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Analytical Model for Breakdown Voltages of InP Diodes  

Chung, Yong-Sung (Dept. of Fancy Toy Design, Sorabol College)
Publication Information
전자공학회논문지 IE / v.44, no.1, 2007 , pp. 10-14 More about this Journal
Abstract
Analytical expression for breakdown voltages of InP diodes is induced by employing the effective ionization coefficient extracted from ionization coefficients for electron and hole in InP. The analytical results for breakdown voltage are compared with numerical and experimental results for the doping concentration, $N_D=6\times10^{14}cm^{-3}\sim3\times10^{17}cm^{-3}$. The analytical results show good agreement with the numerical data. Good fits with the experimental results are found for the breakdown voltages within 10% in error at each doping concentration.
Keywords
InP; Effective ionization coefficient; Depletion width; Critical electric field; Breakdown voltages;
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