• Journal of Magnetics
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• 제13권3호
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• pp.110-113
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• 2008

In this study, heavy rare earth garnet $Tb_2Bi_1Ga_1Fe_4O_{12}$ powders were fabricated by a sol-gel and vacuum annealing process. The crystal structure was found to be single-phase garnet with a space group of Ia3d. The lattice constant $a_0$ was determined to be 12.465 ${\AA}$. From the analysis of the vibrating sample magnetometer (VSM) hysteresis loop at room temperature, the saturation magnetization and coercivity of the sample are 7.64 emu/g and 229 Oe, respectively. The N$\acute{e}$el temperature($T_N$) was determined to be 525 K. The M$\ddot{o}$ssbauer spectrum of $Tb_2Bi_1Ga_1Fe_4O_{12}$ at room temperature consists of 2 sets of 6 Lorentzians, which is the pattern of single-phase garnet. From the results of the M$\ddot{o}$ssbauer spectrum at room temperature, the absorption area ratios of Fe ions on 24d and 16a sites are 74.7% and 25.3%(approximately 3:1), respectively. These results show that all of the non-magnetic Ga atoms occupy the 16a site by a vacuum annealing process. Absorption area ratios of Fe ions are dependent not only on a sintering condition but also on the temperature of the sample. It can then be interpreted that the Ga ion distribution is dependent on the temperature of the sample. The M$\ddot{o}$ssbauer measurement was carried out in order to investigate the atomic migration in $Tb_2Bi_1Ga_1Fe_4O_{12}$.

• 한국세라믹학회지
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• 제31권12호
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• pp.1577-1587
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• 1994

TiO2 thin films with the substitution of oxygen with nitrogen were deposited on silicon substrate by metalorganic chemical vapor deposition (MOCVD) using Ti(OCH(CH3)2)4 (titanium tetraisopropoxide, TTIP) and N2O as source materials. X-ray diffraction (XRD) results indicated that the crystal structure of the deposited thin films was anatase TiO2 with only (101) plane observed at the deposition temperatures of 36$0^{\circ}C$ and 38$0^{\circ}C$, and with (101) and (200) plane at above 40$0^{\circ}C$. Raman spectroscopic results indicated that the crystal structure was anatase TiO2 in accordance with the XRD results without any rutile, fcc TiN, or hcp TiN structure. No fundamental difference was observed with temperature increase, but the peak intensity at 194.5 cm-1 increased with strong intensity at 143.0 cm-1 for all samples. The crystalline size of the films varied from 49.2 nm to 63.9 nm with increasing temperature as determined by slow-scan XRD experiments. The refractive index of the films increased from 2.40 to 2.55 as temperature increased. X-ray photoelectron spectroscopy (XPS) study showed only Ti 2s, Ti 2p, C 1s, O 1s and O 2s peaks at the surface of the film. The composition of the surface was estimated to be TiO1.98 from the quatitative analysis. In the bulk of the film Ti 2s, Ti 2p, O 1s, O 2s, N 1s and N 2s were detected, and Ti-N bonding was observed due to the substitution of oxygen with nitrogen. A satellite structure was observed in the Ti 2p due to the Ti-N bonding, and the composition of titanium nitride was determined to be about TiN1.0 from the position of the binding energy of Ti-N 2p3/2 and the quatitative analysis. The spectrum of Ti 2p energy level could be the sum of a 4, 5, or 6 Gaussian curve reconstruction, and the case of the sum of the 6 Gaussian curve reconstruction was physically most meaningful. From the results of Auger electron spectroscopy (AES), it was known that the composition was not varied significantly throughout the whole thickness of the film, and silicon oxide was not observed at the interface between the film and the substrate. The composition of the film was possible (TiO2)1-x.(TiN)x or TiO2-2xNx and in this experimental condition x was found to be about 0.21-0.16.

• Korean Chemical Engineering Research
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• 제43권2호
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• pp.206-214
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• 2005

