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http://dx.doi.org/10.3795/KSME-A.2002.26.6.1187

Measurement of Glass-Silicon Interfacial fracture Toughness and Experimental Evaluation of Anodic Bonding Process based on the Taguchi Method  

Kang, Tae-Goo (한국과학기술원 디지털나노구동연구단)
Cho, Young-Ho (한국과학기술원 디지털나노구동연구단)
Publication Information
Transactions of the Korean Society of Mechanical Engineers A / v.26, no.6, 2002 , pp. 1187-1193 More about this Journal
Abstract
Anodic bonding process has been quantitatively evaluated based on the Taguchi analysis of the interfacial fracture toughness, measured at the interface of anodically bonded silicon-glass bimorphs. A new test specimen with a pre-inserted blade has been devised for interfacial fracture toughness measurement. A set of 81 different anodic bonding conditions has been generated based on the three different conditions for four different process parameters of bonding load, bonding temperature, anodic voltage and voltage supply time. Taguchi method has been used to reduce the number of experiments required for the bonding strength evaluation, thus obtaining nine independent cases out of the 81 possible combinations. The interfacial fracture toughness has been measured for the nine cases in the range of 0.03∼6.12 J/㎡. Among the four process parameters, the bonding temperature causes the most dominant influence to the bonding strength with the influence factor of 67.7%. The influence factors of other process parameters, such as anodic voltage and voltage supply time, bonding load, are evaluated as 18%, 12% and 2.3%, respectively. The maximum bonding strength of 7.23 J/㎡ has been achieved at the bonding temperature of 460$\^{C}$ with the bonding load of 45gf/㎠, the applied voltage of 600v and the voltage supply time of 25minites.
Keywords
Anodic Bonding; Fracture Toughness; Bonding Strength Measurement; Taguchi Method;
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Times Cited By KSCI : 1  (Citation Analysis)
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