• Title/Summary/Keyword: Bandgap engineering

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Role of modifiers on the structural, mechanical, optical and radiation protection attributes of Eu3+ incorporated multi constituent glasses

  • Poojha, M.K. Komal;Marimuthu, K.;Teresa, P. Evangelin;Almousa, Nouf;Sayyed, M.I.
    • Nuclear Engineering and Technology
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    • v.54 no.10
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    • pp.3841-3848
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    • 2022
  • The effect of modifiers on the optical features and radiation defying ability of the Eu3+ ions doped multi constituent glasses was examined. XRD has established the amorphous nature of the specimen. The presence of various functional/fundamental groups in the present glasses was analyzed through FTIR spectra. The physical, structural and elastic traits of the glasses were explored. The variation in the structural compactness of the glass structure according to the incorporated modifier was enlightened to describe their suitability for a better shielding media. For the examined glasses, the metallization criterion value varied in the range 0.613-0.692, indicating the non-metallic character of the glasses with possible nonlinear optical applications. The computed elastic moduli expose the Li-containing glass (BTLi:Eu) to be tightly packed and rigid, which is a requirement for a better shielding channel. Furthermore, the optical bandgap and the Urbach energy values are calculated based on the optical absorption spectra. The evaluated bonding parameters revealed the nature of the fabricated glasses covalent. In addition, we investigated the radiation attenuation attributes of the prepared Eu3+ ions doped multi constituent glasses using Phy-X software. We determined the linear attenuation coefficient (LAC) and reported the influence of the five oxides Li2O3, CaO, BaO, SrO, and ZnO on the LAC values. The LAC varied between 0.433 and 0.549 cm-1 at 0.284 MeV. The 39B2O3-25TeO2-15Li2O3-10Na2O-10K2O-1Eu2O3 glass has a much smaller LAC than the other glasses.

Influence of Co incorporation on morphological, structural, and optical properties of ZnO nanorods synthesized by chemical bath deposition

  • Iwan Sugihartono;Novan Purwanto;Desy Mekarsari;Isnaeni;Markus Diantoro;Riser Fahdiran;Yoga Divayana;Anggara Budi Susila
    • Advances in materials Research
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    • v.12 no.3
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    • pp.179-192
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    • 2023
  • We have studied the structural and optical properties of the non-doped and Co 0.08 at.%, Co 0.02 at.%, and Co 0.11 at.% doped ZnO nanorods (NRs) synthesized using the simple low-temperature chemical bath deposition (CBD) method at 95℃ for 2 hours. The scanning electron microscope (SEM) images confirmed the morphology of the ZnO NRs are affected by Co incorporation. As observed, the Co 0.08 at.% doped ZnO NRs have a larger dimension with an average diameter of 153.4 nm. According to the International Centre for Diffraction Data (ICDD) number #00-036-1451, the x-ray diffraction (XRD) pattern of non-doped and Co-doped ZnO NRs with the preferred orientation of ZnO NRs in the (002) plane possess polycrystalline hexagonal wurtzite structure with the space group P63mc. Optical absorbance indicates the Co 0.08 at.% doped ZnO NRs have stronger and blueshift bandgap energy (3.104 ev). The room temperature photoluminescence (PL) spectra of ZnO NRs exhibited excitonicrelates ultraviolet (UV) and defect-related green band (GB) emissions. By calculating the UV/GB intensity, the Co 0.08 at.% is the proper atomic percentage to have fewer intrinsic defects. We predict that Co-doped ZnO NRs induce a blueshift of near band edge (NBE) emission due to the Burstein-Moss effect. Meanwhile, the redshift of NBE emission is attributed to the modification of the lattice dimensions and exchange energy.

