• Journal of Magnetics
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• v.13 no.3
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• pp.110-113
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• 2008

In this study, heavy rare earth garnet $Tb_2Bi_1Ga_1Fe_4O_{12}$ powders were fabricated by a sol-gel and vacuum annealing process. The crystal structure was found to be single-phase garnet with a space group of Ia3d. The lattice constant $a_0$ was determined to be 12.465 ${\AA}$. From the analysis of the vibrating sample magnetometer (VSM) hysteresis loop at room temperature, the saturation magnetization and coercivity of the sample are 7.64 emu/g and 229 Oe, respectively. The N$\acute{e}$el temperature($T_N$) was determined to be 525 K. The M$\ddot{o}$ssbauer spectrum of $Tb_2Bi_1Ga_1Fe_4O_{12}$ at room temperature consists of 2 sets of 6 Lorentzians, which is the pattern of single-phase garnet. From the results of the M$\ddot{o}$ssbauer spectrum at room temperature, the absorption area ratios of Fe ions on 24d and 16a sites are 74.7% and 25.3%(approximately 3:1), respectively. These results show that all of the non-magnetic Ga atoms occupy the 16a site by a vacuum annealing process. Absorption area ratios of Fe ions are dependent not only on a sintering condition but also on the temperature of the sample. It can then be interpreted that the Ga ion distribution is dependent on the temperature of the sample. The M$\ddot{o}$ssbauer measurement was carried out in order to investigate the atomic migration in $Tb_2Bi_1Ga_1Fe_4O_{12}$.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1577-1587
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• 1994

TiO2 thin films with the substitution of oxygen with nitrogen were deposited on silicon substrate by metalorganic chemical vapor deposition (MOCVD) using Ti(OCH(CH3)2)4 (titanium tetraisopropoxide, TTIP) and N2O as source materials. X-ray diffraction (XRD) results indicated that the crystal structure of the deposited thin films was anatase TiO2 with only (101) plane observed at the deposition temperatures of 36$0^{\circ}C$ and 38$0^{\circ}C$, and with (101) and (200) plane at above 40$0^{\circ}C$. Raman spectroscopic results indicated that the crystal structure was anatase TiO2 in accordance with the XRD results without any rutile, fcc TiN, or hcp TiN structure. No fundamental difference was observed with temperature increase, but the peak intensity at 194.5 cm-1 increased with strong intensity at 143.0 cm-1 for all samples. The crystalline size of the films varied from 49.2 nm to 63.9 nm with increasing temperature as determined by slow-scan XRD experiments. The refractive index of the films increased from 2.40 to 2.55 as temperature increased. X-ray photoelectron spectroscopy (XPS) study showed only Ti 2s, Ti 2p, C 1s, O 1s and O 2s peaks at the surface of the film. The composition of the surface was estimated to be TiO1.98 from the quatitative analysis. In the bulk of the film Ti 2s, Ti 2p, O 1s, O 2s, N 1s and N 2s were detected, and Ti-N bonding was observed due to the substitution of oxygen with nitrogen. A satellite structure was observed in the Ti 2p due to the Ti-N bonding, and the composition of titanium nitride was determined to be about TiN1.0 from the position of the binding energy of Ti-N 2p3/2 and the quatitative analysis. The spectrum of Ti 2p energy level could be the sum of a 4, 5, or 6 Gaussian curve reconstruction, and the case of the sum of the 6 Gaussian curve reconstruction was physically most meaningful. From the results of Auger electron spectroscopy (AES), it was known that the composition was not varied significantly throughout the whole thickness of the film, and silicon oxide was not observed at the interface between the film and the substrate. The composition of the film was possible (TiO2)1-x.(TiN)x or TiO2-2xNx and in this experimental condition x was found to be about 0.21-0.16.

