• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.2020-2022
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS fileds because of its application possibility in harsh environements. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The PECVD oxide was characterized by XPS and AFM, respectively. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$cm^2{\sim}$ Max : 15.5 kgf/$cm^2$).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.763-768
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• 2005

Bare-chip packaging becomes more popular along with the miniaturization of IT components. In this paper, we have studied flip-chip process, and developed automated bonding system. Among the several bonding method, NCP bonding is chosen and batch-type equipment is manufactured. The dual optics and vision system aligns the chip with the substrate. The bonding head equipped with temperature and force controllers bonds the chip. The system can be easily modified for other bonding methods such as ACF In bonding process, the bonding forte and temperature are known as the most dominant bonding parameters. A parametric study is performed for these two parameters. For the test sample, we used standard flip-chip test kit which consists of FR4 boards and dummy flip-chips. The bonding test was performed fur two types of flip-chips with different chip size and lead pitch. The bonding temperatures are chosen between $25^{\circ}C\;to\;300^{\circ}C$. The bonding forces are chosen between 5N and 300N. The bonding strength is checked using bonding force tester. After the bonding force test, the samples are examined by microscope to determine the failure mode. The relations between the bonding strength and the bonding parameters are analyzed and compared with bonding models. Finally, the most suitable bonding condition is suggested in terms of temperature and force.

• Proceedings of the Korea Concrete Institute Conference
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• 2001.05a
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• pp.69-74
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• 2001

Steel plate or fiber composite plate are mainly used in externally bonding method. Shear strengthening by externally bonding method is to confirm shear safety and to avoid brittle failure. In case of strengthening by externally bonding method, a failure of structure occurs frequently due to delamination between strengthening plate and concrete. Therefore, it is important to consider the delamination in the strengthening design. The objective of this study is to propose a modified shear strength evaluation by considering the delamination. The delamination criteria of strengthening plate is established by the ultimate strain and shear stress. And shear strength of RC beams is proposed in terms of the delamination criteria. The proposed shear strength is compared with test results and verified through the comparison.

• Proceedings of the KSR Conference
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• 2008.06a
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• pp.512-518
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• 2008

The importance of modern electronic devices is gradually increased and, the requirement of the safe and reliable earthing and bonding for protection of the electronic devices is consequently absolute. The electrical continuity and physical strength of the bonding work in rail signal and impedance bonding is also one of the important issues. The thermit welding for earth cable connection and rail bonding work proposed hereunder is an effectively applicable in many fields of rail industries.

• Transactions of Materials Processing
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• v.11 no.7
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• pp.596-600
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• 2002

The ultrasonic bonding method and its feasibility are investigated in this work for joining the micro components and MEMS packaging. The ultrasonic bonding process is analyzed using a lumped mode, and preliminary experiments using the eutectic solder and copper pin were carried out to verify possibility to MEMS packaging. The ultrasonic bonding process appears to be adequate for MEMS packaging by providing localized heating at the selected area. Microscopic behavior of the bond joint through ultrasonic vibration needs further investigation.

• Journal of the Korean Society of Safety
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• v.7 no.3
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• pp.99-107
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• 1992

Weld bonding can be applied as a combined method of spot welding and adhesive to have more advantages than those. Weld bonding has many merits that enlarge the fatigue strength of spot Welding and also improve the creep of adhesive. But it has not beer proved well in the various environmental conditions. In this study, weld bonding test for fatigue properties and tensile strength is presented under such various coditions as temperatures, humidity, and etc.

• Geotechnical Engineering
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• v.14 no.6
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• pp.57-71
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• 1998

Present bonding methods which connect steel pipe and spread footing in pile foundation have been generally used. These methods however showed lots of difficulties in the quality control. A new bonding method, which is called 'Bolted Bonding Method(BBM)' , is developed. This method uses factory-made parts so that it may increase the degree of quality, and workability, and is being adopted in the Held concerned. The method is verified by the structural analysis and laboratory test and then a new design formula is proposed. In addition, a comparison test of the present methods and BBM are conducted to observe the applicability and economy of the latter. As results, it is observed that BBM shows 5 to 10 times faster in Held work and 9% to 50% cheaper in construction cost than the existing methods.

• Proceedings of the KSME Conference
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• 2000.11a
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• pp.292-297
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• 2000

In this research, the dynamic photoelastic experimental hybrid method for bimaterial is introduced. Dynamic biaxial loading device is developed, its strain rate is 31.637 s-1 and its maximum impact load is 20 ton. Manufactured methods for model of the dynamic photoelastic experiment for bimaterial are suggested. They are bonding method(bonding material: AW106, PC-1) and molding method. In the bonding method, residual stress is not occurred in the manufactured bimaterial. Crack is propagated along the interface or sometimes deviated from the interface. While in the molding method, residual stress is occurred in the manufactured bimaterial. Crack is always deviated from the interface and propagated in the epoxy region(softer materila). In order to propagate with constant velocity along the interface of bimaterial with arbitrary stiffer material, edge crack should be located along the interface of the acute angle side of the softer material in the bimaterial.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.447-450
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• 2001

Abstract-Si direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively. Components existed in the interlayer were analysed by using FT-lR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 2.4kgf/cm$^2$∼Max : 14.9kgf/cm$^2$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.859-864
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• 2003

We prepared SOI(silicon-on-insulator) wafer pairs of Si II SiO$_2$/Si$_3$N$_4$ II Si using wafer direct bonding with an electric furnace annealing(EFA), a fast linear annealing(FLA), and a rapid thermal annealing(RTA), respectively, by varying the annealing temperatures at a given annealing process. We measured the bonding area and the bonding strength with processes. EFA and FLA showed almost identical bonding area and theoretical bonding strength at the elevated temperature. RTA was not bonded at all due to warpage, We report that FLA process was superior to other annealing processes in aspects of surface temperature, annealing time, and bonding strength.