• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1996.11a
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• pp.125-129
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• 1996

This study describes that electrical breakdown of liquid nitrogen which is influenced with bubble has been investigated as liquid nitrogen is used coolant of high temperature(T/sub c/) superconductivity. In order to investigate breakdown of liquid nitrogen, we formed electrode system of parallel and vertical configuration toward gravitutional direction. In case of changing with electrode configuration of equal electrode and gap spacing in uniform and nonuniform electric field bubble behavior is changed. In result of that, breakdown voltage is changed. Therefore, this study proved that electrode configuration must be formed the smallest existing probability of bubble between two electrodes in order to increase breakdown strength of liquid nitrogen at atmosphere pressure.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.164-169
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• 2002

This paper mainly discusses the hard breakdown of 2.2-nm-thick $SiO_2$ films. It is shown that the hard breakdown event of a 2.2-nm-thick $SiO_2$ film greatly depends on the applied electric field. It is strongly suggested that the local weak spots created by applying a low initial stress to a 2.2-nm-thick $SiO_2$film resist the onset of hard breakdown. In other words, it is anticipated that the stored electrostatic energy is fast dissipated by trap-assisted tunneling in 2.2-nm-thick $SiO_2$ film. Consequently, it is strongly suggested that 2.2-nm-thick $SiO_2$ films are intrinsically quite robust.

• 전자공학회논문지 IE
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• v.44 no.1
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• pp.10-14
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• 2007

Analytical expression for breakdown voltages of InP diodes is induced by employing the effective ionization coefficient extracted from ionization coefficients for electron and hole in InP. The analytical results for breakdown voltage are compared with numerical and experimental results for the doping concentration, $N_D=6\times10^{14}cm^{-3}\sim3\times10^{17}cm^{-3}$. The analytical results show good agreement with the numerical data. Good fits with the experimental results are found for the breakdown voltages within 10% in error at each doping concentration.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1999-2001
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• 2000

Impulse breakdown voltage characteristics of sulphur-hexafluoride/nitrogen ($SF_{6}-N_{2}$) mixtures were presented. The applied voltages were the positive and negative lightning impulse (1.2/44${\mu}s$) and oscillating impulse ($0.4{\mu}s$/2.08MHz) voltages. The predischarge current was observed to clarify the breakdown mechanism. The electrode system was consisted of plane to plane configuration with a needle-shaped protrusion whose length and diameter are 10mm and 1mm. The measurements were carried out at the gas pressure of mixtures up to 0.5MPa with nitrogen concentrations varying from 5 to 20%. The electrical breakdown in $SF_{6}-N_{2}$ mixtures develops with steplike pulses in leader mechanism. The minimum breakdown voltages for the negative lightning and oscillating impulse voltages were higher than those for the positive.

• Transactions on Electrical and Electronic Materials
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• v.13 no.3
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• pp.149-152
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• 2012

The effects of amino silane coupling agent on the AC electrical treeing and breakdown behaviors in an epoxy/layered silicate (1 wt%) were examined in needle-plate electrode geometry. A layered silicate was exfoliated in an epoxy base resin by using our AC electric field apparatus. To measure the tree initiation and propagation and the breakdown rate, an alternating current (AC) of 10 kV (60 Hz) was applied to the specimen in needle-plate electrode arrangement with a $30^{\circ}C$ insulating oil bath. In the epoxy/amino silane system, the tree initiation time was 11.5 times higher and the breakdown time was 17.9 times higher than those of the neat epoxy resin. The tree initiation time in the epoxy/layered silicate (1 wt%) system with the amino silane was 2.0 times higher, and the breakdown time was 1.5 times higher than those of the epoxy/layered silicate (1 wt%) system.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1455-1456
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• 2007

This paper presents the experimental results on impulse breakdown characteristics under a highly non-uniform electric field in $SF_{6}/N_{2}$ gas mixtures according to a change in temperature. Test temperature ranges from $-25^{\circ}C$ to $25^{\circ}C$. The impulse predischarge breakdown developments are investigated by the measurements of current pulse and discharge luminous events. As a result, the predischarge development mechanisms for both positive and negative polarities are same. When increasing the temperature, breakdown voltage due to lightning impulse voltage is increased in negative polarity. On the other hand, when increasing the temperature, breakdown voltage due to lightning impulse voltage is not changed in positive polarity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.149-150
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• 2005

Thyristor breakdown voltage variation acceleration aging test was investigated. The breakdown voltage was deceased after 1000 hours acceleration aging test. It temperature rising caused by electric field concentration at the edge beveling region of the thyristor was confirmed using Silvaco device simulation. The local temperature rising is driving force for the defect propagation. Consequently, propagated defects of the beveling region seems to decrease thyristor's breakdown voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.306-309
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• 1995

This paper describes the dielectric characteristics of $SF_{6}$ gas in a non-uniform electric field under overvoltages. The breakdown voltage-time characteristics and the breakdown voltage-gas pressure characteristics are measured within a gas pressure range extending from 0.1 to 0.5 [Mpa] for the plane electrode system with a needle-shaped protrusion. The curvature radius of the needle protrusion is 0.5[mm]. Also, the growth process of the predischarge are simultaneously observed. As a result, it is found that the breakdown mechanism and predischarge phenomena are closely associated with the polarity and waveforms of the testing voltage.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.343-346
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• 1998

Ultra-thin gate oxide in MOS devices are subjected to high-field stress during device operation, which degrades the oxide and exentually causes dielectric breakdown. In this paper, we investigate the electrical properties of ultra-thin nitrided oxide (NO) and reoxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. We study vriations of I-V characteristics due to F-N tunneling, and time-dependent dielectric breakdown (TDDB) of thin layer NO and ONO depending on nitridation and reoxidation condition, and compare with thermal $SiO_{2}$. From the measurement results, we find that these NO and ONO thin films are strongly depending on its condition and that optimized reoxided nitrided oxides (ONO) films show superior dielectric characteristics, and breakdown-to-change ( $Q_{bd}$ ) performance over the NO films, while maintaining a similar electric field dependence compared to NO layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.83-87
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• 2020

In this letter, we propose and analyze a new asymmetric structure that can be used for next-generation power semiconductor devices. We compare and analyze the electrical characteristics of the proposed device with respect to those of symmetric devices. The proposed device has a p-emitter on the right side of the cell. The peak electric field is reduced by the shielding effect caused by the p-emitter structure. Consequently, the breakdown voltage is increased. The proposed asymmetric structure has an approximately 100% higher Baliga's figure of merit (~94.22 MW/㎠) than the symmetric structure (~46.93 MW/㎠), and the breakdown voltage of the device increases by approximately 70%.