• Korean Journal of Materials Research
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• v.10 no.10
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• pp.665-670
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• 2000

Linear annealing method was developed to increase the bond strength of Si wafer pair mated at room tem­perature instead of conventional furnace annealing method. It has been known that the interval of the two mating wafer surfaces decreases and the density of gaseous phases generated at the interface increases with increase in an-nealing temperature. The new annealing method consisting of one heat source and light reflecting mirror used these two phenomena and was applied to Si$\mid$$\mid$Si and Si$\mid$$\mid$$SiO_2/Si$ bonding. The bonding interface observed directly by using IR camera and HRTEM showed clear bonding interface without any unbonded areas except the area generated by the dusts inserted into the mating interface at the room temperature. Crack opening method and direct tensile test was ap­pplied to measure the bond strength. The two methods showed similar results. The bond strength increased continuous­tly with the increase of annealing temperature.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.10a
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• pp.215-222
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• 2004

We synthesized a aziridine bonding agent that play an important role in increasing the adhesion property between polymer binders and solid particles. It increases the physical properties of polymer-based propellant. Chemical reaction between two materials increase the interface adhesion. We analyzed and studied the chemical characteristics of the material and physical properties of a liner applied the aziridine bonding agent. We also studied the adhesion property of a liner/propellant applied the aziridine bonding agent. 3M was use as control group. In accordance with US MIS (Missile Interim Specification) we examined the chemical properties. As a result of our study, newly synthesized aziridine bonding agent was as good as quality of 3M HX-868.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.55-60
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• 2020

The recent semiconductor packaging technology is evolving into a high-performance system-in-packaging (SIP) structure, and copper-to-copper bonding process becomes an important core technology to realize SIP. Copper-to-copper bonding process faces challenges such as copper oxidation and high temperature and high pressure process conditions. In this study, the bonding interface quality of low-temperature copper-to-copper bonding using a two-step plasma treatment was investigated through quantitative bonding strength measurements. Our two-step plasma treatment formed copper nitride layer on copper surface which enables low-temperature copper bonding. The bonding strength was evaluated by the four-point bending test method and the shear test method, and the average bonding shear strength was 30.40 MPa, showing that the copper-to-copper bonding process using a two-step plasma process had excellent bonding strength.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 1999.10a
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• pp.437-443
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• 1999

This paper deals with the stress singularity induced at the interface corner between the viscoelastic thin film and the rigid substrate subjected to uniform temperature change. The viscoelastic film has been assumed to be thermorheologically simple. The time-domain boundary element method(BEM) has been employed to investigate the behavior of interface stresses. The order of the free-edge singularity has been obtained numerically for a given viscoelastic model. It is shown that the free-edge stress intensity factor is relaxed with time, while the order of the singularity increases with time for the viscoelastic model considered.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.3
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• pp.61-66
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• 1993

The interface properties of Fluoride/GaAs structures were investigated. It was foung that rapid thermal annealing(RTA) typically 800-850$^{\circ}C$for 1 min, was useful for improving the interface properties of that structures. The analysis by means of SIMS indicated that interdiffusion of each constitutional atom through the interface was negligible. The interfacial atom bonding model for RTA treatment was proposed. Bases on these results, inversion-type GaAs MISFET was fabricated using standard planar technologies.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.61-66
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• 2010

Cu-Cu thermo-compression bonding process was successfully developed as functions of the deposited Cu thickness and $Ar+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the interfacial toughness was measured by 4-point bending test. Pre-annealing with $Ar+H_2$ gas at $300^{\circ}C$ is effective to achieve enough interfacial adhesion energy irrespective of Cu film thickness. Successful Cu-Cu bonding process achieved in this study results in delamination at $Ta/SiO_2$ interface rather than Cu/Cu interface.

