• 대한기계학회논문집A
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• 제26권6호
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• pp.1187-1193
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• 2002

Anodic bonding process has been quantitatively evaluated based on the Taguchi analysis of the interfacial fracture toughness, measured at the interface of anodically bonded silicon-glass bimorphs. A new test specimen with a pre-inserted blade has been devised for interfacial fracture toughness measurement. A set of 81 different anodic bonding conditions has been generated based on the three different conditions for four different process parameters of bonding load, bonding temperature, anodic voltage and voltage supply time. Taguchi method has been used to reduce the number of experiments required for the bonding strength evaluation, thus obtaining nine independent cases out of the 81 possible combinations. The interfacial fracture toughness has been measured for the nine cases in the range of 0.03∼6.12 J/㎡. Among the four process parameters, the bonding temperature causes the most dominant influence to the bonding strength with the influence factor of 67.7%. The influence factors of other process parameters, such as anodic voltage and voltage supply time, bonding load, are evaluated as 18%, 12% and 2.3%, respectively. The maximum bonding strength of 7.23 J/㎡ has been achieved at the bonding temperature of 460$\^{C}$ with the bonding load of 45gf/㎠, the applied voltage of 600v and the voltage supply time of 25minites.

• 마이크로전자및패키징학회지
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• 제27권1호
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• pp.17-24
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• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.

• 한국정밀공학회지
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• 제27권7호
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• pp.28-35
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• 2010

In the display industry, COG bonding method is being applied to production of LCD panels that are used for mobile phones and monitors, and is one of the mounting methods optimized to compete with the trend of ultra small, ultra thin and low cost of display. In COG bonding process, electrical characteristics such as contact resistance, insulation property, etc and mechanical characteristics such as bonding strength, etc depend on properties of conductive particles and epoxy resin along with ACF materials used for COG by manufacturers. As the properties of such materials have close relation to optimization of bonding conditions such as temperature, pressure, time, etc in COG bonding process, it is requested to carry out an in-depth study on characteristics of COG bonding, based on which development of bonding process equipment shall be processed. In this study were analyzed the characteristics of COG bonding process, performed the analysis and reliability evaluation on electrical and mechanical characteristics of COG bonding using ACF to find optimum bonding conditions for ACF, and performed the experiment on bonding characteristics regarding fine pitch to understand the affection on finer pitch in COG bonding. It was found that it is difficult to find optimum conditions because it is more difficult to perform alignment as the pitch becomes finer, but only if alignment has been made, it becomes similar to optimum conditions in general COG bonding regardless of pitch intervals.

• 한국정밀공학회지
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• 제29권5호
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• pp.563-571
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• 2012

In 3D integration package using TSV technology, bonding is the core technology for stacking and interconnecting the chips or wafers. During bonding process, however, warpage and high stress are introduced, and will lead to the misalignment problem between two chips being bonded and failure of the chips. In this paper, a finite element approach is used to predict the warpages and stresses during the bonding process. In particular, in-plane deformation which directly affects the bonding misalignment is closely analyzed. Three types of bonding technology, which are Sn-Ag solder bonding, Cu-Cu direct bonding and SiO2 direct bonding, are compared. Numerical analysis indicates that warpage and stress are accumulated and become larger for each bonding step. In-plane deformation is much larger than out-of-plane deformation during bonding process. Cu-Cu bonding shows the largest warpage, while SiO2 direct bonding shows the smallest warpage. For stress, Sn-Ag solder bonding shows the largest stress, while Cu-Cu bonding shows the smallest. The stress is mainly concentrated at the interface between the via hole and silicon chip or via hole and bonding area. Misalignment induced during Cu-Cu and Sn-Ag solder bonding is equal to or larger than the size of via diameter, therefore should be reduced by lowering bonding temperature and proper selection of package materials.

• 제어로봇시스템학회논문지
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• 제14권6호
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• pp.543-547
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• 2008

In the paper, we develop the ultrasonic bonding technique for LCD driver chips having small size and high pin-density. In general, the mounting technology for LCD driver ICs is a thermo-compression method utilizing the ACF (An-isotropic Conductive Film). The major drawback of the conventional approach is the long process time. It will be shown that the conventional ACF method based on thermo-compression can be remarkably enhanced by employing the ultrasonic bonding technique in terms of bonding time. The proposed approach is to apply the ultrasonic energy together with the thermo-compression methodology for the ACF bonding process. To this end, we design a bonding head that enables pre-heating, pressure and ultrasonic excitation. Through the bonding experiments mainly with LCD driver ICs, we present the procedures to select the best combination of process parameters with analysis. We investigate the effects of bonding pressure, bonding time, pre-heating temperature before bonding, and the power level of ultrasonic energy. The addition of ultrasonic excitation to the thermo-compression method reduces the pre-heating temperature and the bonding process time while keeping the quality bonding between the LCD pad and the driver IC. The proposed concept will be verified and demonstrated with experimental results.

