• Journal of Technologic Dentistry
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• v.31 no.4
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• pp.15-23
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• 2009

The aim of this study was to evaluate the bond strength of using a Au bonding agent applied on cp-Ti and nonprecious metal-gold-ceramic system. Metallic frameworks(diameter: 5mm, height: 20mm)(N=56, n=7per group) cast in Ni-Cr alloy, Co-Cr alloy and cp-Ti were obtained using acrylic templates and airborne particle abraded with $110{\mu}m$ aluminum oxide. Au bonding agent was applied on wash opaque firing as intermediate layer. SEM and SEM/EDS line profile were performed on the cutting the cross-section of the metal substrate-porcelain with intermediate Au coating. Groups were tested using shear bond strength(SBS) testing at 0.5mm/min. The mean SBS values for the ceramic-Au layer-metal combination were significantly higher than those ceramic-metal combination. While ceramic-Au layer-cp-Ti combinations failed to increase bond strength instead of using a titanium bonding porcelain. The appication of using Au intermediate layer significantly improve the bond strength combination with metal-ceramic system.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.6
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• pp.764-769
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• 2014

This paper describes sheath voltage limiter(SVL) transient characteristics by switching overvoltage considering single point bonding in underground transmission cables. The crossbonding system is generally used for grounding methods of underground transmission system. However, the single point bonding system is used in selective area which is difficult to consist of crossbonding major section. The sheath voltage limiters are connected between joints in the single point bonding. Specially, the high overvoltage might be generated in that section as well as the aging of sheath voltage limiter might be progressed by various electrical stress including lightning overvoltage, switching overvoltage and power frequency overvoltage. Therefore, in this paper, the switching overvoltage characteristics in underground cables are firstly analysed using EMTP simulation. Then, the switching overvoltage of sheath voltage limiter is also studied in single point bonding. Finally, the reduction method of sheath voltage limiter switching overvoltage is proposed by various simulation studies including circuit breaker operating order.

• Restorative Dentistry and Endodontics
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• v.8 no.1
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• pp.107-113
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• 1982

The purpose of this study was to observe the tensile strength of composite resins to etched dentin surface with the various methods of placing bonding agent before composite resin or placing composite resin alone. Recently extracted 60 maxillary incisors were chosen. These were divided into 6 groups: Group I : Immediate Silar adaptation to the etched dentin surface with 37% phosphoric acid for 60 seconds without bonding agent. Group II : Immediate Silar adaptation to the etched dentin surface with 37% phosphoric acid for 60 seconds with bonding agent. Group III : Silar adaptation to the etched dentin surface with 37% phosphoric acid for 60 seconds after 5 minutes of bonding agent. Group IV : Immediate Enamelite adaptation to the etched dentin surfaces with 50% phosphoric acid for 120 seconds without bonding agent. Group V : Immediate Enamelite adaptation to the etched dentin surface with 50% phosphoric acid for 120 second s with bonding again. Group VI : Enamelite adaptation to the etched dentin surface with 50% phosphoric acid for 120 seconds after 5 minutes of bonding agent. All specimens were immersed in water at $37^{\circ}C$ for 24 hours before testing. The results were as follows: 1. The tensile strength of powder/liquid composite resin system was higher than that of pastel paste composite resin system. 2. The tensile strength of the composite resin group II, III, V, & VI with bonding agent was higher than that of the composite resin group I & IV without bonding agent. 3. The tensile strength of the composite resin group III & VI after 5 minutes added to bonding agent was higher than that of the composite resin group II & V immediately added to bonding agent.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.171-176
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• 2021

Die-to-wafer (D2W) hybrid bonding in the multilayer semiconductor manufacturing process is one of wafer direct bonding, and various studies are being conducted around the world. A noteworthy point in the current die-to-wafer process is that a lot of voids occur on the bonding surface of the die during bonding. In this study, as a suggested method for removing voids generated during the D2W hybrid bonding process, a flexible mechanism for implementing convex for die bonding to be applied to the bond head is proposed. In addition, modeling of flexible mechanisms, analysis/design/control/evaluation of static/dynamics properties are performed. The proposed system was controlled by capacitive sensor (lion precision, CPL 290), piezo actuator (P-888,91), and dSpace. This flexure mechanism implemented a working range of 200 ㎛, resolution(3σ) of 7.276nm, Inposition(3σ) of 3.503nm, settling time(2%) of 500.133ms by applying a reverse bridge type mechanism and leaf spring guide, and at the same time realized a maximum step difference of 6 ㎛ between die edge and center. The results of this study are applied to the D2W hybrid bonding process and are expected to bring about an effect of increasing semiconductor yield through void removal. In addition, it is expected that it can be utilized as a system that meets the convex variable amount required for each device by adjusting the elongation amount of the piezo actuator coupled to the flexible mechanism in a precise unit.

