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Design and Fabrication of a HBT Power Amplifier for Quasi Millimeter-wave Broadband Wireless Local Loop Applications  

김창우 (경희대학교 전자정보학부)
채규성 (경희대학교 일반대학원 전파공학과)
Publication Information
The Journal of Korean Institute of Communications and Information Sciences / v.27, no.3C, 2002 , pp. 234-240 More about this Journal
Abstract
A power amplifier with AlGaAs/InGaAs/GaAs HBT's has been developed for customer premise equipments of the quasi millimeter-wave frequency-band broadband wireless local loop(BWLL) system. Parameters of the linear and nonlinear equivalent circuits for a common base HBT have been extracted by a fitting method. The amplifier has been designed through the linear and nonlinear circuit simulations and fabricated on a ceramic substrate for a hybrid IC. The amplifier has produced a 25.5-dBm output power with 35% power-added efficiency(PAE) at 24.4 GHz and achieved a 7.5-dB linear power gain at 24.8 GHz. In 24.25 ∼24.75 GHz band, the amplifier has exhibited a saturated output over larger than 22 dBm and PAE higher than 25%.
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Times Cited By KSCI : 1  (Citation Analysis)
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