• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.466-468
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• 2009

The metal-insulator-silicon (MIS) capacitors with $SiO_2$ and high-k dielectrics ($HfO_2$, $Al_2O_3$) were fabricated, and the current-voltage characteristics were investigated. Especially, an effective barrier height between metal gate and dielectric was extracted by using Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot of quantum mechanical(QM) modeling. The calculated barrier heights of thermal $SiO_2$, ALD $SiO_2$, $HfO_2$ and $Al_2O_3$ are 3.35 eV, 0.6 eV, 1.75 eV, and 2.65 eV, respectively. Therefore, the performance of non-volatile memory devices can be improved by using engineered tunnel barrier which is considered effective barrier height of high-k materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.367-371
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• 2018

1,200 V class junction barrier schottky (JBS) diodes and schottky barrier diodes (SBD) were simultaneously fabricated on the same 4H-SiC wafer. The resulting diodes were characterized at temperatures from room temperature to 473 K and subsequently compared in terms of their respective I-V characteristics. The parameters deduced from the observed I-V measurements, including ideality factor and series resistance, indicate that, as the temperature increases, the threshold voltage decreases whereas the ideality factor and barrier height increase. As JBS diodes have both Schottky and PN junction structures, the proper depletion layer thickness, $R_{on}$, and electron mobility values must be determined in order to produce diodes with an effective barrier height. The comparison results showed that the JBS diodes exhibit a larger effective barrier height compared to the SBDs.

• Wind and Structures
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• v.38 no.6
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• pp.411-425
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• 2024

To investigate the optimal aerodynamic parameters of wind barriers for the T-beam of high-speed railway (HSR) bridge and the wind field of the wind barrier-train-bridge system, the three-component forces of the system and the wind pressure on the vehicle surface were tested and analyzed through the sectional model wind test. The effects of wind velocity, with/without wind barrier, the height of wind barrier, and the air permeability of the wind barrier on the aerodynamic characteristics of the train-bridge system are discussed. Additionally, a CFD numerical model is constructed to evaluate the wind environment of the bridge surface with/without the wind barrier, and the impact of wind barrier on the running safety of vehicles are analyzed. Comprehensively considering the running safety of the train and the wind-resistant stability of the bridge, it is more appropriate to set the wind barrier height H as 3.5 m and the porosity 𝛽 as 30% respectively.

• Bulletin of the Korean Chemical Society
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• v.23 no.1
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• pp.71-74
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• 2002

The apparent barrier height for charge transfer through an interfacial water layer between a Pt/Ir tip and a gold surface has been measured using STM technique. The average thickness of the interfacial water layer inside an STM junction was controlled by the amount of moisture. A thin water layer on the surface was formed when relative humidity was in the range of 10 to 80%. In such a case, electron tunneling through the thin water layer became the majority of charge transfers. The value of the barrier height for the electron tunneling was determined to be 0.95 eV from the current vs. distance curve, which was independent of the tip-sample distance. On the other hand, the apparent barrier height for charge transfer showed a dependence on tip-sample distance in the bias range of 0.1-0.5 V at a relative humidity of approximately 96%. The non-exponentiality for current decay under these conditions has been explained in terms of electron tunneling and electrochemical processes. In addition, the plateau current was observed at a large tip-sample distance, which was caused by electrochemical processes and was dependent on the applied voltage.

• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.685-692
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• 1997

Effects of sintering temperature and time on the phase formation, the characteristics of sintering and electrical behaviors of NASICON compounds with Na3Zr2Si2PO12 and Na3.2Zr1.3Si2.2P0.8O10.5 compositions synthesized by solid state reaction were investigated. Maximum relative densities of 96% and 91% were obtained for Na3Zr2Si2PO12 and Na3.2Zr1.3Si2.2P0.8O10.5 compounds, respectively. Complex impedance analysis in a frequency range below 4 MHz was performed to measure the ionic conductivity and migration barrier height of the compounds at RT-30$0^{\circ}C$. The maximum ionic conductivity and the minimum migration barrier height were 0.45 ohm-1cm-1 and 0.07 eV, respectively. The migration barrier height of the high temperature form (space group : R3c) is about 30-40% of that of the low temperature form (space group : C2/c) in two NASICON compounds. Ionic conductivity increases with increasing sinterability, and the presence of glass phase in Na3.2Zr1.3Si2.2P0.8O10.5 compounds lowers significantly ionic conductivity at temperatures above 14$0^{\circ}C$.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.15 no.6
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• pp.29-41
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• 2012