• The korean journal of orthodontics
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• v.22 no.2 s.37
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• pp.449-474
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• 1992

The purpose of this study was to evaluate the in vitro shear bond strengths to enamel and the failure sites of three ceramic brackets and one metal bracket in combination with light cured orthodontic adhesive. The brackets were divided into four groups. Each ceramic bracket group had different bonding mechanisms with adhesive. Group A; metal bracket with foil-mesh base (control group) Group B; ceramic bracket with micromechanical retention Group C; ceramic bracket with chemical bonding Group D; ceramic bracket with mechanical retention and chemical bonding. Forty extracted human lower first premolars were prepared for bonding and 10 brackets for each group were bonded to prepared enamel surfaces with $Transbond^{\circledR}$ light cured ortho dontic adhesive. Twenty four hours after bonding, the Instron universal testing machine was used to test the shear bond strength of brackets to enamel. After debonding, brackets and enamel surfaces were examined under stereoscopic microscope to determine the failure sites, Statistical analysis of the data was carried out with ANOVA test and $Scheff\acute{e}$ test using SPSS PC+. The results were as follows. 1 . There were statistically significant differences in mean shear bond strengths of three ceramic bracket groups (p < 0.05). Shear bond strengths of group C and D were significantly higher than that of group B and shear bond strength of group C was significantly higher than that of group D. 2. Group C and D both had significantly higher shear bond strengths than metal bracket (group A), but there were no significant differences in shear bond strengths between group A and B (p < 0.05). 3. The failure sites of four bracket groups were also different. Group C and D failed primarily at enamel-adhesive interface, but group A and B failed primarily at bracket base-adhesive interface. 4. Among all ceramic bracket groups, group B was very similar to metal bracket in the aspect of shear bond strength and failure site.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1000-1007
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• 2001

In an evacuated tube solar collector, the stable sealing of the heat pipe to the glass tube is important for the collector to use for a long period of time. The sealing of copper tube to the glass is quite difficult because of the large differences in the physical and chemical properties of the two materials. In this study, therefore, a proper copper oxide layer was induced to improve the chemical bonding of the two materials, and the oxidation state of copper and the interface between copper and glass were examined by XRD, SEM and EDS. Its bonding strength was also measured. Cu$_2$O was formed when the bare copper was heat-treated under 600$^{\circ}C$, while CuO oxide layer was formed above that temperature. The bonding state of CuO to the copper was very poor. The borate treatment of the copper, however, extend the stable forming of Cu$_2$O layer to 800$^{\circ}C$. Borosilicate glass tube was sealed to a copper tube by Housekeeper method only when the sealing part was covered with Cu$_2$O layer. The bonding strength at the interface was measured 354.4N, its thermal shock resistance was acceptable.

• Journal of Adhesion and Interface
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• v.13 no.1
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• pp.1-8
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• 2012

The effect of the grafting ratio on the mechanical property and adhesion property of the grafted EPDM modified with methacrylic acid (MA) was investigated. The storage modulus of MA-grafted EPDM was maintained higher than that of cross-linked EPDM vulcanizate by sulfur, but it was observed that the storage modulus was decreased at elevated temperature because of the weakened secondary bonding. When the functional group for hydrogen bonding was introduced in EPDM, it had excellent mechanical properties by the aggregate between grafted EPDM molecules and crystallinity of MA. The bonding strength between EPDM and other rubbers was very low because EPDM has nonpolar property and low molecular interaction to others. The bonding strength was increased as increasing grafting ratio and it was excellent enough to break the rubber during the peel test when the grafting ratio was more than 10%.

• Journal of Adhesion and Interface
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• v.1 no.1
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• pp.30-37
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• 2000

This study focused on the direct blending of bonding agents (resorcinol, hexamethylenetetramine, NaOH) into rubber compound to simplify the composite manufacturing process. The mechanism of direct blending system was studied by comparing the following two cases. The one is direct blending of bonding agents into rubber compound and then allows the reaction (Case I). The other is mixing of reactant obtained by reaction of bonding agents (Case II). According to the morphology analysis, the Case II showed the clean interfacial area between bonding agents and matrix rubber, while the Case I created the new interphase under proper processing condition. Also, the optimum adhesion strength between SBR and nylon cord could be obtained with bonding agents whose molar ratios of resprcinol/hexamethylenetetramine was 1.2/1 in the recipes.