• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1992-1994
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• 2005

In this study, Bragg reflector was formed as tungsten(W) and $SiO_2$ deposited by RF magnetron sputtering according to variable conditions of RF power and working pressure to apply to the SMR type FBAR device, one of the next generation mobile communication devices. The micro-structural properties such as a crystal orientation, roughness and micro- structure were measured by XRD, AFM and SEM and the best condition of Bragg reflector was elicited with analyzing that results of the thin films about each conditions. Finally, FBAR device was fabricated with applying the Bragg reflector was formed on the best condition and measured the resonance properties and compared other research and considered it.

• Journal of Integrative Natural Science
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• v.4 no.3
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• pp.192-196
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• 2011

New method to encode multiple photonic features of Bragg type reflector on silicon wafer has been investigated. Multiple bit encodes of distributed Bragg reflector features have been prepared by electrochemical etching of crystalline silicon by using various square wave current densities. Optical characterization of multi-encoding of distributed Bragg reflectors on porous silicon was achieved by Ocean optics 2000 spectrometer for the search of possible applications of multiple bit encoding of distributed Bragg reflectors such as multiplexed assays and chemical sensors. The morphology and cross-sectional structure of multi-encoded distributed Bragg reflectors was investigated by field emission scanning electron micrograph.

• Korean Journal of Optics and Photonics
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• v.28 no.5
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• pp.229-235
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• 2017

A widely tunable U-shaped SGDBR (Sampled Grating Distributed Bragg Reflector) laser diode is designed and analyzed by means of a time-domain simulation. The U-shaped SGDBR laser diode consists of SGDBR, active, phase, and TIR (Total Internal Reflection) mirror sections, so the coupling losses across the sections should be carefully considered. The tuning range of the designed U-shaped SGDBR laser is about 1525-1570 nm, which is confirmed by the simulation. The simulation results show that the loss in the TIR mirror region should be less than about 2 dB, and the refractive-index difference at the butt coupling between the passive and active regions should be less than 0.1, to provide the complete tuning range.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.2
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• pp.241-246
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• 2021

In this paper, hydrogenated amorphous silicon(a-Si:H) grating coupler with distributed Bragg reflector(DBR) is proposed to achieve high-efficiency nanophotonic radiator for Light Detection and Ranging(LiDAR) application. The DBR reduces downward leakage of the optical field below the grating region. As a result, the far-field intensity shows about 1.4 times stronger, compared to the common grating coupler without the DBR.

• Journal of the Optical Society of Korea
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• v.15 no.2
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• pp.118-123
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• 2011

A novel triangular-shaped plasmonic metal-insulator-metal (MIM) Bragg grating waveguide is introduced, whose band-gap is narrower than that of the conventional step type and wider than that of the sawtoothshaped one. Moreover apodized triangular-shaped MIM Bragg grating structures are proposed in order to reduce the side lobes of the transmission spectrum, because the Bragg reflector with a sawtooth profile has a smoother transmission spectrum than that of a triangular-shaped one. The performance of the proposed structures is simulated by using the finite difference time domain method.

• Journal of Biosystems Engineering
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• v.34 no.4
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• pp.260-268
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• 2009

As a basic study to develop a high sensitive biosensor using film bulk acoustic resonator, the mathematical model for analyzing the resonance characteristics of bulk acoustic resonator with acoustic Bragg reflectors was investigated. The simulation results due to the number of acoustic Bragg reflectors with low and high acoustic impedance materials were compared with the experimental results for 1, 2.25 and 5 MHz of PZT based bulk acoustic resonators with various acoustic Bragg reflectors. At the fabricated bulk acoustic resonator with an odd number of acoustic Bragg reflectors, low and high acoustic impedance materials in sequence under the bottom electrode showed better resonance characteristics than even number of acoustic Bragg reflectors. The changes of resonance frequencies due to the increase of number of acoustic Bragg reflectors by simulation and experiment, respectively showed approximately similar tendency but some differences in input impedance between the experiment and simulation were found. The derived mathematical model for describing the resonance characteristics of the bulk acoustic resonator with acoustic Bragg reflector will be available for analyzing the design parameters for development of biosensor using bulk acoustic resonator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.16-20
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• 2004

We present the fabrication and performance of wavelength tunable butt coupled (BT) sampled-grating (SG) distributed bragg reflector (DBR) - planar buried heterostructure (PBH) laser diodes (LD). The fabricated LD showed the high optical output power due to the high coupling efficiency between active and passive components by the BT coupling methods. The series resistance and diode ideality factor of LD were measured to be 3.7 $\Omega$ and 1.35, respectively. The average threshold current was 25 ㎃. The output powers of BT-SG DBR-PBH-LD were obtained to be as high as 12.3 and 24.56 ㎽ at 100 and 200 ㎃, respectively. The maximum wavelength tuning range was about 31 nm and the side mode suppression ratio was about 37 dB.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.6
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• pp.293-297
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• 2009

In this paper, we made three kinds of porous silicon samples (single layer, distributed Bragg reflector, and microcavity) by electrochemical etching p-type silicon substrate. And then, we investigated their reflectance spectrum properties. We found that the number of fringe patterns and the maximum reflectivity of porous silicon multilayer increased compared with a porous silicon sinlge layer. In addition, we can observe that the DBR (distributed Bragg reflector) porous silicon has a full-width at half-maximum about 33 nm which is narrower than the porous silicon single layer and porous silicon microcavity.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.371-375
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• 2005

In this paper, the resonance characteristics of ZnO-based FBAR devices are compared. Several FBAR device samples were fabricated by using three different annealing methods while one sample remained non-annealed as a reference for comparison. Resonance characteristics could be significantly improved by both Bragg reflector-annealing and/or post-annealing steps. Especially, the use of two-step annealings resulted in most desirable resonance characteristic improvement compared with the Bragg reflector-annealing or post-annealing step alone.

• Journal of information and communication convergence engineering
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• v.3 no.1
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• pp.23-27
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• 2005

In this paper, the effects of various annealing conditions on the resonance characteristics of ZnO-based FBAR devices are compared. Several FBAR device samples were fabricated by using three different annealing methods while one sample remained non-annealed as a reference for comparison. Return loss ($S_11$) could be significantly improved by both Bragg reflector-annealing and/or post-annealing. Especially, the use of the combined annealings resulted in most desirable resonance improvement compared with the Bragg reflector-annealing or post-annealing method alone.