concentration from WWTP and riparian buffer protection zone are effective to improve the water quality. T-N showed the worst condition at mid-range hydrologic period and moist hydrologic period. Therefore, soil erosion control program and BMPs for non-point source pollution control is effective for recovery the water quality, which can be useful method for management of water quality in the plan of recovery water quality spontaneously. Applicability of LDC Method was evaluated in the Nakbon A watershed. However, we need to consider more detailed and accumulated data set such as accurate GIS data and detail pollution data, and WWTP discharge water quality data for accurate evaluation of watershed. Overall, The LDC Method is adequate for evaluation of watersheds characteristics, and its application is recommended for watershed management and TMDL Implementation.

An Effective Training Pattern Processing Method for ATM Connection Admission Control Using the Neural Network (신경회로망을 이용한 ATM 연결 수락 제어를 위한 효율적인 학습패턴 처리 기법)

  • Kwon, Oh-Jun;Jeon, Hyoung-Goo;Kwon, Soon-Kak;Kim, Tai-Suk;Lee, Jeong-Bae
    • The KIPS Transactions:PartB
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    • v.9B no.2
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    • pp.173-180
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    • 2002
  • The virtual cell loss rate was introduced for the training pattern of the neural network in the VOB(Virtual Output Buffer) model. The VOB model shows that the neural network can find the connection admission boundary without the real cell loss rate. But the VOB model tends to overestimate the cell loss rate, so the utilization of network is low. In this paper, we uses the reference curve of the cell loss rate, which contains the information about the cell loss rate at the connection admission boundary. We process the patterns of the virtual cell loss rate using the reference curve, We performed the simulation with two major ATM traffic classes. One is On-Off traffic class that has the traffic characteristic of LAN data and other is Auto-Regressive traffic class that has the traffic characteristic of a video image communication.

Electrical Properties of V-I Curve of p-ZnO:Al/n-ZnO:Al Junction Fabricate by RF Magnetron Sputtering

  • Jin, Hu-Jie;So, Soon-Jin;Song, Min-Jong;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.408-409
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    • 2007
  • Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

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The Improvement of Convergence Characteristic using the New RLS Algorithm in Recycling Buffer Structures

  • Kim, Gwang-Jun;Kim, Chun-Suck
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.4
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    • pp.691-698
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    • 2003
  • We extend the sue of the method of least square to develop a recursive algorithm for the design of adaptive transversal filters such that, given the least-square estimate of this vector of the filter at iteration n-l, we may compute the updated estimate of this vector at iteration n upon the arrival of new data. We begin the development of the RLS algorithm by reviewing some basic relations that pertain to the method of least squares. Then, by exploiting a relation in matrix algebra known as the matrix inversion lemma, we develop the RLS algorithm. An important feature of the RLS algorithm is that it utilizes information contained in the input data, extending back to the instant of time when the algorithm is initiated. In this paper, we propose new tap weight updated RLS algorithm in adaptive transversal filter with data-recycling buffer structure. We prove that convergence speed of learning curve of RLS algorithm with data-recycling buffer is faster than it of exiting RLS algorithm to mean square error versus iteration number. Also the resulting rate of convergence is typically an order of magnitude faster than the simple LMS algorithm. We show that the number of desired sample is portion to increase to converge the specified value from the three dimension simulation result of mean square error according to the degree of channel amplitude distortion and data-recycle buffer number. This improvement of convergence character in performance, is achieved at the B times of convergence speed of mean square error increase in data recycle buffer number with new proposed RLS algorithm.

