• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.109-113
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• 2020

A power device is a component used as a switch or rectifier in power electronics to control high voltages. Consequently, power devices are used to improve the efficiency of electric-vehicle (EV) chargers, new energy generators, welders, and switched-mode power supplies (SMPS). Power device designs, which require high voltage, high efficiency, and high reliability, are typically based on MOSFET (metal-oxide-semiconductor field-effect transistor) and IGBT (insulated-gate bipolar transistor) structures. As a unipolar device, a MOSFET has the advantage of relatively fast switching and low tail current at turn-off compared to IGBT-based devices, which are built on bipolar structures. A superjunction structure adds a p-base region to allow a higher yield voltage due to lower R_DS (on) and field dispersion than previous p-base components, significantly reducing the total gate charge. To verify the basic characteristics of the superjunction, we worked with a planar type MOSFET and Synopsys' process simulation T-CAD tool. A basic structure of the superjunction MOSFET was produced and its changing electrical characteristics, tested under a number of environmental variables, were analyzed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.373-373
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• 2014

Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

• IEIE Transactions on Smart Processing and Computing
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• 제4권3호
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• pp.189-193
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• 2015

This paper provides the design techniques of a successive approximation register (SAR) type 12b analog-to-digital converter (ADC) for distributed maximum power point tracking (DMPPT) control in a photovoltaic system. Both a top-plate sampling technique and a $V_{CM}$-based switching technique are applied to the 12b capacitor digital-to-analog converter (CDAC). With these techniques, we can implement a 12b SAR ADC with a 10b capacitor array digital-to-analog converter (DAC). To enhance the accuracy of the ADC, a single-to-differential converted DAC is exploited with the dual sampling technique during top-plate sampling. Simulation results show that the proposed ADC can achieve a signal-to-noise plus distortion ratio (SNDR) of 70.8dB, a spurious free dynamic range (SFDR) of 83.3dB and an effective number of bits (ENOB) of 11.5b with bipolar CMOS LDMOD (BCDMOS) $0.35{\mu}m$ technology. Total power consumption is 115uW under a supply voltage of 3.3V at a sampling frequency of 1.25MHz. And the figure of merit (FoM) is 32.68fJ/conversion-step.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1283-1288
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• 2004

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(1)
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• pp.155-158
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• 2001

A 640Gb/s high-speed ATM switching system that is based on the technologies of advanced MCM, 0.25um CMOS and optical WDM interconnection is fabricated for future N-ISDN services. A 40 layer, 160mm$\times$114mm ceramic MCM realizes the basic ATM switch module with 80Gbps throughput. The basic unit ATM switch module with 80Gb/s throughput. The basic unit ATM switch MCM consists of in 8 chip advanced 0.25um CMOS VLSI and 32 chip I/O Bipolar VLSIs. The MCM employs an 40 layer, very thin layer ceramic MCM and a uniquely structured closed loop type liquid colling system is adopted to cope with the MCM's high-power dissipation of 230w. The MCM is Mounted on a 32cm$\times$50cm mother board. A three stage ATM switch is realized by optical WDM interconnection between the high-performance MCM.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1816-1819
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• 2002

Nowadays, CO2 lasers are used widely in many applications such as materials fabrication, communications, remote sensing and military purpose etc. It is important to control the laser output power in those fields. In this paper, current resonant half-bridge inverter and Cockcraft-Walton circuit are used to vary the laser output power. This laser power supply is designed and fabricated which has less switching losses and compact size. Also we used an IGBT(Insulated Gate Bipolar Transistor) as a switching device of a power supply and PIC one-chip microprocessor are used to control the gate signal of the IGBT precisely. We investigated the output characteristics of this CO2 laser. As a result, the maximum laser output power of 26[W] is obtained at the resonant frequency of about 13[kHz].

• 한국전기전자재료학회논문지
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• 제30권4호
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• pp.214-217
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• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.

• 한국전기전자재료학회논문지
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• 제29권3호
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• pp.135-140
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• 2016

In this study, we developed the solution-processed PMMA-$HfO_x$ hybrid ReRAM devices to overcome the respective drawbacks of organic and inorganic materials. The performances of PMMA-$HfO_x$ hybrid ReRAM were compared to those of PMMA- and $HfO_x$-based ReRAMs. Bipolar resistive switching behavior was observed from these ReRAMs. The PMMA-$HfO_x$ hybrid ReRAMs showed a larger operation voltage margin and memory window than PMMA-based and $HfO_x$-based ReRAMs. The reliability and electrical instability of ReRAMs were remarkably improved by blending the $HfO_x$ into PMMA. An Ohmic conduction path was commonly generated in the LRS (low resistance state). In HRS (high resistance state), the PMMA-based ReRAM showed SCLC (space charge limited conduction). the PMMA-$HfO_x$ hybrid ReRAM and $HfO_x$-based ReRAM revealed the Pool-Frenkel conduction. As a result of flexibility test, serious defects were generated in $HfO_x$ film deposited on PI (polyimide) substrate. On the other hand, the PMMA and PMMA-$HfO_x$ films showed an excellent flexibility without defect generation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.176-179
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• 2002

Nowadays, CO2 lasers are used widely in many applications such as materials fabrication. communications, remote sensing and military purpose etc. It is important to control the laser output power in those fields. In this paper, current resonant half-bridge inverter and Cockcraft-Walton circuit are used to vary the laser output power. This laser power supply is designed and fabricated which has less switching losses and compact size. Also we used an IGBT(insulated Gate Bipolar Transistor) as a switching device of a power supply and PIC one-chip microprocessor are used to control the gate signal of the IGBT precisely. We investigated the output characteristics of this CO2 laser. As a result. the maximum laser output power of 26 [W] is obtained at the resonant frequency of about 13 [kHz].

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.180-182
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• 2001

Input Current Correction of Single-Phase Buck Rectifier is studied in the paper. To sinusoidal waveform the input current with a near-unity power factor over a wide variety of operating conditions, the output capacitor is operated with voltage reversibility for the supply by arranging the auxiliary diode and power switching device. Then the output voltage is superposed on the input voltage during on time duration of power switching devices in order to minimize the input current distortion caused by the small input voltage when changing the polarity. The tested setup, using two insulated-gate bipolar transistors(IGBT) and a microcomputer, is implemented and IGBT are switched with 20[kHz], which is out of the audible band. Moreover, a rigorous state-space analysis is introduced to predict the operation of the rectifier. The simulated results confirm that the input current can be sinusoidal waveform with a near-unity power factor and a satisfactory output voltage regulation can be achieved.