A New Asymmetric SOI Device Structure for High Current Drivability and Suppression of Degradation in Source-Drain Breakdown Voltage (전류구동 능력 향상과 항복전압 감소를 줄이기 위한 새로운 비대칭 SOI 소자)
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- Proceedings of the IEEK Conference
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- 1999.06a
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- pp.918-921
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- 1999