• Journal of the Korean Society of School Health
• /
• v.11 no.1
• /
• pp.63-74
• /
• 1998

The purposes of this study are to show in interpersonal relations what factors male students are stressed from, how they experience stress, how they cope With it in each situation, and what this results in It attempt to gam basic materials to promote male student health and positive coping methods, The subject of this study was 15 male students of C University located in Seoul and Kyeonggui-Do They were composed of 5 sophomores, 5 Juniors and 5 seniors The period for collecting materials was October 1997 to January 1998, and the interview time ranged from 50 minutes to two hours The interview frequency was one to three times as occasion demanded, The materials were analyzed by the methods and theory suggested by Strauss & Corbin (1990) The results were 130 categories grouped into 33 divisions by similarity Finally, they were united into 9 higher categories In interpersonal relations the core category of male student stress is "affliction", and it follows the course of generation-coping-resolution The types showed in the course of material analysis are as follows, (1) When the subject student is on good terms with the other and the stress is repeated- "affliction" is strong and continuous-and his ability sense is strong, he copes with "affliction" With his own will and solves It affirmatively, (2) When the subject student is on good terms with the other and the stress is repeated-so "affliction" is strong and continuous-and his ability sense is weak, he copes with "affliction" with an emotional bias and solves it negatively (3) When the subject student is on good terms with the other and the stress is temporary-"affliction" is strong and temporary-and his ability sense is strong, he copes with "affliction" with his own will and solves it affirmatively (4) When the subject student becomes estranged from the other and the stress is temporary-"affliction" is weak and temporary-and his ability sense is weak, he copes with "affliction" with an emotional bias and solves it negatively, (5) When the subject student becomes estranged from the other and the stress is repeated-"affliction" is strong-and continuous and his ability sense is strong, he copes with "affliction" with his own will and solves it affirmatively (6) When the subject student becomes estranged from the other and the stress is repeated-"affliction" is strong and continuous-and his ability sense is weak, he copes with "affliction" with an emotional bias and solves it negatively. According to the above results, the conditions of cause and effect for male students to generate "affliction" should be understood in order to help cope with stress caused by interpersonal relations A program for education and counseling should be developed for male students to strengthen their 'ability sense' in choosing coping strategies In addition, the individual estimation for ability sense should be performed when education and counseling them.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1701-1703
• /
• 2006

Here we describe a novel driving scheme in the form of negative AC bias stress (NAC) to compensate shift in the threshold voltage for hydrogenated amorphous silicon (${\alpha}$-Si:H) thin film transistor (TFT) for AMOLED applications. This scheme preserves the threshold voltage shift of ${\alpha}$-Si:H TFT for infinitely long duration of time(>30,000 hours) and thereby overall performance, without using any additional TFTs for compensation. We briefly describe about the possible driving schemes in order to implement for real time AMOLED applications. We attribute most of the results based on concept of plugging holes and electrons across the interface of the gate insulator in a controlled manner.

• Korean Journal of Fisheries and Aquatic Sciences
• /
• v.53 no.4
• /
• pp.637-649
• /
• 2020

An ideal 3D primitive equation model is implemented to investigate upper ocean response to typhoons, focusing on rightward bias (RWB) which means an appearance of an intensified sea surface cooling to the right side of the typhoon track. The model has 26-stratified levels and a flat bottom (1000 m), covering a rectangular domain of about 3,060 km×3,300 km with four open boundaries. The sea water is forced by an atmospheric pressure and a gradient wind of the typhoon. The model well reproduces the RWB in previous observations and theoretical analyses. For the fast moving typhoon (FMT) (-8m/sec), the model shows that in the mixed layer (ML), the RWB in the SST noticeably appears clearly illustrating the coupling between inertial motion and wind stress, but in the subsurface layer (-100m), the RWB does not emerge since a cyclonic current field (CCF) caused by wind stress curl is primarily dominant. For the slowly moving typhoon (SMT) (-3m/sec), however, the RWB does not emerge because the coupling is weakened and the CCF is rather predominant even in the ML. In the model, we conclude that the RWB noticeably emerges in the FMT but does not emerge in the SMT related to predominance of CCF.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.231.2-231.2
• /
• 2014

