• 한국세라믹학회지
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• 제54권6호
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• pp.492-498
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• 2017

A thermal barrier coating (TBC) with self-healing property for cracks was proposed to improve reliability during gas turbine operation, including structural design. Effect of healing agent on crack propagation behavior in TBCs with and without buffer layer was investigated through furnace cyclic test (FCT). Molybdenum disilicide ($MoSi_2$) was used as the healing agent; it was encapsulated using a mixture of tetraethyl orthosilicate and sodium methoxide. Buffer layers with composition ratios of 90 : 10 and 80 : 20 wt%, using yttria stabilized zirconia and $MoSi_2$, respectively, were prepared by air plasma spray process. After generating artificial cracks in TBC samples by using Vickers indentation, FCTs were conducted at $1100^{\circ}C$ for a dwell time of 40 min., followed by natural air cooling for 20 min. at room temperature. The cracks were healed in the buffer layer with the healing agent of $MoSi_2$, and it was found that the thermal reliability of TBC can be enhanced by introducing the buffer layer with healing agent in the top coat.

• 한국재료학회지
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• 제31권2호
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• pp.97-100
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• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

• Geomechanics and Engineering
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• 제35권1호
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• pp.13-27
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• 2023

The model production for large-scale (lateral length ≥ 2.0 m) capillary barrier (CB) model tests is time and cost-intensive. To address these limitations, the framework of a small-scale CB (SSCB) model test under the lateral no-flow condition has been established. In this study, to validate the experimental methodology of the SSCB model test, a series of seepage analyses on the SSCB model test and engineered slopes in the same and additional test conditions was performed. First, the seepage behavior and diversion length (L_D) of the CB system were investigated under three rainfall conditions. In the seepage analysis for the engineered slopes with different slope angles and sand layer thicknesses, the L_D increased with the increase in the slope angle and sand layer thickness, although the increase rate of the L_D with the sand layer thickness exhibited an upper limit. The L_D values from the seepage analysis agreed well with the results estimated from the laboratory SSCB mode test. Therefore, it can be concluded that the experimental methodology of the SSCB model test is one of the promising alternatives to efficiently evaluate the water-shielding performance of the CB system for an engineered slope.

• Carbon letters
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• 제14권4호
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• pp.247-250
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• 2013

In this study, we present a facile method of fabricating graphene oxide (GO) films on the surface of polyimide (PI) via layer-by-layer (LBL) assembly of charged GO. The positively charged amino-phenyl functionalized GO (APGO) is alternatively complexed with the negatively charged GO through an electrostatic LBL assembly process. Furthermore, we investigated the water vapor transmission rate and oxygen transmission rate of the prepared (reduced GO $[rGO]/rAPGO)_{10}$ deposited PI film (rGO/rAPGO/PI) and pure PI film. The water vapor transmission rate of the GO and APGO-coated PI composite film was increased due to the intrinsically hydrophilic property of the charged composite films. However, the oxygen transmission rate was decreased from 220 to 78 $cm^3/m^2{\cdot}day{\cdot}atm$, due to the barrier effect of the graphene films on the PI surface. Since the proposed method allows for large-scale production of graphene films, it is considered to have potential for utilization in various applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.351-351
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• 2010

OLED(organic light emitting diode)는 액정디스플레이를 대체할 차세대 평판디스플레이로 많은 주목을 받고 있다. 현재 많이 사용되고 있는 OLED의 기판재료는 Glass기판이지만 차세대 Flexible한 display에서의 적용을 위해서는 가볍고 유연한 plastic을 기판 재료로 사용 할 것으로 보인다. 하지만 plastic이 기판재료로 된 OLED의 가장 큰 단점중의 하나가 수분과 산소에 민감하여 열화를 초래한다는 것이다. 이런 수분침투와 열화 과정으로 인해 OLED의 발광효과가 약해져 OLED의 수명과 직접적으로 연결된다. 하여 외부에서 OLED내부로 유입되는 산소, 수분으로 부터 발광재료와 전극의 산화를 방지하며 외부의 충격으로부터 소자를 보호하기 위한 봉지기술은 반드시 필요하다. 따라서 본 연구에서는, flexible한 OLED에 적용되는 금속 코팅한 막의 적층구조 및 기판의 노출온도에 따른 금속 코팅막의 수분침투 특성에 대해 MOCON의 weight gain test (WGT)를 통해 barrier layer에 대해 평가하고 이에 대한 mechanism을 확립하는데 그 목적이 있다. 금속을 코팅한 막은 OLED의 cathode와 anode 재료로 많이 사용되는 Al과 ITO를 sputter장비를 이용해 single layer와 double-layer의 두 가지 구조로 PET기판에 증착하였다. 증착한 Al막의 두께는 각각 50 nm, 100 nm, 200 nm, 400 nm 등 4가지로 하였다. double-layer의 경우에는 총 두께를 절반씩 기판의 양쪽에 증착하였다. 적층구조에 따른 수분침투 특성 평가 결과로 보면 같은 두께일 때 double-layer는 single layer에 비해서 모든 시편에서 수분의 투습율이 낮음으로써 더 좋은 수분침투의 barrier 특성을 나타내었다. 특히 100 nm이상인 경우 투습율은 예상한 값보다 50%이상 낮게 나타났다.

