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http://dx.doi.org/10.5370/KIEE.2011.60.11.2083

Effects of Pressure on Properties of SiC-ZrB2 Composites through SPS  

Lee, Jung-Hoon (원광대학교 대학원 전기공학과)
Jin, Bm-Soo (원광대학교 대학원 전기공학과)
Shin, Yong-Deok (원광대학교 전기.정보통신공학부, 부설 공업기술개발연구소)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.60, no.11, 2011 , pp. 2083-2087 More about this Journal
Abstract
The SiC-$ZrB_2$ composites were produced by subjecting a 40:60 vol.% mixture of zirconium diboride($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering(SPS). Sintering was carried out for 60sec at $1400^{\circ}C$ (designation as TP145 and TP146), $1500^{\circ}C$(designation as TP155 and TP156) and uniaxial pressure 50MPa, 60MP under argon atmosphere. The physical, electrical, and mechanical properties of the SiC-$ZrB_2$ composites were examined. The relative density of TP145, TP146, TP155 and TP156 were 94.75%, 94.13%, 97.88% and 95.80%, respectively. Reactions between ${\beeta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The flexural strength, 306.23MPa of TP156 was higher than that, 279.42MPa of TP146 at room temperature, but lower than that, 392.30MPa of TP155. The properties of a SiC-$ZrB_2$ composites through SPS under argon atmosphere were positive temperature coefficient resistance (hereafter, PTCR) in the range from $25^{\circ}C$ to $500^{\circ}C$. The electrical resistivities of TP145, TP146, TP155 and TP156 were $6.75{\times}10^{-4}$, $7.22{\times}10^{-4}$, $6.17{\times}10^{-4}$ and $6.71{\times}10^{-4}{\Omega}{\cdot}cm$ at $25^{\circ}C$, respectively. The densification of a SiC-$ZrB_2$ composite through hot pressing depend on the sintering temperature and pressure. However, it is convinced that the densification of a SiC-$ZrB_2$ composite do not depend on sintering pressure under SPS.
Keywords
Spark plasma sintering(SPS); Pressuer; Temperatuer; Positive temperature coefficient resistance(PTCR);
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Times Cited By KSCI : 2  (Citation Analysis)
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