• Korean Chemical Engineering Research
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• v.43 no.2
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• pp.206-214
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• 2005

Heterogeneously-catalyzed oxidation of aqueous phase trichloroethylene (TCE) over supported metal oxides has been conducted to establish an approach to eliminate ppm levels of organic compounds in water. A continuous flow reactor system was designed to effect predominant reaction parameters in determining catalytic activity of the catalysts for wet TCE decomposition as a model reaction. 5 wt.% $CoO_x/TiO_2$ catalyst exhibited a transient period in activity vs. on-stream time behavior, suggesting that the surface structure of the $CoO_x$ might be altered with on-stream hours; regardless, it is probable to be the most promising catalyst. Not only could the bare support be inactive for the wet decomposition reaction at $36^{\circ}C$, but no TCE removal also occurred by the process of adsorption on $TiO_2$ surface. The catalytic activity was independent of all particle sizes used, thereby representing no mass transfer limitation in intraparticle diffusion. Very low TCE conversion appeared for $TiO_2$-supported $NiO_x$ and $CrO_x$ catalysts. Wet oxidation performance of supported Cu and Fe catalysts, obtained through an incipient wetness and ion exchange technique, was dependent primarily on the kinds of the metal oxides, in addition to the acidic solid supports and the preparation routes. 5 wt.% $FeO_x/TiO_2$ catalyst gave no activity in the oxidation reaction at $36^{\circ}C$, while 1.2 wt.% Fe-MFI was active for the wet decomposition depending on time on-stream. The noticeable difference in activity of the both catalysts suggests that the Fe oxidation states involved to catalytic redox cycle during the course of reaction play a significant role in catalyzing the wet decomposition as well as in maintaining the time on-stream activity. Based on the results of different $CoO_x$ loadings and reaction temperatures for the decomposition reaction at $36^{\circ}C$ with $CoO_x/TiO_2$, the catalyst possessed an optimal $CoO_x$ amount at which higher reaction temperatures facilitated the catalytic TCE conversion. Small amounts of the active ingredient could be dissolved by acidic leaching but such a process gave no appreciable activity loss of the $CoO_x$ catalyst.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.4
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• pp.312-317
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• 2004

High dose ($3{\times}10^{16}cm^{-2}$) implantation of Fe or Ni ions into bulk, single-crystal ZnO substrates was carried out at substrate temperature of ${\sim}350^{\circ}C$ to avoid amorphization of the implanted region. The samples were subsequently annealed at $700^{\circ}C$ to repair some of the residual implant damage. X-Ray Diffraction did not show any evidence of secondary phase formation in the ZnO. The Ni implanted samples remained paramagnetic but the Fe-implanted ZnO showed evidence of ferromagnetism with an approximate Curie temperature of ${\sim}$240K. Preliminary X-Ray Photoelectron Spectroscopy measurements showed the Fe to be ill the 2+ oxidation state. The earrler density in the implanted region still appears to be too low to support carrier-meditated origin of the ferromagnetism and formation of bound magnetic polarons may be one potential explanation for the observed magnetic properties, No evidence of the Anomalous Hall Effect could be found in the Fe-implanted ZnO, but its transport properties were dominated by the conventional or ordinary Hall effect.

• Resources Recycling
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• v.9 no.5
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• pp.16-21
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• 2000

Generation of abnormally large grains in the microstructure of small grains has been investigated on some ferrites. Some fractions of large grains were observed in the microstructue of sintered ZnFe$_2$O$_4$, Mn-ZnFe$_2$O$_4$, Fe$_3$O$_4$(in $N_2$) and MnFe$_2$O$_4$(in air). On the other hand, the large grains were not observed in $NiFe_2$$O_4$ and $CoFe_2$$O_4$, independent of calcining and sintering conditions. The large grains seem to be generated in such ferrites that are easy to very their compositions or valencies at high temperatures. as the sintering proceeded, the number of large grains was increasing to from a continuous structure consisting of large grains, while the size of large grains did not increase remarkably. In addition, the growth of small grains was also very slow during the generation of the large grains. The large grains appeared be suddenly generated after some induction periods. Avrami equation could be applied to the relation between net volume of large grains and sintering time. Thus, the grain boundaries may be strongly stabilized when the large grains are generated. The large grain is generated y the local activation of the stabilized rain boundaries, which is caused by the variation of composition or valencies during sintering. It is concluded that the essence of the abnormal gain growth is not the generation of abnormally large grains, but the abnormal stabilization and the local activation of he grain boundaries.