• 제어로봇시스템학회:학술대회논문집
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• 1988.10a
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• pp.353-359
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• 1988

In this paper, the design and implementation of a multi-processor based die bonder machine for the semiconductor will be described. This is a final research results carried out for two years from June, 1986 to July, 1988. The mechanical system consists of three subsystems such as bonding head module, wafer feeding module, and lead frame feeding module. The overall control system consists of the following three subsystems each of which employs a 16 bit microprocessor MC 68000 : (i) supervisory control system, (ii) visual recognition / inspection system and (iii) the display system. Specifically, the supervisory control system supervises the whole sequence of die bonder machine, performs a self-diagnostics while it controls the bonding head module according to the prespecified bonding cycle. The vision system recognizes the die to inspect the die quality and deviation / orientation of a die with respect to a reference position, while it controls the wafer feeding module. Finally, the display system performs a character display, image display ans various error messages to communicate with operator. Lead frame feeding module is controlled by this subsystem. It is reported that the proposed control system were applied to an engineering sample and tested in real-time, and the results are sucessful as an engineering sample phase.

• The Journal of the Korean dental association
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• v.54 no.10
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• pp.780-788
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• 2016

Dentin bonding systems are unique dental materials which are rapidly evolute and essential materials for bonding of restorative materials to dentin. Now, 4th generation, 5th generation, 6th generation and 7th generation of dentin bonding systems are used in clinic. We investigated the frequency, motivation of choosing dentin bonding systems and satisfaction of them by survey in 2014. 5th generation of dentin bonding systems are mostly used in Korea and young dentist have tendency to choose newly developed dentin bonding systems.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.3 s.96
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• pp.78-83
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• 1999

The bonding interface is dependent on the properties of surfaces prior to SDB(silicon wafer direct bonding). In this paper, we prepared silicon surfaces in several chemical solutions, and annealed bonding wafers which were combined with thermally oxidized wafers and bare silicon wafers in the temperature range of $600{\times}1000^{\circ}C$. After bonding, the bonding interface is investigated by an infrared(IR) topography system which uses the penetrability of infrared through silicon wafer. Using this procedure, we observed intrinsic bubbles at elevated temperatures. So, we verified that these bubbles are related to cleaning and drying conditions, and the interface oxides on silicon wafer reduce the formation of intrinsic bubbles.

• The korean journal of orthodontics
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• v.5 no.1
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• pp.64-68
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• 1975

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.9-17
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• 2017

In these days, MEMS (micro-electro-mechanical system) devices become the crucial sensor components in mobile devices, automobiles and several electronic consumer products. For MEMS devices, the packaging determines the performance, reliability, long-term stability and the total cost of the MEMS devices. Therefore, the packaging technology becomes a key issue for successful commercialization of MEMS devices. As the IoT and wearable devices are emerged as a future technology, the importance of the MEMS sensor keeps increasing. However, MEMS devices should meet several requirements such as ultra-miniaturization, low-power, low-cost as well as high performances and reliability. To meet those requirements, several innovative technologies are under development such as integration of MEMS and IC chip, TSV(through-silicon-via) technology and CMOS compatible MEMS fabrication. It is clear that MEMS packaging will be key technology in future MEMS. In this paper, we reviewed the recent development trends of the MEMS packaging. In particular, we discussed and reviewed the recent technology trends of the MEMS bonding technology, such as low temperature bonding, eutectic bonding and thermo-compression bonding.

• Journal of Welding and Joining
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• v.29 no.1
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• pp.52-58
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• 2011

In this paper, the direct bonding process between FPCB and HPCB was studied. By using an ultrasonic horn which is mounted on the ultrasonic bonding machine, it is alternatively possible to bond the gold pads attached on the FPCB and HPCB at room temperature without an adhesive like ACA or NCA. The process condition for obtaining more bonding strength than 0.6 Kgf, which is commercially required, was carried out as 40 kHz of frequency, 0.6 MPa of bonding pressure and 2 second of bonding time. The peel off test was performed for evaluating bonding strength which results in more than 0.8 Kgf.