Analytical Method for Aperiodic EBG Island in Power Distribution Network of High-Speed Packages and PCBs (비주기 전자기 밴드갭이 국소 배치된 고속 패키지/PCB 전원분배망 해석 방안)

  • Myunghoi Kim
    • Journal of Advanced Navigation Technology
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    • v.28 no.1
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    • pp.129-135
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    • 2024
  • In this paper, an analytical approach for the design and analysis of an aperiodic electromagnetic bandgap (EBG)-based power distribution network (PDN) in high-speed integrated-circuit (IC) packages and printed circuit boards (PCBs) is proposed. Aperiodic EBG is an effective method to solve the noise problem of high-speed IC packages and PCBs. However, its analysis becomes challenging due to increased computation time. To overcome the problem, the proposed analytical method entails deriving impedance parameters for EBG island and the overall PDN, which includes locally placed EBG structures. To validate the proposed method, a test vehicle is fabricated, demonstrating good agreement with the measurements. Significantly, the proposed analytical method reduces computation time by 99.7 %compared to the full-wave simulation method.

Electrical Properties for Enhanced Band Offset and Tunneling with a-SiOx:H/a-si Structure (a-SiOx:H/c-Si 구조를 통한 향상된 밴드 오프셋과 터널링에 대한 전기적 특성 고찰)

  • Kim, Hongrae;Pham, Duy phong;Oh, Donghyun;Park, Somin;Rabelo, Matheus;Kim, Youngkuk;Yi, Junsin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.4
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    • pp.251-255
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    • 2021
  • a-Si is commonly considered as a primary candidate for the formation of passivation layer in heterojunction (HIT) solar cells. However, there are some problems when using this material such as significant losses due to recombination and parasitic absorption. To reduce these problems, a wide bandgap material is needed. A wide bandgap has a positive influence on effective transmittance, reduction of the parasitic absorption, and prevention of unnecessary epitaxial growth. In this paper, the adoption of a-SiOx:H as the intrinsic layer was discussed. To increase lifetime and conductivity, oxygen concentration control is crucial because it is correlated with the thickness, bonding defect, interface density (Dit), and band offset. A thick oxygen-rich layer causes the lifetime and the implied open-circuit voltage to drop. Furthermore the thicker the layer gets, the more free hydrogen atoms are etched in thin films, which worsens the passivation quality and the efficiency of solar cells. Previous studies revealed that the lifetime and the implied voltage decreased when the a-SiOx thickness went beyond around 9 nm. In addition to this, oxygen acted as a defect in the intrinsic layer. The Dit increased up to an oxygen rate on the order of 8%. Beyond 8%, the Dit was constant. By controlling the oxygen concentration properly and achieving a thin layer, high-efficiency HIT solar cells can be fabricated.

UV emission characterization of ZnO thin films depending on the variation of oxygen pressure (분위기 산소압변화에 따른 ZnO박막의 UV발광 특성분석)

  • Bae, Sang-Hyuck;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1523-1525
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    • 1999
  • ZnO is a wide-bandgap II-VI semiconductor and has a variety of potential application. ZnO exhibits good piezoelectric, photoelectric and optic properties, and is good for a electroluminescence device. ZnO films have been deposited at (0001) shappire by PLD technique. Chamber was evacuated by turbomolecular pump to a base pressure of $1{\times}10^{-6}$ Torr Nd:YAG pulsed laser was operated at ${\lambda}=355nm$. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from $200^{\circ}C$ to $700^{\circ}C$. At aleady works, UV emission and green-yellow PL was observed. In this work, ZnO films showed UV, violet, green and yellow emissions. UV emission was enhanced by increasing partial oxygen pressure. We investigated relationship between partial oxygen pressure and UV emission.

