Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

UV emission characterization of ZnO thin films depending on the variation of oxygen pressure

분위기 산소압변화에 따른 ZnO박막의 UV발광 특성분석

  • Bae, Sang-Hyuck (Department of Electrical Engineering Yonsei University) ;
  • Lee, Sang-Yeol (Department of Electrical Engineering Yonsei University)
  • 배상혁 (연세대학교 전기공학과) ;
  • 이상렬 (연세대학교 전기공학과)
  • Published : 1999.07.19
Download PDF
⟨ Previous Next ⟩

Abstract

ZnO is a wide-bandgap II-VI semiconductor and has a variety of potential application. ZnO exhibits good piezoelectric, photoelectric and optic properties, and is good for a electroluminescence device. ZnO films have been deposited at (0001) shappire by PLD technique. Chamber was evacuated by turbomolecular pump to a base pressure of $1{\times}10^{-6}$ Torr Nd:YAG pulsed laser was operated at ${\lambda}=355nm$. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from $200^{\circ}C$ to $700^{\circ}C$. At aleady works, UV emission and green-yellow PL was observed. In this work, ZnO films showed UV, violet, green and yellow emissions. UV emission was enhanced by increasing partial oxygen pressure. We investigated relationship between partial oxygen pressure and UV emission.

Keywords