Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Ferromagnetic Properties in Diluted Magnetic Semiconductors (Al,Mn)N grown by PEMBE

  • Ham, Moon-Ho (Information & Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Myoung, Jae-Min (Information & Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University)
  • Published : 2006.02.01
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Abstract

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

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References

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