Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A High Power 60 GHz Push-Push Oscillator Using $0.12{\mu}m$ Metamorphic HEMTs

60 GHz 대역 고출력 $0.12{\mu}m$ MHEMT Push-Push 발진기

  • Lee, Jong-Wook (School of Electronics and Information, Kyung Hee University) ;
  • Kim, Sung-Won (School of Electrical Engineering, Seoul National University) ;
  • Kim, Kyoung-Woon (School of Electrical Engineering, Seoul National University) ;
  • Seol, Gyung-Seon (School of Electrical Engineering, Seoul National University) ;
  • Kwon, Young-Woo (School of Electrical Engineering, Seoul National University) ;
  • Seo, Kwang-Seok (School of Electrical Engineering, Seoul National University)
  • 이종욱 (경희대학교 전자정보대학 전파통신) ;
  • 김성원 (서울대학교 전기공학부) ;
  • 김경운 (서울대학교 전기공학부) ;
  • 설경선 (서울대학교 전기공학부) ;
  • 권영우 (서울대학교 전기공학부) ;
  • 서광석 (서울대학교 전기공학부)
  • Published : 2006.06.21
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Abstract

This paper reports a high power 60 GHz push-push oscillator fabricated using 0.12 um metamorphic high electron-mobility transistors (mHEMTs). The devices with a $0.1{\mu}m$ gate-length exhibited good DC and RF characteristics such as a maximum drain current of 700 mA/mm, a peak gm of 660 mS/mm, and an $f_T$ of 170 GHz. By combining two sub-oscillators having $6{\times}50{\mu}m$ periphery mHEMT, the push-push oscillator achieved a 6.3 dBm of output power at 59.5 GHz with more than -35 dBc fundamental suppression. This is one of the highest output power obtained using mHEMT technology without buffer amplifier, and demonstrates the potential of mHEMT technology for cost effective millimeter-wave commercial applications.

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