This study was conducted in Ningxia Hui autonomous region, located at southern part of Mu Us sand land in China. To investigate relationships between windbreak effect and installation cost of sand barriers, plastic net is utilized by using four kind of heights (0.2, 0.3, 0.4 and 0.5m) and four kind of porosities (20, 30, 50 and 70%). These heights and porosities are measured for estimating distances for effective windbreak. It is shown that porosity and the distance have a positive relationship at same heights and porosity on ground indicates a constant figure when height reaches a certain level, regardless of the porosity. This implies that there is a difference of level of windbreak with different porosities; however, distance of windbreak effect is same at the same height of sand barrier. As a result of comparison between porosity of sand barrier on the ground and installation cost in each sand barrier with various heights and porosities (16 combinations), 0.4m and 0.5m height sand barriers describe highest economical efficiency. Within two variables, we concluded that height has a higher impact on windbreak effect than porosity.

• Nanomaterials
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• v.12 no.5
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• pp.827-838
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• 2022

Controlling the Schottky barrier height (φ_B) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β-Ga₂O₃ semiconductor was investigated using numerical simulation. We confirmed that the simulation-based on Ni workfunction, interfacial trap concentration, and surface electron affinity was well-matched with the actual device characterization. Insertion of the graphene layer achieved a remarkable decrease in the barrier height (φ_B), from 1.32 to 0.43 eV, and in the series resistance (R_s), from 60.3 to 2.90 mΩ.cm². However, the saturation current (J_s) increased from 1.26×10^-11 to 8.3×10^-7(A/cm²). The effects of a graphene bandgap and workfunction were studied. With an increase in the graphene workfunction and bandgap, the Schottky barrier height and series resistance increased and the saturation current decreased. This behavior was related to the tunneling rate variations in the graphene layer. Therefore, control of Schottky barrier diode output parameters was achieved by monitoring the tunneling rate in the graphene layer (through the control of the bandgap) and by controlling the Schottky barrier height according to the Schottky-Mott role (through the control of the workfunction). Furthermore, a zero-bandgap and low-workfunction graphene layer behaves as an ohmic contact, which is in agreement with published results.

• Journal of the Korean Graphic Arts Communication Society
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• v.21 no.2
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• pp.67-74
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• 2003

Barrier ribs for PDP(plasma display panel) are commonly utilized to have uniform height and width and to prevent opical crosstalk between adjacent cells. The requirements for such barrier ribs are uniform height and shape, low outgassing rate and low porosity, high aspect ratio, and fine resolution. In this study, we are studied about that to make efficiency of material and high quality barrier ribs for PDP. As a result, could got high barrier ribs of $140{\mu}m$ evenly in 1th phenomenon using watersoluble UV curing resin and know that flatness of upper part is also very good.

• Korean Journal of Materials Research
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• v.26 no.10
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• pp.556-560
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• 2016

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.5
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• pp.712-718
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• 1986

A shallow n+ layer of implanted phosphorus was used to lower the barrier height of PtSinSi schottky diodes. The reduction of barrier height of the forward turn-on voltages from 400mV to 180mV of the forward was followed by implantation of phosphorus at 35KeV with an ion dose of 8.0x10**12 atoms/cm\ulcornerand was activated at 925\ulcorner for 30min in dry O2. The test result showed that, as the ion-implanted dose increased, the forward turn-on voltage and reverse breakdown voltage were linearly decreased, but the saturation current and ideality factor(n) were linearly increased.