• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.357-358
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• 2005

Compact power amplifier modules (PAM) for WCDMA/KPCS and GSM/WCDMA dual-band applications based on multilayer low temperature co-fired ceramic (LTCC) substrates are presented in this paper. The proposed modules are composed of an InGaP/GaAs HBT PAs on top of the LTCC substrates and passive components such as RF chokes and capacitors which are embedded in the substrates. The overall size of the modules is less than 6mm $\times$ 6mm $\times$ 0.8mm. The measured result shows that the PAM delivers a power of 28 dBm with a power added efficiency (PAE) of more than 30 % at KPCS band. The adjacent-channel power ratio (ACPR) at 1.25-MHz and 2.25-MHz offset is -44dBc/30kHz and -60dBc/30kHz, respectively, at 28-dBm output power. Also, the PAM for WCDMA band exhibits an output power of 27 dBm and 32-dB gain at 1.95 GHz with a 3.4-V supply. The adjacent-channel leakage ratio (ACLR) at 5-MHz and 10-MHz offset is -37.5dBc/3.84MHz and -48dBc/3.84MHz, respectively. The measured result of the GSM PAM shows an output power of 33.4 dBm and a power gain of 30.4 dB at 900MHz with a 3.5V supply. The corresponding power added efficiency (PAE) is more than 52.6 %.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.495-498
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• 2006

This paper reports a high power 60 GHz push-push oscillator fabricated using 0.12 um metamorphic high electron-mobility transistors (mHEMTs). The devices with a $0.1{\mu}m$ gate-length exhibited good DC and RF characteristics such as a maximum drain current of 700 mA/mm, a peak gm of 660 mS/mm, and an $f_T$ of 170 GHz. By combining two sub-oscillators having $6{\times}50{\mu}m$ periphery mHEMT, the push-push oscillator achieved a 6.3 dBm of output power at 59.5 GHz with more than -35 dBc fundamental suppression. This is one of the highest output power obtained using mHEMT technology without buffer amplifier, and demonstrates the potential of mHEMT technology for cost effective millimeter-wave commercial applications.

• International Journal of Industrial Entomology and Biomaterials
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• v.12 no.1
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• pp.7-14
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• 2006

Silkworm diseases are better prevented than cured. Disinfection and hygiene are the two important aspects in silkworm rearing to prevent the diseases. Suitable disinfectant is the primary need to disinfect the rearing house, its surroundings and appliances to eliminate the persistent pathogens from the rearing environment. In this direction, Serichlor, a new disinfectant in Indian Sericulture marketed as Serichlor-60 (contains 60,000 ppm of chlorine dioxide) and Serichlor-20 (contains 20,000 ppm of chlorine dioxide) has been evaluated for its germicidal effect against the pathogens of silkworm, viz., spores of Nosema bombycis, Bacillus thuringiensis, polyhedra of BmNPV and conidia of Beauveria bassiana both in vitro and in vivo. Results indicated that high concentration (2,500 ppm of chlorine dioxide) is required to kill all the pathogens at 100% level. The efficacy of the Serichlor was greatly enhanced by the addition of 0.5% slaked lime solution. 500 ppm of chlorine dioxide in 0.5% slaked lime solution was found effective against all the pathogens tested. This concentration of disinfectant was also found effective for disinfection of rearing house, rearing appliances and silkworm egg surface. The disinfectant is stable, non hazardous, least corrosive and most suitable for Indian Sericulture.

• Journal of Life Science
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• v.30 no.8
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• pp.701-707
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• 2020

Gene editing technology using the clustered regularly interspaced short palindromic repeat (CRISPR) and the CRISPR associated protein (Cas)9 has been highly anticipated in developing breeding techniques. In this study, we discuss gene scissors as a tool for silkworm molecular breeding through analysis of Bombyx mori Kynurenine 3-Monooxygenase (BmKMO) gene editing using the CRISPR/Cas9 system and analysis of generational transmission through mutagenesis and selective crossing. The nucleotide sequence of the BmKMO gene was analyzed, and three guide RNAs (gRNAs) were prepared. Each synthesized gRNA was combined with Cas9 protein and then analyzed by T7 endonuclease I after introduction into the BM-N silkworm cell line. To edit the silkworm gene, K1P gRNA and Cas9 complexes were subsequently microinjected into the silkworm embryos; the hatching rate was 18% and the incidence of mutation was 60%. The gene mutation was verified in the heterozygous G0 generation, but no phenotypic change was observed. In homozygotes generated by self-crossing, a mutant phenotype was observed. These results suggest that silkworm molecular breeding using the CRISPR/Cas9 system is possible and could be an effective way of shortening the time required.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.11
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• pp.2083-2087
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• 2011

