• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.8
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• pp.1572-1579
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• 2009

In this dissertation ultra-broadband power amplifier(UPA) was designed and fabricated using negative feedback technique. UPA was made of pre-amplifier, drive amplifier and power amplifier. Negative feedback technique was used to achieve ultra-broadband performance. Designed power amplifier has 30dB gain and 2W output power. The load-pull data of power amplifier for optimal power matching was extracted from the measured S-parameter. Fabricated PCB material, permittivity is 4.6 and thickness is 0.8mm, is FR4 and UPA was fabricated 3 modules for comparison of the simulated and measured results. Size of the fabricated pre-amplifier and drive amplifier module is 40mm'50mm'16mm. And from the experimental results, gain of the pre-amplifier module is 9.87dB at 2GHz and flatness is 0.63dB. Experimental result of the drive amplifier module is 10.97dB at 2GHz and flatness of that is 0.26dB. Test result of the power amplifier module is 10.71dB at 2GHz and flatness is 0.72dB. Total size of the power amplifier is 45mm'134mm'16mm. According to the test results, gain of the UPA is 28.98dB at 2GHz and flatness is 1.68dB. Output power was 32.098dBm at 2GHz, 32.154dBm at 1GHz and 31.273dBm at 100MHz.

• Journal of electromagnetic engineering and science
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• v.17 no.4
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• pp.221-227
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• 2017

A new approach to designing a broadband and highly efficient class-E power amplifier based on nonlinear shunt capacitance analysis is proposed. The nonlinear shunt capacitance method accurately extracts optimum class-E power amplifier parameters, including an external shunt capacitance and an output impedance, at different frequencies. The dependence of the former parameter on the frequency is considered to select an optimal value of external shunt capacitor. Then, upon determining the latter parameter, an output matching network is optimized to obtain the highest efficiency across the bandwidth of interest. An analytical approach is presented to design the broadband class-E power amplifier of a MOSFET transistor. The proposed method is experimentally verified by a 140-170 MHz class-E power amplifier design with maximum added power efficiency of 82% and output power of 34 dBm.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.2
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• pp.195-199
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• 2006

A wideband power amplifier for a frequency hopping radio unit is designed. To obtain higher efficiency, it is designed for the Class B mode overdrived. The broadband transformer and feedback circuits are adapted to obtain broadband characteristics. The designed amplifier is simulated using the ADS, which is a CAD software from HPEEsof, Simulation results of the designed amplifier are well suited for the design specifications. The designed amplifier are fabricated. Measured results of the fabricated amplifier well agreed with the simulation results and are in good agreement with the predicted performance.

• Journal of electromagnetic engineering and science
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• v.16 no.1
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• pp.52-56
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• 2016

This paper suggests a class-F power amplifier with split open-end stubs to provide a broadband high-efficiency operation. These stubs are designed to have wide bandwidth by splitting wide open-end stubs into narrower stubs connected in shunt in an output matching network for class-F operation. In contrast to conventional wideband class-F designs, which theoretically need a large number of matching lines, this method requires fewer transmission lines, resulting in a compact circuit implementation. In addition, the open-end stubs are designed with slant ends to achieve additional wide bandwidth. To verify the suggested design, a 10-W class-F power amplifier operating at 1.7 GHz was implemented using a commercial GaN transistor. The measurement results showed a peak drain efficiency of 82.1% and 750 MHz of bandwidth for an efficiency higher than 63%. Additionally, the maximum output power was 14.45 W at 1.7 GHz.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.19 no.3
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• pp.135-140
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• 2019

In this paper, a frequency split type broadband drive amplifier operating in the L, S and C bands was designed and fabricated. Transistor is difficult to efficiently use when the fractional bandwidth of the drive amplifier is more than 100%, In particular, the characteristics of the driving amplifier are important for operating the power amplifier in which the characteristics of the output power and the efficiency are sensitively changed according to the frequency band. A frequency split methods was applied to maximize the bandwidth of a drive amplifier and to divide the output of the drive amplifier into low band and high band so that the transistor of the power amplifier located at the rear of the drive amplifier can be efficiently used. The designed drive amplifier was fabricated in GaAs HBT technology and 9-layer SiP, and verified by the measurements. The fabricated drive amplifier shows a gain of more than 8 dB and an output power of more than 15 dBm in the operating frequency range.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.7
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• pp.1529-1533
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• 2005

In this paper designed available pre-amplifier to Intrabroadband power amplifier. Designed pre-amplifier used WJ company's AMI which frequency characteristic and noise characteristic are superior. Designed to have superior VSWR characteristic and frequency characteristic covering broadband of 100MHz ${\~}$ 3GHz using feedback. Designed ye-amp broadband special qualify such as EMC measurement equipment roll important position do to utilize to power amplifier of equipment that how consider.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.191-194
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• 1999

The balanced amplifier is a practical amplifier to, implement a broadband amplifier that has flat gain and good input and output VSWR. Three-stage amplifier design procedure usually divided into three partition satisfying the following requirements : low noise figure, high gain and high power output. FHX35LG HEMT device is used in the design can be obtained low noise figure at the first-stage, MGA82563 MMIC device is used in the design can be maintained high gain at the second-stage, and AHI MMIC device is used in the design can be required high power output at the third-stage. The results of three-stage balanced amplifier show that power gain is about 40㏈, noise figure is less than 1.2㏈ at operating frequency.

• Journal of electromagnetic engineering and science
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• v.16 no.3
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• pp.143-149
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• 2016

This work presents a method used for designing a broadband class-E power amplifier that combines the two techniques of a nonlinear shunt capacitance and a low quality factor of a series resonator. The nonlinear shunt capacitance theory accurately extracts the value of class-E components. In addition, the quality factor of the series resonator was considered to obtain a wide bandwidth for the power amplifiers. The purpose of using this method was to produce a simple topology and a high efficiency, which are two outstanding features of a class-E power amplifier. The experimental results show that a design was created using from a 130 to 180 MHz frequency with a bandwidth of 32% and a peak measured power added efficiency of 84.8%. This prototype uses an MRF282SR1 MOSFET transistor at a 3-W output power level. Furthermore, a summary of the experimental results compared with other high-efficiency articles is provided to validate the advantages of this method.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.5 no.1 s.9
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• pp.13-19
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• 2006

In this paper, a broadband Microwave Power Module(MPM) operating at 7 - 11 GHz is designed and fabricated. The MPM consists of a SSA (Solid State Amplifier) and a conventional TWT (traveling Wave Tube). This combined module takes advantage of a low noise and high gain of SSA. The computer modeling and simulation of the SSA are designed by the use of the ADS (Advanced Design System) software. The SSA is designed by configurating the CSSDA (Cascaded Single Stage Distributed Amplifier). The broadband MPM is measured to be noise figure 8.3 - 10.02 dB at 7 - 11 GHz bandwidth, output power of 38.12 dBm at 9 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.3C
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• pp.234-240
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• 2002

A power amplifier with AlGaAs/InGaAs/GaAs HBT's has been developed for customer premise equipments of the quasi millimeter-wave frequency-band broadband wireless local loop(BWLL) system. Parameters of the linear and nonlinear equivalent circuits for a common base HBT have been extracted by a fitting method. The amplifier has been designed through the linear and nonlinear circuit simulations and fabricated on a ceramic substrate for a hybrid IC. The amplifier has produced a 25.5-dBm output power with 35% power-added efficiency(PAE) at 24.4 GHz and achieved a 7.5-dB linear power gain at 24.8 GHz. In 24.25 ∼24.75 GHz band, the amplifier has exhibited a saturated output over larger than 22 dBm and PAE higher than 25%.