• Bulletin of the Korean Chemical Society
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• v.30 no.5
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• pp.1067-1070
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• 2009

We studied change in water contact angle on $TiO_2$ surfaces upon high-energy electron-beam treatment. Depending on conditions of e-beam exposures, surface OH-content could be increased or decreased. In contrast, water contact angle continuously decreased with increasing e-beam exposure and energy, i.e. change in the water contact angle cannot be rationalized in terms of the overall change in the surfacestructure of carbon-contaminated $TiO_2$. In the C 1s spectra, we found that the C-O and C=O contents gradually increased with increasing e-beam energy, suggesting that the change in the surface structure of carbon layers can be important for understanding of the wettability change. Our results imply that the degree of oxidation of carbon impurity layers on oxide surfaces should be considered, in order to fully understand the change in the oxide surface wettability.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.5
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• pp.1215-1219
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• 2007

In this paper, we present a study on the polypropylene/thermotropic liquid crystalline polymer blends. In previous researches, the blends are fabricated at very high temperatures, at least 300oC, since the TLCPs investigated in most studies have melting temperatures higher than 270oC. As a consequence, the thermal degradation of PP can not be avoidable. In order to obtain high physical properties, the excess amount of TLCP must be added. In this study, a new type of TLCP was used in the PP/TLCP blends. Since the new TLCP has a melting point of 220oC, the blending can be performed at much lower temperature than the previous studios. The new PP/TLCP shows similar or somewhat higher physical properties than those of the previous studies. It is proved that the new TLCP can be used as a reinforcement material in PP based blends.

• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.373-379
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• 1988

$\alpha$-Al2O3-15m/o ZrO2 powder was prepared by a sol-gel method from boehmite and zirconium acetate. The transformation temperature of boehmite to $\alpha$-Al2O3 in the system Al2O3-ZrO2 was increased due to the coupled crystallization. On the other hand, the transformation temperature from boehmite to $\alpha$-Al2O3-15m/o ZrO2 could be prepared at 110$0^{\circ}C$ for 100min. The specific surface area of the product of $\alpha$-Al2O3-15m/o ZrO2 was 13.2$m^2$/g.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.207-212
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• 1998

By comparison of the experimental results in two systems of ZnO varistors, it's appear that Sb2O3 is the indispensable element for twining in ZnO varistors and the Zn7Sb2O12 spinel acts as the nucleus to form twins. Al2O3 is not the origin of twining in ZnO varistor, but it was found that Al2O3 could strengthen the twining and form a deformation twining by ZnAl2O4 dragging and pinning effect. The inhibition ratios of grain and nonuniformity of two systems ZnO varistors increase with the increase of Al2O3 content. The twins affect the inhibition of grain growth, the mechanism could be explained follow as: twins increase the mobility viscosity of ZrO grain and grain boundary, and drag ZrO grain and liquid grain boundary during the sintering, then the grain growth is inhibited and the microstructure becomes more uniform.

• Journal of information and communication convergence engineering
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• v.1 no.3
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• pp.133-138
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• 2003

The preparation of $Al_{2}O_{3}-SiO_{2}$ thin films from less than one micron to several tens of microns in thickness had been prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. For the preparation of thin, continuous $Al_{2}O_{3}-SiO_{2}$ films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state. In the process of applying to substrates, this liquid left a transparent, continuous film that could be converted to crystalline $Al_{2}O_{3}-SiO_{2}$ upon heating to $1000^{\circ}C$. And, a significant change of the film density took place in the crystallization process, thus leading to the strict requirements as to the film thickness, which could survive crystallization.