The SiC-$ZrB_2$ composites were produced by subjecting a 40:60 vol.% mixture of zirconium diboride($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering(SPS). Sintering was carried out for 60sec at $1400^{\circ}C$ (designation as TP145 and TP146), $1500^{\circ}C$(designation as TP155 and TP156) and uniaxial pressure 50MPa, 60MP under argon atmosphere. The physical, electrical, and mechanical properties of the SiC-$ZrB_2$ composites were examined. The relative density of TP145, TP146, TP155 and TP156 were 94.75%, 94.13%, 97.88% and 95.80%, respectively. Reactions between ${\beeta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The flexural strength, 306.23MPa of TP156 was higher than that, 279.42MPa of TP146 at room temperature, but lower than that, 392.30MPa of TP155. The properties of a SiC-$ZrB_2$ composites through SPS under argon atmosphere were positive temperature coefficient resistance (hereafter, PTCR) in the range from $25^{\circ}C$ to $500^{\circ}C$. The electrical resistivities of TP145, TP146, TP155 and TP156 were $6.75{\times}10^{-4}$, $7.22{\times}10^{-4}$, $6.17{\times}10^{-4}$ and $6.71{\times}10^{-4}{\Omega}{\cdot}cm$ at $25^{\circ}C$, respectively. The densification of a SiC-$ZrB_2$ composite through hot pressing depend on the sintering temperature and pressure. However, it is convinced that the densification of a SiC-$ZrB_2$ composite do not depend on sintering pressure under SPS.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1137-1140
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• 2002

A V-band low-noise amplifiers (LNA) based on the Millimeter-wave monolithic integrated circuit (MIMIC) technology were fabricated using high performance 0.1 $\mu\textrm{m}$ $\Gamma$-shaped pseudomorphic high electron mobility transistors (PHEMT＇s), coplanar waveguide (CPW) structures and the integrated process for passive and active devices. The low-noise designs resulted in a two-stage MIMIC LNA with a high S$\sub$21/ gain of 14.9 dB and a good matching at 60 ㎓. 20 dBm of IP3 and 3.9 dB of minimum noise figure were also obtained from the LNA. The 2-stage LNA was designed in a chip size of 2.3 ${\times}$1.4 mm$^2$by using 70 $\mu\textrm{m}$ ${\times}$2 PHEMT’s. These results demonstrate that a good low-noise performance and simultaneously with a high gain performance is achievable with GaAs PHEMT's in the 60 ㎓ band.

• Journal of the Korea Society of Computer and Information
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• v.17 no.8
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• pp.51-60
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• 2012

I propose the 5Gbps/1.25Gbps WDM/TDM hybrid Passive Optical Network(PON) with inverse RZ(Return to Zero) code coded downstream and NRZ(Non Return to Zero) upstream re-modulation and analyze its performance by performing simulation with MATLAB. The results have shown that an optical line termination (OLT) can be connected to 8, 16 optical network unit (ONU)s with the Bit Error Rate(BER) of $10^{-9}$ when the distance between OLT and ONU is 10Km and transmitted optical powers are more than -3.8, -0.9dBm, respectively. The proposed WDM/TDM hybrid PON system can solve the problem of data rate limit in upstream which happened in the conventional TDM PON because the upstream data rate is proportional to ONU and does not require a light source in ONU and its control circuits in OLT, thus can be a useful technology for asymmetric optical subscriber networks.

• The Journal of the Korea institute of electronic communication sciences
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• v.4 no.3
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• pp.183-189
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• 2009

In this paper, we propose RF front-end architecture using hybrid conversion method to receive broadband signal. The validity is verified by design, fabrication and experiment. The proposed RF front-end architecture due to up-conversion block improves the deficiency of performance deterioration to be generated through harmonic signal and image signal conversion in the conventional RF front-end, and improves the deficiency of the complexity that is from to adopt a multiple local oscillators for the generation of wideband LO signal in the conventional RF front-end by applying the principle that tuning bandwidth is multiplied at sub-harmonic mixer. Manufactured circuits satisfy the deduced design specification and target standard with gain above 80 dB, noise figure below 6.0 dB and IIP3 performance above -5.0 dBm for the condition of the minimum gain in RF front-end.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.6 s.360
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• pp.60-68
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• 2007

A technique is presented to extract differential second harmonic output from common source nodes of a cross-coupled P-& N-FET oscillator. Provided the impedances at the common source nodes are optimized and the fundamental swing at the VCO core stays in a proper mode, it is found that the amplitude and phase errors can be kept within $0{\sim}1.6dB$ and $+2.2^{\circ}{\sim}-5.6^{\circ}$, respectively, over all process/temperature/voltage corners. Moreover, an impedance-tuning circuit is proposed to compensate any unexpectedly high errors on the differential signal output. A Prototype 5-GHz VCO with a 2.5-Hz LC resonator is implemented in $0.18-{\mu}m$ CMOS. The error signal between the differential outputs has been measured to be as low as -70 dBm with the aid of the tuning circuit. It implies the push-push outputs are satisfactorily differential with the amplitude and phase errors well less than 0.34 dB and $1^{\circ}$, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.55-60
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• 2014

For an high speed communication, a 40GHz VCO was implemented using a 0.11um standard CMOS technology. The mm-wave VCO was designed by a LC type using a spiral inductor, and a simplified architecture with buffers and a smart biasing technique were used to get a high performance. The frequency range of the proposed VCO is 34~40GHz which is suitable for mm-Wave communication system. It has an output power of -16dBm and 16% tuning range. And the phase noise is -100.33dBc/Hz at 1MHz offset at 38GHz fundamental frequency. The total power consumption of VCO including PADs is 16.8mW with 1.2V supply voltage. The VCO achieves the FOMT of -183.8dBc/Hz which is better than previous VOCs.