훌륭한 전기적 특성을 갖는 ZnO 기반의 산화물 반도체 박막트랜지스터(TFT)는 AMOLEDs에 적용될 수 있다. 하지만 이러한 장점에도 불구하고 산화물 반도체 TFT소자에 전압이 인가되었을 때 문턱 전압이 이동하게 되는 안정성 문제를 갖는다. 따라서 이를 해결하기 위한 연구가 널리 진행 되고 있다. 본 연구소에서는 고압 분위기 열처리를 통해 안정성의 원인으로 작용할 수 있는 산소공공(Oxygen vacancy)을 감소시키는 연구를 진행하였다. 산화물 반도체 TFT소자의 안정성을 향상시키는 대표적인 분위기 열처리로는 산소 고압 열처리(HPA)가 있으며, 또한 H2O 기체를 사용한 열처리를 통해 TFT소자의 안정성을 높일 수 있다는 연구 결과가 보고된 바 있다. 본 연구에서는 IGZO TFT소자에 H2O보다 더 큰 반응성을 갖는 산화제인 H2O2 기체를 사용한 HPA를 통해 positive bias stress(PBS) 및 negative bias illumination stress(NBIS) 조건에서 안정성이 향상됨을 확인하였고 이를 H2O 기체를 사용한 경우와 비교하였다. 그 결과 H2O2 기체를 산화제로 사용할 때 기존 H2O 기체에 비해 효과적인 PBS 및 NBIS 신뢰성 개선을 확인하였다.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.50 no.8
• /
• pp.285-291
• /
• 2013

In this paper, MOS-Capacitor and MOSFET devices with a Low Level Leakage Current of oxide thickness, channel width and length respectively were to investigate the reliability characterizations mechanism of ultra thin gate oxide films. These stress induced leakage current means leakage current caused by stress voltage. The low level leakage current in stress and transient current of thin silicon oxide films during and after low voltage has been studied from strss bias condition respectively. The stress channel currents through an oxide measured during application of constant gate voltage and the transient channel currents through the oxide measured after application of constant gate voltage. The study have been the determination of the physical processes taking place in the oxides during the low level leakage current in stress and transient current by stress bias and the use of the knowledge of the physical processes for driving operation reliability.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1455-1458
• /
• 2008

Amorphous silicon (a-Si:H) thin-film transistors (TFTs) are fabricated on flexible organic polymer foil substrates. As-fabricated performance, electrical bias-stability at elevated temperatures, electrical response under mechanical flexing, and prolonged mechanical stability of the TFTs are studied. TFTs made on plastic at ultra low process temperatures of $150^{\circ}C$ show initial electrical performance like TFTs made on glass but large gate-bias stress instability. An abnormal saturation of the instability against operation temperature is observed.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.6
• /
• pp.32-37
• /
• 2003

In this paper, the trap characteristics of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4nm and 814nm, which have the gate area 10$\^$-3/ $\textrm{cm}^2$. The stress induced leakage currents will affect data retention, and the stress current and transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Journal of the Korean Institute of Telematics and Electronics T
• /
• v.36T no.1
• /
• pp.13-18
• /
• 1999

The trap density by the stress bias in silicon oxides with different thicknesses has been investigated. The trap density by stress bias was shown to be composed of on time current and off time current. The on time trap density was composed of dc current. The off time trap density was caused by the tunneling charging and discharging of the trap in the interfaces. The on time trap density was used to estimate to the limitations on oxide thicknesses. The off time trap density was used to estimate the data retention in nonvolatile memory devices.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.17 no.1
• /
• pp.94-100
• /
• 2017

Stress drain bias dependent current model is proposed for sub-70-nm p-channel metal-oxide semiconductor field-effect transistors (pMOSFETs) under drain-avalanche-hot-carrier (DAHC-) mechanism. The proposed model describes the both on-current and off-current degradation by using two device parameters: channel length variation (${\Delta}L_{ch}$) and threshold voltage shift (${\Delta}V_{th}$). Also, it is a simple and effective model of predicting reliable circuit operation and standby power consumption.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.2
• /
• pp.249-254
• /
• 2015

Solution-derived amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistor (TFTs) were developed using a microwave irradiation treatment at low process temperature below $300^{\circ}C$. Compared to conventional furnace-annealing, the a-IGZO TFTs annealed by microwave irradiation exhibited better electrical characteristics in terms of field effect mobility, SS, and on/off current ratio, although the annealing temperature of microwave irradiation is much lower than that of furnace annealing. The microwave irradiated TFTs showed a smaller $V_{th}$ shift under the positive gate bias stress (PGBS) and negative gate bias stress (NGBS) tests owing to a lower ratio of oxygen vacancies, surface absorbed oxygen molecules, and reduced interface trapping in a-IGZO. Therefore, microwave irradiation is very promising to low-temperature process.