• Title/Summary/Keyword: Bonding Method

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The Bending and the Bearing Capacity of Bonding Method of Steel Piles into Pile Caps (강관말뚝 두부보강 방법의 휨내력 및 압축내력 특성)

  • 오성남;유제남;홍성영
    • Proceedings of the Korean Geotechical Society Conference
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    • 2002.03a
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    • pp.389-396
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    • 2002
  • Engineers should be careful in the design of bonding piles into pile caps because they are weak points in the pile foundation. Therefore in this study, the mechanism of bonding piles into pile caps was explained, and the design method of the composite bonding method was proposed. And the proposed design method was verified in comparison with the result of the full scale test. Also, the characteristic for the bearing capacity and the mechanism of compressive load of bonding method were analyzed.

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Composite Bonding Methods of Steel Pipe Piles into Pile Caps Using Steel Couplers (강재결합구를 이용한 강관말뚝 합성형 두부결합 방법)

  • 오성남;심창수;유재남;홍성영
    • Proceedings of the Korean Geotechical Society Conference
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    • 2001.03a
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    • pp.323-330
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    • 2001
  • The existing bonding methods of steel pipe piles into pile caps have many problems during construction or design. To overcome these, the composite bonding method of the bolting type and the welding type are proposed in this stud\ulcorner. The full scale test and the numerical analysis using finite element method were performed to verify the function of them. As results, the method of the filled with concrete in steel pipe piles head was good effective to increse strength. And the composite bonding methods are effective to protect the damage caused by earthquake than the bolted bonding method. Also, the composite bonding methods are cheaper than the existing bonding methods and a good construction as well.

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Flip Chip Interconnection Method Applied to Small Camera Module

  • Segawa, Masao;Ono, Michiko;Karasawa, Jun;Hirohata, Kenji;Aoki, Makoto;Ohashi, Akihiro;Sasaki, Tomoaki;Kishimoto, Yasukazu
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2000.10a
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    • pp.39-45
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    • 2000
  • A small camera module fabricated by including bare chip bonding methods is utilized to realize advanced mobile devices. One of the driving forces is the TOG (Tape On Glass) bonding method which reduces the packaging size of the image sensor clip. The TOG module is a new thinner and smaller image sensor module, using flip chip interconnection method with the ACP (Anisotropic Conductive Paste). The TOG production process was established by determining the optimum bonding conditions for both optical glass bonding and image sensor clip bonding lo the flexible PCB. The bonding conditions, including sufficient bonding margins, were studied. Another bonding method is the flip chip bonding method for DSP (Digital Signal Processor) chip. A new AC\ulcorner was developed to enable the short resin curing time of 10 sec. The bonding mechanism of the resin curing method was evaluated using FEM analysis. By using these flip chip bonding techniques, small camera module was realized.

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Bonding Method and Packaging of High Temperature RFID Tag (고온용 RFID 태그 패키징 및 접합 방법)

  • Choi, Eun-Jung;Yoo, Dea-Won;Byun, Jong-Hun;Ju, Dae-Keun;Sung, Bong-Gun;Cho, Byung-Lok
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.35 no.1B
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    • pp.62-67
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    • 2010
  • Our research group has investigated that RFID tag packaging development and RFID tag flip chip bonding method influences on the industry-environmental customized RFID tag development that has applications to various industry environmental conditions. RFID tag flip chip bonding is consisting with wire bonding, ultrasonic bonding, heat plate bonding, and laser bonding and those methods are also depending on the different RFID tag development. Our research data shows that, among the various industrial environments such as an extremely high temperature, cryogenic, high-humidity, flexible, high-durable, development of RFID tag in an extremely high temperature is inappropriate for laser bonding method, converting of heat energy as absorbing light energy or heat plate bonding method of straight heat transferring manner, on the other hand, is suitable for wire bonding method which directly connect bump to pattern using wire.

Melting induced diffusion bonding of Rene 80 superalloys using boron doping method (Ren380 超合金의 보론 塗布法을 이용한 液化誘導擴散接合法의 硏究)

  • 정재필;강춘식;이보영
    • Journal of Welding and Joining
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    • v.9 no.3
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    • pp.26-33
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    • 1991
  • As it takes very long time for the Transient Liquid Phase(TLP) bonding, we tried to reduce the bonding time by changing insert material for the high diffusivity element. On this study boron powder was doped as a insert material on the bonding surface of Rene 80 superalloy, and diffusion treated at 1150.deg.C under vacuum. On this method differently from the TLP bonding the insert material was not melted during bonding but only the base metal reacted with the boron was inducedly melted. Therefore, as this bonding mechanism is different from the existing ones, it is suggested as a Melting Induced Diffusion Bonding. When this process was used for the diffusion bonding, the bonding time including homogenization decreased greatly compared to the conventional TLP bonding.

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Measurement of Glass-Silicon Interfacial fracture Toughness and Experimental Evaluation of Anodic Bonding Process based on the Taguchi Method (다구찌 방법에 의한 유리-실리콘 양극접합 계면의 파괴인성치 측정 및 양극접합공정 조건에 따른 접합강도 분석)

  • Kang, Tae-Goo;Cho, Young-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.6
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    • pp.1187-1193
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    • 2002
  • Anodic bonding process has been quantitatively evaluated based on the Taguchi analysis of the interfacial fracture toughness, measured at the interface of anodically bonded silicon-glass bimorphs. A new test specimen with a pre-inserted blade has been devised for interfacial fracture toughness measurement. A set of 81 different anodic bonding conditions has been generated based on the three different conditions for four different process parameters of bonding load, bonding temperature, anodic voltage and voltage supply time. Taguchi method has been used to reduce the number of experiments required for the bonding strength evaluation, thus obtaining nine independent cases out of the 81 possible combinations. The interfacial fracture toughness has been measured for the nine cases in the range of 0.03∼6.12 J/㎡. Among the four process parameters, the bonding temperature causes the most dominant influence to the bonding strength with the influence factor of 67.7%. The influence factors of other process parameters, such as anodic voltage and voltage supply time, bonding load, are evaluated as 18%, 12% and 2.3%, respectively. The maximum bonding strength of 7.23 J/㎡ has been achieved at the bonding temperature of 460$\^{C}$ with the bonding load of 45gf/㎠, the applied voltage of 600v and the voltage supply time of 25minites.