Evaluation of Available Soil Silicon Extracting Procedures for Oriental Melon (참외 시설재배 토양에 대한 유효규산 추출방법 비교)

  • Cho, Hyun-Jong;Choe, Hui-Yeol;Lee, Yong-Woo;Chung, Jong-Bae
    • Korean Journal of Soil Science and Fertilizer
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    • v.37 no.4
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    • pp.251-258
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    • 2004
  • Soil testing for silicon (Si) in the upland soils has not been sufficiently investigated. The objective of this study was to identify a suitable Si extraction method for upland soils of oriental melon (Cucumis melo L.). Thirty-eight surface soil samples and matured leaf samples were collected from plastic film houses in Sungju, Gyeongbuk province. In the laboratory, six different methods were used for extracting Si from the soils. The methods included 0.5 N HCl extraction, 1 N sodium acetate buffer (PH 4.0) extraction, citric acid 1% extraction, water extraction, Tiis buffer pH 7.0 extraction, and extraction after incubation with water for 1 week. The concentration of dissolved Si in soil extracts from all methods was determined colorimetrically. With 1 N sodium acetate buffer extraction, as the available soil Si increased, the concentration ofSi in oriental melon leaf increased until around $14g\;SiO_2\;kg^{-1}$ was reached in the form of a saturation curve. Also, among the methods studied, extraction with 1 N sodium acetate buffer was the only method provided a significant linear correlation with oriental melon leaf Si content in the range of extractable soil Si lower than the level which inducing Si saturation in oriental melon leaf. These results indicate that 1 N sodium acetate buffer extraction procedure is the best soil Si test method for upland soils of oriental melon. This sodium acetate buffer extraction procedure is rapid and quite well acquainted with scientists and farmers, since the method has been used for routine paddy soil testing.

Effect of Fluid Pressure on L-type $Ca^{2+}$ Current in Rat Ventricular Myocytes (백서 심실 근세포 L형 $Ca^{2+}$ 전류에 대한 유체압력의 효과)

  • Lee Sun-Woo;Woo Sun-Hee
    • YAKHAK HOEJI
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    • v.50 no.2
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    • pp.111-117
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    • 2006
  • Cardiac chambers serve as mechanosensory systems during the haemodynamic or mechanical disturbances. To examine a possible role of fluid pressure (FP) in the regulatien of atrial $Ca^{2+}$ signaling we investigated the effect of FP on L-type $Ca^{2+}$ current $(I_{Ca})$ in rat ventricular myocytes using whole-cell patch-clamp technique. FP $(\sim40cm\;H_2O)$ was applied to whole area of single myocytes with electronically controlled micro-jet system. FP suppressed the magnitude of peak $I_{Ca}$ by $\cong25\%$ at 0 mV without changing voltage dependence of the current-voltage relationship. FP significantly accelerated slow component in inactivation of $I_{Ca}$, but not its fast component. Analysis of steady-state inactivation curve revealed a reduction of the number of $Ca^{2+}$ channels available for activity in the presence of FP. Dialysis of myocytes with high concentration of immobile $Ca^{2+}$ buffer partially attenuated the FP-induced suppression of $I_{Ca}$. In addition, the intracellular $Ca^{2+}$ buttering abolished the FP-induced acceleration of slow component in $I_{Ca}$ inactivation. These results indicate that FP sup-presses $Ca^{2+}$ currents, in part, by increasing cytosolic $Ca^{2+}$ concentration.

Analysis of organic germanium, Ge-132 (유기게르마늄 화합물인 Ge-132의 분석법)

  • Park, Man Ki;Park, Jeong Hill;Han, Sang Beom;Park, Il Ho
    • Analytical Science and Technology
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    • v.8 no.3
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    • pp.371-374
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    • 1995
  • An organic germanium compound, Ge-132, was reported to have interferon inducer activity, anti-tumor activity and anti-viral activity. ICP, AA and colorimetry methods were used for the determination of germanium in Ge-132. However these methods have a problem that they only give an information on the total amount of germanium element, and consequently Ge-132 connot be distinguished form toxic inorganic Ge compounds. To overcome this problem, ion chromatography was used to analyze Ge-132. Ge-132 was separated on Ionpac AS4A column with 1.3mM $Na_2B_4O_7$ buffer(pH=9.2) solution as an eluent and detected by the conductivity detector. Correlation coefficient of the calibration curve was 0.999 and the detection limit measured at S/N ratio of 3 was 50pmol. This method was applicable to the analysis of Ge-132 raw material and Ge-132 preparations.

