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Epitaxial growth of buffer layers for superconducting coated conductors

초전도 선재용 완충층의 결정성장 연구

  • 정국채 (한국기계연구원 부설 재료연구소) ;
  • 유재무 (한국기계연구원 부설 재료연구소) ;
  • 김영국 (한국기계연구원 부설 재료연구소) ;
  • ;
  • Published : 2007.09.30

Abstract

All three buffer layers of $Y_2O_3$, YSZ, and $CeO_2$ have been deposited on the biaxially textured metal substrates using rf-sputtering method, The first 50-70nm thick $Y_2O_3$ films were grown epitaxially on biaxially textured metal substrates as a seed layer and followed by the diffusion barrier ${\sim}100nm$ thick YSZ and subsequent capping layer ${\sim}200nm$ thick $CeO_2$ deposited epitaxially on top of $Y_2O_3$ seed layer. The epitaxial orientation of all three layers were all (100) grown with rocking curve Full Width at Half Maximum(FWHM) of $4-5^{\circ}$ and in plane phi-scan FWHM of $6-8^{\circ}$ using X -ray diffraction analysis. The NiO phases formed during the $Y_2O_3$ seed layer deposition seem to degrade the crystallinity and roughen the surface morphology of the following layer observed by AFM(Atomic Force Microscopy). The buffered tapes were used as substrates for long length YBCO coated conductors with high critical current density $J_c$. The five multi-turn of metal tapes was employed to increase the thickness of films and production rate to compensate the low growth rate of rf-sputtering method.

Keywords

References

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