A study on the diffusion bonding of the $Al_2$O$_3$ ceramics to metal (A$_2$O$_3$세라믹과 Ni-Cr-Mo鋼과의 인서트 合金을 이용한 擴散接合에 關한 硏究)

  • 김영식;박훈종;김정일
    • Journal of Welding and Joining
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    • v.10 no.3
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    • pp.63-72
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    • 1992
  • The joining methods of ceramics to metals which can be expected to obtain high temperature strength are mainly classified into the solid-state diffusion bonding method and the active brazing method. Between these two, the solid-state diffusion bonding method is given attentions as substituting method for active brazing method due to being capable of obtaining higher bonding strength at high temperature and accurate bonding. In this paper, the solid-state diffusion bonding of $Al_{2}$O$_{3}$ ceramics to Ni-Cr-Mo alloy steel (SNCM21) using insert metal was carried out. The insert metal employed in this study was experimentally home-made, Ag-Cu-Ti alloy. Influence of several bonding parameters of $Al_{2}$O$_{3}$SNCM21 joint was quantitatively evaluated by bonding strength test, and microstructural analyses at the interlayer were performed by SEM/EDX. From above experiments, the optimum bonding condition of the solid-state diffusion bonding of $Al_{2}$O$_{3}$/SNCM21 using Ag-Cu-Ti insert metal was determined. Futhermore, high temperature strength and thermal-shock properties of $Al_{2}$O$_{3}$/SNCM21 joint were also examined. The results obtained are as follows. 1. The maximum bonding strength was obtained at the temperature of 95% melting point of insert metal. 2. The high temperature strength of $Al_{2}$O$_{3}$/SNCM21 joint appeared to bemaximum value at test temperature 500.deg.C and the bonding strength with increasingtemperature showed parabolic curve. 3. The strength of thermal-shocked specimens was far deteriorated than those of as-bonded specimens. Especially, water-quenched specimen after heated up to 600.deg. C was directly fractured in quenching.

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Ultrasonic ACF Bonding Technique for Mounting LCD Driver ICs (LCD 구동 IC의 실장을 위한 초음파 ACF접합 기술)

  • Joung, Sang-Won;Yun, Won-Soo;Kim, Kyung-Soo
    • Journal of Institute of Control, Robotics and Systems
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    • v.14 no.6
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    • pp.543-547
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    • 2008
  • In the paper, we develop the ultrasonic bonding technique for LCD driver chips having small size and high pin-density. In general, the mounting technology for LCD driver ICs is a thermo-compression method utilizing the ACF (An-isotropic Conductive Film). The major drawback of the conventional approach is the long process time. It will be shown that the conventional ACF method based on thermo-compression can be remarkably enhanced by employing the ultrasonic bonding technique in terms of bonding time. The proposed approach is to apply the ultrasonic energy together with the thermo-compression methodology for the ACF bonding process. To this end, we design a bonding head that enables pre-heating, pressure and ultrasonic excitation. Through the bonding experiments mainly with LCD driver ICs, we present the procedures to select the best combination of process parameters with analysis. We investigate the effects of bonding pressure, bonding time, pre-heating temperature before bonding, and the power level of ultrasonic energy. The addition of ultrasonic excitation to the thermo-compression method reduces the pre-heating temperature and the bonding process time while keeping the quality bonding between the LCD pad and the driver IC. The proposed concept will be verified and demonstrated with experimental results.

The Evaluation of Stability for Hook-type Bonding Method of Pile Foundation and Cap (훅타입 말뚝두부보강 기초의 안정성 평가)

  • Lee, Heunggil;Oh, Sewook
    • Journal of the Korean GEO-environmental Society
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    • v.8 no.3
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    • pp.41-49
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    • 2007
  • The typical bonding methods which connect steel pipe pile and spread footing is bolted bonding method using +type cover plate for reinforcing a head of steel pipe pile. In this paper, stability of spread footing in pile foundation have been evaluated by loading test of +type cover plate for reinforcing a head of pile and hook type bonding method. The presents results from a series of pilot model test on vertically loaded piles foundation of bolted bonding method and hook type bonding method, pile foundation is identified to safety due to pile foundation exceed 8.5~21% which more than yield stress of steel pipe pile. As the results of horizontal loading tests, peak load of piles foundation of hook type bonding method has estimated in 41.1tonf and it was exceed about 33% which more than pile foundation of bolted bonding method.

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Development of bonding processes for micro-optical and thermo-fluidic components (광/열유체 부품의 접합공정 개발)

  • 김정호;이지혜;유중돈;최두선
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2002.10a
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    • pp.137-140
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    • 2002
  • The main objectives in the first year include selection of the MEMS bonding methods and feasibility study of selected methods. The ultrasonic bonding method is chosen for MEMS packaging, and the processes to provide localized heating are proposed. The ultrasonic bonding process is analyzed using a lumped model. Preliminary experiments using the eutectic solder and copper pin were performed to verify possibility to MEMS packaging. The preliminary results show possibility of the ultrasonic bonding method for MEMS packaging.

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