Effects of Hydrogen Plasma Treatment of the Underlying TaSiN Film Surface on the Copper Nucleation in Copper MOCVD |
Park, Hyun-Ah
(Department of Materials Science and Engineering, Inha University)
Lim, Jong-Min (Department of Materials Science and Engineering, Inha University) Lee, Chong-Mu (Department of Materials Science and Engineering, Inha University) |
1 |
Reactively Sputtered TiN as a Diffusion Barrier between Cu and Si
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DOI |
2 |
Copper Metalorganic Chemical Vapor Deposition Reactions of Hexafluoroacetylacetonate Cu(I) Vinyltrimethylsilane and bis (Hexafluoroacetylacetonate) Cu(II) Adsorbed on Titanium Nitride
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3 |
Barrier Layers : Principles and Applications in Microelectronics
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DOI |
4 |
Sputtered Ta-Si-N Diffusion Barriers in Cu Metallizations for Si
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DOI ScienceOn |
5 |
Correlation of W-Si-N Film Microstructure with Barrier Performance against Cu Diffusion
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DOI |
6 |
Evaluation of Amorphous(Mo, Ta, W)---Si---N Diffusion Barriers for<Si>| Cu Metallizations
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DOI ScienceOn |
7 |
Ta-Si-N as a Diffusion Barrier between Cu and Si
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DOI ScienceOn |
8 |
Structural and Chemical Stability of TaSiN Thin Film between Si and Cu
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DOI ScienceOn |
9 |
Ti-Si-N Diffusion Barriers between Silicon and Copper
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DOI ScienceOn |
10 |
Reactively Sputtered Ti-Si-N Films. II. Diffusion Barriers for Al and Cu Metallizations on Si
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DOI ScienceOn |
11 |
Structural Investigation of Thermally Nitrided Amorphous Ti Silicide
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DOI ScienceOn |
12 |
Chemical Vapor Deposition of Titaniumsiliconnitride Films
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DOI ScienceOn |
13 |
Enhancement of Cu Nucleation in Cu-MOCVD by Pd Sputtering Pretreatment
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DOI ScienceOn |
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