Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Characteristic of ferroelectric properties of $(Bi,Ce)_4Ti_3O_{12}$ thin films deposited by pulsed laser deposition

Pulsed laser deposition 방법으로 증착된 $(Bi,Ce)_4Ti_3O_{12}$ 박막의 강유전 특성

  • 오영남 (충남대학교) ;
  • 성낙진 (충남대학교) ;
  • 윤순길 (초미세화학공정시스템 연구센터) ;
  • 전민구 (초미세화학공정시스템 연구센터) ;
  • 우성일 (초미세화학공정시스템 연구센터) ;
  • 김창수 (한국 표준과학 연구원)
  • Published : 2003.07.10
Download PDF
⟨ Previous Next ⟩

Abstract

Bismuth layered structure, Cerium-substituted $Bi_4Ti_3O_{12}$ ($(Bi,Ce)_4Ti_3O_{12}$) thin films were prepared on the $Pt/TiO_2/SiO_2/Si$ substrates by the pulsed laser deposition method. We investigated the Ce-subsitituted effect on the grain orientation and ferroelectric properties. $Ce^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of BTO decreased the deeree of c-axis orientation and increased the remanent polariation (2Pr). The structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The $(Bi,Ce)_4Ti_3O_{12}$ (BCT) thin films, which were annealed $700^{\circ}C\;and\;800^{\circ}C$ for 10min and 30min, showed a perovskite phase and dense microstructure. As the thickness of the BCT film was decresed that the ferroelectric properties of the BCT thin films were good.

Keywords