• Nuclear Engineering and Technology
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• 제43권2호
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• pp.159-166
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• 2011

Si-rich-layer-coated U-7 wt%Mo plates were prepared in order to evaluate the diffusion barrier performance of the Si-rich layer in U-Mo vs. Al interdiffusion. Pure Si powder was used for coating the U-Mo plates by annealing at $900^{\circ}C$ for 1 h under vacuum of approximately 1 Pa. Si-rich layers containing more than 60 at% of Si were formed on U-7 wt%Mo plates. Diffusion couple tests were conducted in a muffle furnace at $560-600^{\circ}C$ under vacuum using Si-rich-layer-coated U-Mo plates and pure Al plates. Diffusion couple tests using uncoated U-Mo plates and Al-(0, 2 or 5 wt%)Si plates were also conducted for comparison. Si-rich-layer coatings were more effective in suppressing the interaction during diffusion couple tests between coated U-Mo plate and Al, when compared with U-Mo vs. Al-Si diffusion couples, since only small amounts of Al in the coating could be found after the diffusion couple tests. Si-rich-layer-coated U-7wt%Mo particles were also prepared using the same technique for U-7 wt%Mo plates to observe the microsturctures of the coated particles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.129-130
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• 2009

The P/E characteristics of $HfO_2$ CTF memory capacitor with $SiO_2/HfO_2/Al_2O_3$(OHA) engineered tunnel barrier were investigated. After a growth of thermal oxide with a thickness of 2 nm, 1 nm $HfO_2$ and 3 $Al_2O_3$ layers were deposited by atomic layer deposition (ALD) system. The band offset was calculated by analysis of conduction mechanisms through Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot. Moreover the PIE characteristics of $HfO_2$ CTF memory capacitor with OHA tunnel barrier was presented.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1349-1352
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• 2005

This paper is to investigate a defect for thermal barrier coating layers by acoustic emission method in 4-point bending test. The two-layer thermal barrier coating is composed of $150\mu{m}\;CoNiCrAlY\;bond\;coating\;by\;vacuum\;plasma\;spray(VPS)\;process\;and\;250\mu{m}\;ZrO_2-8wt%Y_2O_3$ ceramic coating layer by air plasma spray(APS) process on Inconel-718. The specimen prepared by cyclic thermal test(500, 1000, 2000cycle) at $1050^{\circ}C$ The AE monitoring system is composed of PICO type sensor, a wide band pre-amplifier(40dB), PC and AE DSP(16/32 PAC) board. The AE event, amplitude, Cumulative energy and count of coating specimens is evaluated according to cyclic thermal test.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권1호
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• pp.66-74
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• 2012

In this paper, the impact of segregation layer density ($N_{DSL}$) and length ($L_{DSL}$) on scalability and analog/RF performance of dopant-segregated Schottky barrier (DSSB) SOI MOSFET has been investigated in sub-30 nm regime. It has been found that, although by increasing the $N_{DSL}$ the increased off-state leakage, short-channel effects and the parasitic capacitances limits the scalability, the reduced Schottky barrier width at source-to-channel interface improves the analog/RF figures of merit of this device. Moreover, although by reducing the $L_{DSL}$ the increased voltage drop across the underlap length reduces the drive current, the increased effective channel length improves the scalability of this device. Further, the gain-bandwidth product in a common-source amplifier based on optimized DSSB SOI MOSFET has improved by ~40% over an amplifier based on raised source/drain ultrathin-body SOI MOSFET. Thus, optimizing $N_{DSL}$ and $L_{DSL}$ of DSSB SOI MOSFET makes it a suitable candidate for future nanoscale analog/RF circuits.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.196-197
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• 2010

NAND형 charge trap flash (CTF) non-volatile memory (NVM) 소자가 30nm node 이하로 고집적화 되면서, 기존의 SONOS형 CTF NVM의 tunnel barrier로 쓰이는 SiO2는 direct tunneling과 stress induced leakage current (SILC)등의 효과로 인해 data retention의 감소 등 물리적인 한계에 이르렀다. 이에 따라 개선된 retention과 빠른 쓰기/지우기 속도를 만족시키기 위해서 tunnel barrier engineering (TBE)가 제안되었다. TBE NVM은 tunnel layer의 전위장벽을 엔지니어드함으로써 낮은 전압에서 전계의 민감도를 향상 시켜 동일한 두께의 단일 SiO2 터널베리어 보다 빠른 쓰기/지우기 속도를 확보할 수 있다. 또한 최근에 각광받는 high-k 물질을 TBE NVM에 적용시키는 연구가 활발히 진행 중이다. 본 연구에서는 Si3N4와 HfAlO (HfO2 : Al2O3 = 1:3)을 적층시켜 staggered의 새로운 구조의 tunnel barrier Capacitor를 제작하여 전기적 특성을 후속 열처리 온도와 방법에 따라 평가하였다. 실험은 n-type Si (100) wafer를 RCA 클리닝 실시한 후 Low pressure chemical vapor deposition (LPCVD)를 이용하여 Si3N4 3 nm 증착 후, Atomic layer deposition (ALD)를 이용하여 HfAlO를 3 nm 증착하였다. 게이트 전극은 e-beam evaporation을 이용하여 Al를 150 nm 증착하였다. 후속 열처리는 수소가 2% 함유된 질소 분위기에서 $300^{\circ}C$와 $450^{\circ}C$에서 Forming gas annealing (FGA) 실시하였고 질소 분위기에서 $600^{\circ}C{\sim}1000^{\circ}C$까지 Rapid thermal annealing (RTA)을 각각 실시하였다. 전기적 특성 분석은 후속 열처리 공정의 온도와 열처리 방법에 따라 Current-voltage와 Capacitance-voltage 특성을 조사하였다.