• Journal of Korea Foundry Society
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• v.24 no.1
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• pp.34-39
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• 2004

The effects of casting condition and hot melt glue during Lost Foam Casting were investigated on the fluidity of Al alloy melt. The fluidity increased linearly with increasing pouring temperature in thick castings but non-linearly in thin casting due to the difference in main heat flow direction. The metal flow velocity was in range of $0.5{\sim}2.7$ cm/s in no evacuation condition and the minimum value of it was measured after the melt flow through the hot melt barrier. The mold evacuation improved the metal flow velocity by around $0.5{\sim}1$ cm/s. And the reaction zone layer thickness was about 1 cm in no-evacuation conditions but about 0.6 cm in mold evacuation condition of 710 torr due to the easier removal of pyrolsis product of EPS. And hot melt barrier thickness of 0.6 mm increased the reaction zone layer thickness up to about 2.5 cm. The fluidity decreased remarkably with an enlarged thickness of hot melt due to a lot of pyrolysis products.

• Journal of the Korean Institute of Telematics and Electronics
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• v.19 no.5
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• pp.26-31
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• 1982

Texturization technique has been employed to improve the efficiency of Al-MIS solar cells. The best condition for the formation of insulating layer was 50$0^{\circ}C$ in N2 ambient for 20 minutes, and the appropriate thickness of the Al barrier metal layer was about 100$\AA$ For the texturization of the face a mixture of hydrazinehydrate and pyrocathecol was used. The efficiency improvement of the texturized cells ranged from 1.2 to 1.6% under 100mW/$\textrm{cm}^2$ illumination.

• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.435-438
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• 2004

MOCVD is one of the major deposition techniques for Cu thin films and Ta-Si-N is one of promising barrier metal candidates for Cu with high thermal stability. Effects of hydrogen plasma pretreatment of the underlying Ta-Si-N film surface on the Cu nucleation in Cu MOCVD were investigated using scanning electron microscopy, X-ray photoelectron spectroscopy and Auger electron emission spectrometry analyses. Cu nucleation in MOCVD is enhanced as the rf-power and the plasma exposure time are increased in the hydrogen plasma pretreatment. The optimal plasma treatment process condition is the rf-power of 40 Wand the plasma exposure time of 2 min. The hydrogen gas flow rate in the hydrogen plasma pretreatment process does not affect Cu nucleation much. The mechanism through which Cu nucleation is enhanced by the hydrogen plasma pretreatment of the Ta-Si-N film surface is that the nitrogen and oxygen atoms at the Ta-Si-N film surface are effectively removed by the plasma treatment. Consequently the chemical composition was changed from Ta-Si-N(O) into Ta-Si at the Ta-Si-N film surface, which is favorable for Cu nucleation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.152-155
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• 2011

Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn't have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.4
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• pp.195-202
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• 2007

Corrosion resistance and torque of M10 bolt coated with Magni 565 were investigated. Corrosion protection mechanism were also studied with the microstructure of coating film. The bolts with the optimum conditions showed around $10{\mu}m$ layer thickness, a great corrosion resistance in salt spray test and a proper torque in torque/tension test. But torque coefficient k increased with the number of bolting and clamping force of M10 bolt showed significantly lower than that of specified value 28.3kN. It was thought that the repeated bolting made the coating film peel off and powdery. The sample coated with optimum coating conditions showed more higher polarization resistance and corrosion potential than the specimens of top and base coat only. The base coating film was composed of lamellar zinc flakes, which provides a large sacrificial cathodic protection. Meanwhile, the top coating film was composed of organic aluminium pigments layer, which provides barrier protection to the corrosion circumstances.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.72-72
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• 2010

