• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.2
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• pp.131-136
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• 2011

This paper aims to examine the possibility of using an environmentally friendly $N_2$ as an alternative gas to $SF_6$. For this purpose, we have investigated breakdown characteristics of $N_2$ under impulse voltages in a quasi-uniform electric field gap. The 1.2/50[${\mu}s$] lightning impulse voltage, switching impulse voltages and oscillatory impulse voltages were applied at the test gap. The electric field utilization factor ranges from 0.5 to 0.8. The experimental data of $SF_6$ and $N_2$ acquired in the same experimental condition are presented in parallel for comparison. As a result, the breakdown voltages in $SF_6$ and $N_2$ are linearly increased with the gas pressure, also the breakdown voltages in $N_2$ are increased with increasing the gap distance and electric field utilization factor. The positive breakdown voltages are higher than the negative breakdown voltages. The nagative basic lightning impulse withstand level of 150[kV] in $N_2$ of about 0.5[MPa] is nearly equal to that in $SF_6$ of 0.15[MPa]. It is seen from the results obtained in this work that $N_2$ can be used as an eco-friendly alternative gas to $SF_6$ in distribution power equipment.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.38-43
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• 1998

An analytical model for the surface field distribution of the RESURF (reduced surface field)LD(lateral double-diffused) MOS is presented in terms of the doping concentration, the thickness of the n epi layer, the p substrate concentration, and the epi layer length. The reuslts are used to determine the breakdown voltage due to the surface field as a function of the epi layer length. The maximum breakdown voltage of the device is found to be that of the vertical n$^{+}$n$^{[-10]}$ p$^{[-10]}$ junction. Analytical results of the breakdown voltage vs. the epi layer length agree well with the numerical simulation results using MEDICI.I.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.54-58
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• 1999

We deposited diamond-like carbon (DLC) films using ion beam sputtering of a graphite target on flat substrates for use as a thin film field emitter. An n-type silicon wafer, titanium-coated silicon, and indium tin oxide (ITO) coated glass were used as a substrate. All films exhibited a sudden increase in the emission after a breakdown occurred at high voltage. The morphology of the films after the breakdown depended on the substrate. On ITO and Ti substrates, the DLC film peeled off upon breakdown, but on the Si substrate the surface melting due to breakdown resulted in the formation of various structures such as a sharp point, mound, and crater. By scanning the deformed surface with a tip anode, we found that the emission was concentrated at the deformed sites, indicating that the field enhancement due to the morphology change was responsible for the increased emission.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1081-1084
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• 1995

Internal voids located within an insulation will arise partial discharge that causes local breakdown and even the entire insulation breakdown. For HV apparatuses, it is usual case that several voids are formed within non-uniform electric field condition rather than single void within uniform field, which can be solved analitically. The purpose of this work is to study partial discharge and breakdown characteristics of an insulation according to the distribution pattern of two disc-type voids that are located within non-uniform field. The results from numerical field analysis and experiments show that the electric field within the voids decreases as they are arranged more serially, which accordingly results in the increase of partial discharge inception field(PDIF) much higher than that of single void model. With parallel arranged voids, PDIF is almost the same as that of single void model. On the other hand, AC breakdown strength decreases as voids are arranged more serially, which is a natural result considering the reduction of effective insulation thickness. For parallel voids, this effect cannot he noticed where as they show different pattern compared with single void and serial void models in $\Phi$-Q-N analysis. Considering these results may leads us to the conclusion that, in the evaluation of insulating products through PD test, it is not sufficient to determine only PDIV or existence of PD at predetermined voltage level. We could evaluate more accurately by considering all the available data such as PDIV, PD magnitude, PD occurring phase, number of PD pulses, and etc.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.276-281
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• 2012

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. Generally most of field effect concentrations shows on the edge of power devices. Can be improve the breakdown characteristic using edge termination technology. In this paper, considering the variables that affect the breakdown voltage and optimization of parameters result for 600 V Super Junction MOSFET Field ring.

• Proceedings of the KIEE Conference
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• 2004.05b
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• pp.105-108
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• 2004

This paper describes the influence of conducting particle in the coaxial cylindrical electrodes under alternating voltage condition investigated using breakdown electric field and electro magnetics simulation method. Simulated particle-location in GIS chamber were the particle on electrode, the particle on enclosure and free moving particle. As results, it was founded that in case of breakdown electric field of the GIS chamber, breakdown electric field of particle on electrode was the lowest, that of free moving particle was middle and that of particle on enclosure was the highest. And in case of the electric field analysis with particle locations, electric field of particle on electrode was the highest that of lifted particle was middle and that of particle on enclosure was the lowest. This results can offer a practical reference ra the insulation design of domestic GIS.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1072-1074
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• 1995

Zinc-Borosilicate is used as a side insulastor wall to make high breakdown voltage with one Field Limiting Ring in a p-n junction. It is known that surface charge can be yield at the interface of Zinc-Borosilicate Glass/Silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage improved more than 660V without using more FLR.

• Journal of the Korean institute of surface engineering
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• v.28 no.4
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• pp.236-242
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• 1995

This paper describes a study of electrical tree growth in DGEBA/MDA/SN system subjected to ac high electric field. The dielectric breakdown process, which consists of tree initiation, tree propagation and the complete puncture of the system was investigated. Dielectric breakdown always initiated from the needle tip where the electric field reinforcement is the highest. Higher temperature and voltage accelerated the tree growth and reduced the time to breakdown.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.10
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• pp.1426-1431
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• 2012

This paper analyzes re-degaussing performances of various breakdown conditions of degaussing coils in a ship to reduce underwater magnetic field anomaly due to the hull magnetization induced under the Earth's magnetic field. To achieve this, first, it is implemented to optimize degaussing coil currents by a magnetomotive force sensitivity formula combined with the coil effects. The re-degaussing processes are then executed when a breakdown occurs in degaussing coils, one by one. Finally, the re-degaussing performances are examined with the results of normal degaussing and coil breakdown conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1039-1044
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• 2000

Breakdown voltage model and expertiments are compared for discharge cells of AC plasma display panel. In the model, discharge paths are assumed to be initial electric field lines and the one-dimensional continuity equation is applied to the charged particle transport at each field line. The comparisons are performed in the wide range of gas pressure (50-600torr), Xe partial pressure over total pressure (1-6%), sustain electrode gap(100-1000$\mu\textrm{m}$), wall height(130, 300$\mu\textrm{m}$), and voltage pulse width(2-6${\mu}$s). The presented breakdown voltage model well agree with experiments in the above wide range. The increase of breakdown voltage with the decrease of the width(L) of protruding electrode is also described by the model.