• 소성∙가공
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• 제28권1호
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• pp.15-20
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• 2019

The superplastic forming/diffusion bonding process has been developed to fabricate a core frame structure with joint nodes out of tubes, for the development of a titanium high performance bicycle. The hydroforming process has been applied for bulging of a tube in the superplastic condition before, and during the diffusion bonding process. In this experiment, a commercial Ti-3Al-2.5V tube was selected as raw material for the study. The forming experiment has been performed using a servo-hydraulic press with a capacity of 200 ton. Next, nitrogen gas was used to acquire necessary pressure for the bulging and bonding of the tubes to fabricate the joint nodes. The pertinent processing temperature was $870^{\circ}C$ for the superplastic hydroforming/diffusion bonding (SHF/DB) process, using the Ti-3Al-2.5V tube. The bonding quality and the progress of bulging and diffusion bonding have been observed by the investigation of the joining interfaces at the cross section of the joint structure. The control of the nitrogen pressure throughout the SHF/DB process, was an important factor to avoid any significant defects in the joint structure. The whole progress stage of the diffusion bonding could be observed at a joint interface. A core structure with 5 joint nodes to manufacture a titanium bicycle could be obtained in a SHF/DB process.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.798-802
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• 2002

Metallurgical studies on the bonded interlayer of directionally solidified Ni-base superalloy GTD111 joints were carried out during transient liquid phase bonding. The formation mechanism of solid during solidification process was also investigated. Microstructures at the bonded interlayer of joints were characterized with bonding temperature. In the bonding process held at 1403K, liquid insert metal was eliminated by well known mechanism of isothermal solidification process and formation of the solid from the liquid at the bonded interlayer were achieved by epitaxial growth. In addition, grain boundary formed at bonded interlayer is consistent with those of base metal. However, in the bonding process held at 1453K, extensive formation of the liquid phase was found to have taken place along dendrite boundaries and grain boundaries adjacent to bonded interlayer. Liquid phases were also observed at grain boundaries far from the bonding interface. This phenomenon results in liquation of grain boundaries. With prolonged holding, liquid phases decreased gradually and changed to isolated granules, but did not disappeared after holding for 7.2ks at 1473K. This isothermal solidification occurs by diffusion of Ti to be result in liquation. In addition, grain boundaries formed at bonded interlayer were corresponded with those of base metal. In the GTD-ll1 alloy, bonding mechanism differs with bonding temperature.

• 마이크로전자및패키징학회지
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• 제28권2호
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• pp.65-70
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• 2021

본 연구에서는 레이저 접합 공정을 이용하여 flame retardant-4 (FR-4) 인쇄회로기판 (printed circuit board, PCB)의 organic solderability preservative (OSP) 표면처리 된 Cu pad와 전자부품을 Sn-57Bi-1Ag 저온 솔더 페이스트로 접합을 한 후 접합부의 계면 특성과 기계적 특성에 대하여 보고 하였다. 레이저 접합 공정은 레이저 파워 및 시간 등을 다르게 진행하여 접합 공정 조건이 접합부의 계면 및 기계적 특성에 미치는 영향을 살펴보았다. 레이저 접합 공정의 산업적 적용을 위하여 산업적으로 많이 이용되고 있는 리플로우 접합 공정을 이용한 접합부의 특성과도 비교 하였다. 레이저 접합 공정 적용 결과 2, 3 s의 짧은 공정 시간에도 계면에 Cu₆Sn₅ 금속간화합물 (intermetallic compound, IMC)를 생성하여 접합부를 안정적으로 형성함을 확인 하였다. 또한, 리플로우 공정과 비교해 보았을 때 레이저 접합 공정을 적용할 경우 접합부의 보이드 형성이 억제됨을 확인할 수 있었으며 접합부의 전단강도도 리플로우 공정 접합부보다 높은 기계적 강도를 나타냈다. 따라서, 레이저 접합 공정을 적용할 경우 짧은 접합 공정 시간에도 불구하고 안정적인 접합부 형성 및 높은 기계적 강도를 확보할 수 있는 것으로 기대된다.

• 마이크로전자및패키징학회지
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• 제20권2호
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• pp.11-15
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• 2013

The wafer bonding process becomes a flexible approach to material and device integration. The bonding strength in 3-dimensional process is crucial factor in various interface bonding process such as silicon to silicon, silicon to metals such as oxides to adhesive intermediates. A measurement method of bonding strength was proposed by utilizing AFM applied CNT probe tip which indicated the relative simplicity in preparation of sample and to have merit capable to measure regardless type of films. Also, New Tool was utilized to measure of tip radius. The cleaned $SiO_2$-Si bonding strength of SPFM indicated 0.089 $J/m^2$, and the cleaning result by RCA 1($NH_4OH:H_2O:H_2O_2$) measured 0.044 $J/m^2$, indicated negligible tolerance which verified the possibility capable to measure accurate bonding strength. And it could be confirmed the effective bonding is possible through SPFM cleaning.

• 한국정밀공학회지
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• 제27권12호
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• pp.84-91
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• 2010

The bonding process of LCD panel is attaching an inner lead to an outer lead in the production line of LCD panel module. It is composed of an OLB process and a PCB bonding process. Since bonding tool assembly is one of the core parts of the bonding equipment that determines the durability and performance of the final product, much design efforts to enhance uniformity and efficiency of the process have been made. In this paper, FE analyses have been employed to determine the bonding tool size. Bonding tool of long bar shape has been simplified as a piece with same heater pitch, and appropriate boundary conditions such as convection and radiation are considered. Thermal analysis results by the FEM have been validated by the experiments. With the use of FE analysis varies design parameters and the corresponding effects have been evaluated. It was observed that the approach presented in this paper could be employed for the design of LCD module bonding tool.