$TiO_2$에 담지된 불균일 촉매상에서 ppm 수준으로 존재하는 수중 유기오염물질들을 제거하기 위한 모델반응으로 액상 trichloroethylene(TCE) 분해반응을 선정하였으며, 여러 반응변수의 동시제어가 가능하도록 디자인된 연속 흐름식 고정층 반응기 내에서 incipient wetness 기법으로 제조된 여러 전이금속 산화물 촉매들의 TCE 분해활성을 조사하였다. 선택된 반응조건에서 모델반응의 내부확산저항은 없었으며, $36^{\circ}C$의 반응온도에서 촉매표면에 흡착에 의한 액상 TCE 제거된 정도는 무시할 만하였고 촉매반응에 의해서만 제거될 수 있었다. TCE 제거반응에 대한 촉매들의 활성 및 반응시간에 따른 분해효율의 의존성은 사용된 금속 산화물 및 담지체의 종류에 따라 달라지는 것으로 나타났다. 5 wt.% $CoO_x$/$TiO_2$ 촉매는 본 대상반응에 대하여 가장 우수한 활성을 갖는 것으로 나타났으며, 반응시간의 경과 정도에 따라 TCE 분해효율이 점진적으로 증가하여 안정되는 전이구간의 존재를 확인할 수 있었다. 이와 같은 촉매활성의 반응시간 의존성은 반응 초기와 일정시간 경과 후의 $TiO_2$ 표면에 존재하는 $CoO_x$의 표면구조가 상이할 뿐만 아니라 반응시간 경과와 함께 활성이 더욱 높은 Co species의 표면노출을 암시하고 있다. $NiO_x$, $CrO_x$와 같은 금속 산화물 촉매들의 반응활성은 매우 낮은 수준이었다. $TiO_2$와 MFI를 담지체로 하여 각각 incipient wetness법과 이온교환법으로 제조된 $CuO_x/TiO_2$, Cu-MFI, $FeO_x/TiO_2$ 및 Fe-MFI의 TCE 제거효율을 반응시간의 함수로 살펴본 결과, Cu 촉매들에서 관찰되는 반응시간-분해효율 거동과는 다른 현상이 $FeO_x/TiO_2$와 Fe-MFI 촉매상에서 관찰되었다. $36^{\circ}C$의 반응온도에서 전반응시간 동안에 5 wt.% $FeO_x/TiO_2$ 촉매상에서 TCE 제거반응은 일어나지 않았으나, 1.2 wt.% Fe-MFI의 경우 반응 초기에 높은 제거율을 일정시간 동안 유지하다가 서서히 감소하는 비활성화 현상이 발생하였다. 이는 동일한 활성성분이 사용된다 할지라도 그 제조방법에 따라 촉매활성이 달라질 수 있음을 보여주고 있으며, 액상반응 중에 일어나는 활성성분의 redox cycle이 중요한 역할을 할 수 있음을 암시하고 있다. 가장 우수한 $CoO_x/TiO_2$ 촉매의 TCE 분해활성에 미치는 $CoO_x$ 담지량, 반응온도 등의 영향을 조사한 결과, 최적의 $CoO_x$ 담지량이 존재하였고 반응온도가 높을수록 TCE 제거효율은 높게 나타났다. 반응 중에 $CoO_x$ leaching에 의한 $CoO_x$의 손실이 확인되었으나 TCE 전환율에 영향을 미칠 정도는 아닌 것으로 판단되었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권4호
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• pp.312-317
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• 2004

High dose ($3{\times}10^{16}cm^{-2}$) implantation of Fe or Ni ions into bulk, single-crystal ZnO substrates was carried out at substrate temperature of ${\sim}350^{\circ}C$ to avoid amorphization of the implanted region. The samples were subsequently annealed at $700^{\circ}C$ to repair some of the residual implant damage. X-Ray Diffraction did not show any evidence of secondary phase formation in the ZnO. The Ni implanted samples remained paramagnetic but the Fe-implanted ZnO showed evidence of ferromagnetism with an approximate Curie temperature of ${\sim}$240K. Preliminary X-Ray Photoelectron Spectroscopy measurements showed the Fe to be ill the 2+ oxidation state. The earrler density in the implanted region still appears to be too low to support carrier-meditated origin of the ferromagnetism and formation of bound magnetic polarons may be one potential explanation for the observed magnetic properties, No evidence of the Anomalous Hall Effect could be found in the Fe-implanted ZnO, but its transport properties were dominated by the conventional or ordinary Hall effect.

• 자원리싸이클링
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• 제9권5호
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• pp.16-21
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• 2000

Generation of abnormally large grains in the microstructure of small grains has been investigated on some ferrites. Some fractions of large grains were observed in the microstructue of sintered ZnFe$_2$O$_4$, Mn-ZnFe$_2$O$_4$, Fe$_3$O$_4$(in $N_2$) and MnFe$_2$O$_4$(in air). On the other hand, the large grains were not observed in $NiFe_2$$O_4$ and $CoFe_2$$O_4$, independent of calcining and sintering conditions. The large grains seem to be generated in such ferrites that are easy to very their compositions or valencies at high temperatures. as the sintering proceeded, the number of large grains was increasing to from a continuous structure consisting of large grains, while the size of large grains did not increase remarkably. In addition, the growth of small grains was also very slow during the generation of the large grains. The large grains appeared be suddenly generated after some induction periods. Avrami equation could be applied to the relation between net volume of large grains and sintering time. Thus, the grain boundaries may be strongly stabilized when the large grains are generated. The large grain is generated y the local activation of the stabilized rain boundaries, which is caused by the variation of composition or valencies during sintering. It is concluded that the essence of the abnormal gain growth is not the generation of abnormally large grains, but the abnormal stabilization and the local activation of he grain boundaries.