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Ferromagnetic Properties in Diluted Magnetic Semiconductors (Al,Mn)N grown by PEMBE

  • Ham, Moon-Ho;Myoung, Jae-Min
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.1
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    • pp.12-15
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    • 2006
  • We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

A Novel Oscillator Utilizing Corrugated CPW EBG Structure with Reduced Phase Noise and Improved Harmonic Characteristics (Corrugated CPW EBG 구조를 이용한 낮은 위상잡음과 향상된 고조파 특성을 갖는 새로운 형태의 발진기)

  • Hwang, Cheol-Gyu;Myung, Noh-Hoon
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2005.11a
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    • pp.101-106
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    • 2005
  • This paper presents a new microwave oscillator incorporating a corrugated coplanar waveguide (CCPW) electromagnetic bandgap (EBG) structure as its terminating resonance component. The use of a compact CCPW EBG structure was effective in reducing the phase noise and improving the harmonic characteristics of the microwave oscillator circuit without additional backside processing and drastic size increment. The fully planar CCPW oscillator oscillating at the frequency of 5.41 GHz showed a phase noise characteristic of -90.7 dBc/Hz at 100kHz offset and a second harmonic suppression of 42.67 dB.

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Nano stamp fabrication for photonic crystal waveguides (나노 광소자용 나노스탬프 제조공정 연구)

  • Jeong, Myung-Yung;Jung, Une-Teak;Kim, Chang-Seok
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.12 s.177
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    • pp.16-21
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    • 2005
  • Photonic crystals, periodic structure with a high refractive index contrast modulation, have recently become very interesting platform for the manipulation of light. The existence of a photonic bandgap, a frequency range in which the propagation of light is prevented in all directions, makes photonic crystal very useful in application where the spatial localization of light is required, for example waveguide, beam splitter, and cavity. However, the fabrication of 3 dimensional photonic crystals is still difficult process. A concept that has recently attracted a lot of attention is a planar photonic crystal based on a dielectric membrane, suspended in the air and perforated with two dimensional lattice of hole. The fabrication of Si master with pillar structure using hot embossing process is investigated for two dimensional, low-index-contrast photonic crystal waveguide. From our research we show that the multiple stamp copy process proved to be feasible and useful.

Reorientation of Colloidal Crystalline Domains by a Thinning Meniscus

  • Im, Sang-Hyuk;Park, O-Ok
    • Macromolecular Research
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    • v.12 no.2
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    • pp.189-194
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    • 2004
  • When water is evaporated quickly from a water-based colloidal suspension, colloidal particles protrude from the water surface, distorting it and generating lateral capillary forces between the colloidal particles. The protruded colloidal particles are then assembled into ordered colloidal crystalline domains that float on the water surface on account of their having a lower effective density than water. These colloidal crystal domains then assemble together by lateral capillary force and convective flow; the generated colloidal crystal has grain boundaries. The single domain size of the colloidal crystal could be controlled, to some extent, by changing the rate of water evaporation, but it seems very difficult to fabricate a single crystal over a large area of the water's surface without reorienting each colloidal crystal domain. To reorient such colloidal crystal domains, a glass plate was dipped into the colloidal suspension at a tilted angle because the meniscus (airwaterglass plate interface) is pinned and thinned by further water evaporation. The thinning meniscus generated a shear force and reoriented the colloidal crystalline domains into a single domain.

Effect of Hydrazine as a Complex Agent on the Growth of ZnS Thin Film by Using Chemical Bath Deposition (CBD) (CBD법에 의한 ZnS 박막 성장의 하이드라진 효과)

  • Lee, Cha Ran;Kim, Jeha
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.3
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    • pp.177-181
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    • 2018
  • We prepared ZnS thin films via chemical bath deposition (CBD) in an aqueous solution of ammonia ($NH_3$) and hydrazine ($N_2H_4$). The composition ratio of hydrazine used was 0%, 17%, 22%, 29%, or 50%. We investigated the effects of hydrazine and ammonia on the growth, and the structural and optical properties of ZnS in terms of surface uniformity, voids, and grain size. We found that during the growth of ZnS films, hydrazine was very effective for improving the surface morphology and layer uniformity with fast layer formation, while it had no effect on the bandgap energy, $E_g$.