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Analysis of Submicron Gate GaAs MESFET's Characteristics Using Particle Model (입자모델을 이용한 서브마이크론 게이트 GaAs MESFET 특성의 해석)

  • 문승환;정학기;김봉렬
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.4
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    • pp.534-540
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    • 1990
  • In this paper the characteristics of submicron gate GaAs MESFET's have been studied using a particle model which takes into account the hot-electron transport phenomena, i.e., the velocity overshoot. \ulcornervalley(<000> direction), L valley (<111>direction), X valley (<100>direction) as the GaAs conduction energy band and optical phonon, acoustic phonon, equivalent intervalley, nonequivalent intervalley scattering as the scattering models, have been considered in this simulation. And the GaAs material and the device simulation have been done by determination of the free flight time, scattering mechanism and scattering angle according to Monte-Carlo algorithm which makes use of a particle model. As a result of the particle simulation, firstly the electron distribution, the potential energy distribution and the situation of electron displacement in 0.6 \ulcorner gate length device have been obtained. Secondly, the cutoff frequency, obtained by this method, is k47GHz which is in good agreement with the calculated result of theory. And the current-voltage characteristics curve which takes account of the buffer layer effect has been obtained. Lastly it has been verified that parasitic current at the buffer layer can be analyzed using channel depth modulation.

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Motion Control Algorithm Expanding Arithmetic Operation for Low-Cost Microprocessor (저가형 마이크로프로세서를 위한 연산처리 확장 모션제어 알고리즘)

  • Moon, Sang-Chan;Kim, Jae-Jun;Nam, Kyu-Min;Kim, Byoung-Soo;Lee, Soon-Geul
    • Journal of Institute of Control, Robotics and Systems
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    • v.18 no.12
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    • pp.1079-1085
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    • 2012
  • For precise motion control, S-curve velocity profile is generally used but it has disadvantage of relatively long calculation time for floating-point arithmetics. In this paper, we present a new generating method for velocity profile to reduce delay time of profile generation so that it overcomes such disadvantage and enhances the efficiency of precise motion control. In this approach, the velocity profile is designed based on the gamma correction expression that is generally used in image processing to obtain a smoother movement without any critical jerk. The proposed velocity profile is designed to support both T-curve and S-curve velocity profile. It can generate precise profile by adding an offset to the velocity profile with decimals under floating point that are not counted during gamma correction arithmetic operation. As a result, the operation time is saved and the efficiency is improved. The proposed method is compared with the existing method that generates velocity profile using ring buffer on a 8-bit low-cost MCU. The result shows that the proposed method has no delay in generating driving profile with good accuracy of each cycle velocity. The significance of the proposed method lies in reduction of the operation time without degrading the motion accuracy. Generated driving signal also shows to verify effectiveness of the proposed method.

Epitaxial growth of buffer layers for superconducting coated conductors (초전도 선재용 완충층의 결정성장 연구)

  • Chung, Kook-Chae;Yoo, Jai-Moo;Kim, Young-Kuk;Wang, X.L.;Dou, S.X.
    • Progress in Superconductivity and Cryogenics
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    • v.9 no.3
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    • pp.5-8
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    • 2007
  • All three buffer layers of $Y_2O_3$, YSZ, and $CeO_2$ have been deposited on the biaxially textured metal substrates using rf-sputtering method, The first 50-70nm thick $Y_2O_3$ films were grown epitaxially on biaxially textured metal substrates as a seed layer and followed by the diffusion barrier ${\sim}100nm$ thick YSZ and subsequent capping layer ${\sim}200nm$ thick $CeO_2$ deposited epitaxially on top of $Y_2O_3$ seed layer. The epitaxial orientation of all three layers were all (100) grown with rocking curve Full Width at Half Maximum(FWHM) of $4-5^{\circ}$ and in plane phi-scan FWHM of $6-8^{\circ}$ using X -ray diffraction analysis. The NiO phases formed during the $Y_2O_3$ seed layer deposition seem to degrade the crystallinity and roughen the surface morphology of the following layer observed by AFM(Atomic Force Microscopy). The buffered tapes were used as substrates for long length YBCO coated conductors with high critical current density $J_c$. The five multi-turn of metal tapes was employed to increase the thickness of films and production rate to compensate the low growth rate of rf-sputtering method.