• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.398-398
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• 2007

Most recently, the Liquid Crystal (LC) aligning capabilities achieved by ion beam exposure on the diamond-like carbon (DLC) thin film layer have been successfully studied. The DLC thin films have a high mechanical hardness, a high electrical resistance, optical transparency and chemical inertness. Nitrogen doped Diamond Like Carbon (NDLC) thin films exhibit properties similar to those of the DLC films and better thermal stability than the DLC films because C:N bonding in the NDLC film is stronger against thermal stress than C:H bonding in the DLC thin films. Moreover, our research group has already studied ion beam alignment method using the NDLC thin films. The nematic liquid crystal (NLC) alignment effects treated on the SiNx thin film layers using ion beam irradiation for three kinds of N rations was successfully studied for the first time. The SiNx thin film was deposited by plasma-enhanced chemical vapor deposition (PECVD) and used three kinds of N rations. In order to characterize the films, the atomic force microscopy (AFM) image was observed. The good LC aligning capabilities treated on the SiNx thin film with ion beam exposure for all N rations can be achieved. The low pretilt angles for a NLC treated on the SiNx thin film with ion beam irradiation were measure.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.45-45
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.411.1-411.1
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• 2016

In this study, we examined the effects of boron doping on the dielectric reliability of solution processed aluminum oxide ($Al_2O_3$). When boron is doped in aluminum oxide, the hysteresis reliability is improved from 0.5 to 0.4 V in comparison with the undoped aluminum oxide. And the accumulation capacitance is increased when boron was doped, which implying the reduction of the thickness of dielectric film. The improved dielectric reliability of boron-doped aluminum oxide is originated from the small ionic radius of boron ion and the stronger bonding strength between boron and oxygen ions than that of between aluminum and oxygen ions. Strong boron-oxygen ion bonding in aluminum oxide results dielectric film denser and thinner. The leakage current of aluminum oxide also reduced when boron was doped in aluminum oxide.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1733-1736
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• 2006

Nanosilver has intrinsic problem to adhesion on the surface of silica. To improve interfacial properties between nanosilver and silica substrate, a thin titanium film is introduced in this study. The titaniumcoated silica substrates are prepared by sputter technique. The commercial silver nanopaste with size around 3-7nm is used in this study. The results indicate thin layer of titanium can improve the bonding properties of nanosilver and expect to be used in fabrication of TFT display panel.

• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.33-37
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• 2008

This paper describes the development of a new $5.0{\times}3.2mm$ SAW filter bank which is consist of 12 L, C matching components and 4 SAW bare chips on PCB substrate with CSP technology. We improved the manufacturing cost by removing the ceramic package through direct flip bonding of $LiTaO_3$ SAW bare chip on PCB board after mounting L, C passive element on PCB board. After that we realized the hermitic sealing by laminating the epoxy film. To confirm the confidentiality and durability of the above method, we have obtained the optimum flip bonding & film laminating condition, and figured out material property and structure to secure the durability & moisture proof of PCB board. The newly developed super mini $5.0{\times}3.2mm$ filter bank shows the superior features than those of existing products in confidence, electrical, mechanical characters.

• Korean Journal of Materials Research
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• v.27 no.5
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• pp.242-247
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• 2017

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.426-427
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• 2007

Here we describe the formation of a self-assembled film of thin multiwalled carbon Nanotubes(t-MWNT) modified with hydroxy groups through hydrogen peroxide treatment. Morphologies of t-MWNT films could be controlled by the various coating method, such as filtering, drop casting, spraying method, etc. The results show that on densification of the CNT suspension during drying, multiple hydroxy group-modified MWNTs can be self-assembled through strong surface hydrogen bond interaction while MWNTs usually exist an entangled state in the film. The interaction between t-MWNT was illustrated from Raman spectrum of spray coated films.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.613-614
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• 2010

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.615-616
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• 2010