Recent development of organic solar cell approaches the level of 8% power conversion efficiency by the introduction of new materials, improved material engineering, and more sophisticated device structures. As for interface engineering, various interlayer materials such as LiF, CaO, NaF, and KF have been utilized between Al electrode and active layer. Those materials lower the work function of cathode and interface barrier, protect the active layer, enhance charge collection efficiency, and induce active layer doping. However, the addition of another step of thin layer deposition could be a little complicated. Thus, on a typical solar cell structure of Al/P3HT:PCBM/PEDOT:PSS/ITO glass, we used Li:Al alloy electrode instead of Al to render a simple process. J-V measurement under dark and light illumination on the polymer solar cell using Li:Al cathode shows the improvement in electric properties such as decrease in leakage current and series resistance, and increase in circuit current density. This effective charge collection and electron transport correspond to lowered energy barrier for electron transport at the interface, which is measured by ultraviolet photoelectron spectroscopy. Indeed, through the measurement of secondary ion mass spectroscopy, the Li atoms turn out to be located mainly at the interface between polymer and Al metal. In addition, the chemical reaction between polymer and metal electrodes are measured by X-ray photoelectron spectroscopy.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2182-2185
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• 1999

In this experimental study we propose the double dielectric barrier discharge(DDBD) reactor to produce as high an electric field as possible. DDBD reactor is designed to remove $NO_x$ at atmospheric pressures from the moving pollution source such as diesel automobile DDBD reactor consisted of two cylinder glass tubes arranged so that the gas flow was directed between the two tubes. Inside of the inner tube was filled with small metal beads and outside of the inner tube was wounded with stainless wire to form the electrode. The outer tube was surrounded by an aluminum foil In this reactor there are three electrodes, i.e. metal bead(C), helical wire(I) and aluminum foil(0). By using DDBD reactor we will report some interesting results of treatment of the gas which is the dilute mixtures of NO in N2. And then we compared thee results with the results of cylinder-wire(CW) which is one of popularly used reactor in non-thermal plasma applications.

• Korean Journal of Materials Research
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• v.27 no.7
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• pp.364-368
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• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.

• Korean Membrane Journal
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• v.4 no.1
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• pp.36-40
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• 2002

The diffusion coefficients of ions in the reverse transport system using the carrier mediated membrane were estimated from the diffusional membrane permeabilities and the ion activity in membrane system. In the aqueous alkali metal ions-membrane system diffusional flux of alkali metal ions driven by coupled proton was analyzed. The aqueous phase I contained NaOH solution and the aqueous phase II also contained NaCl and HCl mixed solution. The concentration of Na ions of both phases were $10^{0},\;10^{-1},\;10^{-2},\;5{\times}10^{-1}\;and\;5{\times}10^{-2}\;mol{\cdot}dm^{-3}$ and the concentration of HCI in aqueous phase II was always kept at $1{\times}10^{-1}\;mol{\cdot}dm^{-3}$. Moreover, the carrier concentration in liquid membrane was $10^{-2}\;mol{\cdot}dm^{-3}$. The results indicated that the diffusion coefficients depend strongly on the concentration of both phases electrolyte solution equilibriated with the membrane. The points were interpreted in terms of the energy barrier theory. Furthermore, eliminating the potential terms from the membrane equation was derived.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.104-109
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• 2019

An analytical threshold voltage model is proposed to analyze the threshold voltage roll-off and drain-induced barrier lowering (DIBL) for a junction-based double-gate (JBDG) MOSFET and a junction-less double-gate (JLDG) MOSFET. We used the series-type potential distribution function derived from the Poisson equation, and observed that it is sufficient to use n=1 due to the drastic decrease in eigenvalues when increasing the n of the series-type potential function. The threshold voltage derived from this threshold voltage model was in good agreement with the result of TCAD simulation. The threshold voltage roll-off of the JBDG MOSFET was about 57% better than that of the JLDG MOSFET for a channel length of 25 nm, channel thickness of 10 nm, and oxide thickness of 2 nm. The DIBL of the JBDG MOSFET was about 12% better than that of the JLDG MOSFET, at a gate metal work-function of 5 eV. It was also found that decreasing the work-function of the gate metal significantly reduces the DIBL.