• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.233-239
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• 2000

Sr0.9Bi2+xTa2O9(x=0, 0.1, 0.2, 0.3) thin films on IrO2/SiO2/Si or Pt/Ti/SiO2/Si substrate were prepared by spin coating method using SBT stock solutions synthesized by MOD process. SBT thin films on IrO2 transformed to layered perovskite phase at $700^{\circ}C$, but showed low breakdown voltage due to their porous microstructure. The smaple of Sr0.9Bi2+xTa2O9 composition showed the best dielectric and electrical properties. When the sample of the same composition was annealed at 80$0^{\circ}C$, the dielectric and electric properties were improved due to the grian growth and dense surface. the remanent polarization values(2Pr) at $\pm$3 V for IrO2 and Pt electrodes were 10.5, 7.15$\mu$C/$\textrm{cm}^2$, respectively. The SBT thin film with IrO2 electrode showed the lower coercive field. The leakage current density and breakdown voltage of SBT thin films on IrO2 were higher than those on Pt.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.168-171
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• 2003

Bismuth layered structure, Cerium-substituted $Bi_4Ti_3O_{12}$ ($(Bi,Ce)_4Ti_3O_{12}$) thin films were prepared on the $Pt/TiO_2/SiO_2/Si$ substrates by the pulsed laser deposition method. We investigated the Ce-subsitituted effect on the grain orientation and ferroelectric properties. $Ce^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of BTO decreased the deeree of c-axis orientation and increased the remanent polariation (2Pr). The structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The $(Bi,Ce)_4Ti_3O_{12}$ (BCT) thin films, which were annealed $700^{\circ}C\;and\;800^{\circ}C$ for 10min and 30min, showed a perovskite phase and dense microstructure. As the thickness of the BCT film was decresed that the ferroelectric properties of the BCT thin films were good.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.95.1-95.1
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• 2007

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.272-278
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• 2003

$Bi_4Ti_3O_{12}$ (BIT) and $(Bi_{3.25}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV) thin films were deposited on ITO/glass substrates by metal organic chemical vapor deposition (MOCVD) using ultrasonic spraying. After deposition of the films in oxygen atmosphere for 30 min, the films were heated by rapid thermal annealing (RTA) method, especially direct insertion, at various temperatures. The films were investigated on phase formation temperature, microstructure and electrical properties. From x-ray diffraction (XRD) patterns, the perovskite phase formation temperature of BLTV thin film was about $600^{\circ}C$ which was lower than that of BIT, $650^{\circ}C$. The leakage current of the BLTV thin film was measured to be $1.52\times 10^{-9}$A/$cm^2$ at an applied voltage of 1 V. The remanent polarization (Pr) and coercive field (Ec) values of the BLTV film deposited at $650^{\circ}C$ were $5.6\muC/cm^2$ and 96.5 kV/cm, respectively.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.194-197
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• 2006

Lead-free bismuth-layered perovskite ferroelectric europium-substituted $Bi_{4}Ti_{3}O_{12}(BTO)$ thin films have been successfully deposited on Pt/Ti/$SiO_2$/Si substrate by a sol-gel spin-coating process. $Bi(TMHD)_3,\;Eu(THMD)_3,\;Ti(OiPr)_4$ were used as the precursors, which were dissolved in 2-methoxyethanol. The thin films were annealed at various temperatures from $600^{\circ}\;to\;720^{\circ}C$ in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The remanent polarization value of the BET thin films annealed at $720^{\circ}C\;was\;25.95{\mu}C/cm^2$ at an applied voltage of 5 V.

• Journal of Hydrogen and New Energy
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• v.21 no.5
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• pp.375-382
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• 2010

A layered perovskite photocatalysts, $SrBi_2Nb_2O_9$ (SBN), was synthesized by the conventional solid-state reaction method and characterized by X-ray diffraction (XRD) and UV-visble spectrophotometry. The results showed that the structure of $SrBi_2Nb_2O_9$ is orthorhombic. Diffuse reflectance spectra for calcined and attrition-milled SBN showed the main absorption edges were less 400 nm, that is ultraviolet region. SBN under micron-sized powder was deposited on the $Al_2O_3$ by room temperature powder spray in vacuum process, so called aerosol deposition (AD), and nano-grained $SrBi_2Nb_2O_9$ photocatalytic thick film was fabricated. AD-deposited SBN thick films were characterized by XRD, scanning electron microscopy (SEM) and UV-visable spectrophotometry, Moreover, it was found that several nano-sized SBN film by AD process can improve the photocatalytic activity under visable reflectance.