• Bulletin of the Korean Chemical Society
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• 제30권5호
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• pp.1067-1070
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• 2009

We studied change in water contact angle on $TiO_2$ surfaces upon high-energy electron-beam treatment. Depending on conditions of e-beam exposures, surface OH-content could be increased or decreased. In contrast, water contact angle continuously decreased with increasing e-beam exposure and energy, i.e. change in the water contact angle cannot be rationalized in terms of the overall change in the surfacestructure of carbon-contaminated $TiO_2$. In the C 1s spectra, we found that the C-O and C=O contents gradually increased with increasing e-beam energy, suggesting that the change in the surface structure of carbon layers can be important for understanding of the wettability change. Our results imply that the degree of oxidation of carbon impurity layers on oxide surfaces should be considered, in order to fully understand the change in the oxide surface wettability.

• 한국산학기술학회논문지
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• 제8권5호
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• pp.1215-1219
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• 2007

이 논문에서는 폴리프로필렌/열방성 액정고분자 블렌드에 관한 연구 결과를 나타냈다. 기존의 연구에서 주로 쓰인 액정고분자 (Thermotropic Liquid Crystalline Polymer, TLCP)는 용융점이 대부분 270o0 이상으로 가공은 적어도 300oC 이상에서 가능하기 때문에, PP와의 블렌드 시 PP의 열분해를 피할 수 없다. 이 때문에 원하는 정도의 물성을 얻기 위해서는 과량의 TLCP를 첨가하여야 한다. 이 연구에서 고온용 TLCP 대신 융점이 220oC 정도 되는 새로운 TLCP를 사용하여 블렌드를 제조하였고, 그 특성을 관찰하였다. 연구 결과 기존 PP/TLCP 블렌드와 비교해 동등 이상의 물성을 보임을 관찰할 수 있었고, 이로서 새로운 저온용 TLCP가 PP의 강화제로 사용될 수 있음을 알 수 있었다.

• 한국세라믹학회지
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• 제25권4호
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• pp.373-379
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• 1988

$\alpha$-Al2O3-15m/o ZrO2 powder was prepared by a sol-gel method from boehmite and zirconium acetate. The transformation temperature of boehmite to $\alpha$-Al2O3 in the system Al2O3-ZrO2 was increased due to the coupled crystallization. On the other hand, the transformation temperature from boehmite to $\alpha$-Al2O3-15m/o ZrO2 could be prepared at 110$0^{\circ}C$ for 100min. The specific surface area of the product of $\alpha$-Al2O3-15m/o ZrO2 was 13.2$m^2$/g.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.207-212
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• 1998

By comparison of the experimental results in two systems of ZnO varistors, it's appear that Sb2O3 is the indispensable element for twining in ZnO varistors and the Zn7Sb2O12 spinel acts as the nucleus to form twins. Al2O3 is not the origin of twining in ZnO varistor, but it was found that Al2O3 could strengthen the twining and form a deformation twining by ZnAl2O4 dragging and pinning effect. The inhibition ratios of grain and nonuniformity of two systems ZnO varistors increase with the increase of Al2O3 content. The twins affect the inhibition of grain growth, the mechanism could be explained follow as: twins increase the mobility viscosity of ZrO grain and grain boundary, and drag ZrO grain and liquid grain boundary during the sintering, then the grain growth is inhibited and the microstructure becomes more uniform.

• Journal of information and communication convergence engineering
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• 제1권3호
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• pp.133-138
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• 2003

The preparation of $Al_{2}O_{3}-SiO_{2}$ thin films from less than one micron to several tens of microns in thickness had been prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. For the preparation of thin, continuous $Al_{2}O_{3}-SiO_{2}$ films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state. In the process of applying to substrates, this liquid left a transparent, continuous film that could be converted to crystalline $Al_{2}O_{3}-SiO_{2}$ upon heating to $1000^{\circ}C$. And, a significant change of the film density took place in the crystallization process, thus leading to the strict requirements as to the film thickness, which could survive crystallization.