• Journal of the Korean Ceramic Society
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• v.45 no.4
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• pp.220-225
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• 2008

Lead-free ferroelectric ceramics are widely researched today for industrial applications as sensors, actuators and transducers. Since $Pb(Zr_aTi_{1-a})O_3$-(PZT) has high Curie temperature($T_C$), high piezoelectric properties near its morphotropic phase boundary(MPB) composition and small temperature dependence electrical behavior, it has been used to commercial materials for wide temperature range and different application fields. According to the tolerance factor concept, since the $Bi^{3+}$ cation with 12-fold coordinate has a smaller ionic radius than 12-fold coordinate $Pb^{2+}$, most bismuth based perovskites possess a smaller tolerance factor. Therefore, MPBs with a higher $T_C$ may be expected in $Bi(Me^{3+})O_3PbTiO_3$ solid solutions. As in lead based perovskite systems, it is clear that we need to explore more materials in simple or complex bismuth based MPB systems. The objective of this study is to investigate the $Bi(Ni_{1_a}X_a)O_3-PbTiO_3(X=Ti^{4+},\;Nb^{5+})$ perovskite solid-solution. For improving the electronic conduction problem, the magnesium and manganese modified system was also studied.

• Journal of Sensor Science and Technology
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• v.13 no.4
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• pp.298-302
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• 2004

Thick films of $LaNiO_{3}$ having perovskite structure impregnated with indium and bismuth oxides have been used as sensing material for acetonitrile ($CH_{3}CN$) gas. The sensor response for $CH_{3}CN$ is quite good with an excellent recovery for partial pressure from 3 ppm to 20 ppm between 200 and $250^{\circ}C$. $LaNiO_{3}$ alone has exhibited low response, but after impregnation of $In_{2}O_{3}$ and $Bi_{2}O_{3}$ have given increased sensitivity even with 3 ppm partial pressure of $CH_{3}CN$ at $200^{\circ}C$. It is assumed that $CH_{3}CN$ is undergoing oxidation reaction on surface of the film.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.1-6
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• 2017

A comparative study of microwave and conventional sintering of lead-free $Bi_{1/2}(Na_{0.82}K_{0.18})_{1/2}TiO_3-BaZrO_3-CuO$ ceramics is presented. It was found that microwave sintering (MWS) can be successfully applied to the fabrication of large strain Bi-perovskite with electric field-induced strains comparable to those obtained with conventional sintering (CFS). Although MWS resulted in smaller grained microstructures than CFS, the ferroelectric properties were stronger in MWS-derived specimens than in the CFS-derived ones. The piezoelectric strain constant $d_{33}{^*}$ of the CFS-derived specimens reached a maximum value of 372 pm/V after sintering at $1100^{\circ}C$, whereas that of MWS-derived specimens peaked at $950^{\circ}C$ with a $d_{33}{^*}$ value of 324 pm/V.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.621-627
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• 1996

$SrBi_{2x}TaO_9$ ferroelectric thin films were prepared on platinized silicon substrates using MOD proces, and crystallization behavior of the films was investigated with variation of the annealing temperature and Bi content x. Crystalline phase of bismuth layered perovskite structure was formed even by baking the films at $800^{\circ}C$ for 5 minutes in air, and was not changed by annealing at temperatures raning from $700^{\circ}C$ to $900^{\circ}C$ for 1 hour in oxygen ambient. When $SrBi_{2x}TaO_9$ thin films ($0.8\lex\ie1.6$) were annealed at $800^{\circ}C$, Preferred orientation of the films along c-axis was observed with $x\ge1.2$. With increasing Bi content x, surface morphology of the films was changed from equiaxed grains to elongated grains.