• 반도체디스플레이기술학회지
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• 제9권1호
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• pp.35-40
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• 2010

We have investigated the effects of hydrogen injection via in-situ gas addition ($O_2$, $H_2$, or $O_2$ + $H_2$ gas) and plasma post-treatment (Ar or Ar + H plasma) on material properties of ZnO that is considered to be as a channel layer in transparent thin film transistors. The variations in the electrical resistivity, optical transmittance and bandgap energy, and crystal quality of ZnO thin films were characterized in terms of the methods and conditions used in hydrogen injection. The resistivity was significantly decreased by injection of hydrogen; approximately $10^6\;{\Omega}cm$ for as-grown, $1.2\;{\times}\;10^2\;{\Omega}cm$ for in-situ with $O_2/H_2\;=\;2/3$ addition, and $0.1\;{\Omega}cm$ after Ar + H plasma treatment of 90 min. The average transmittance of ZnO films measured at a wavelength of 400-700 nm was gradually increased by increasing the post-treatment time in Ar + H plasma. The optical bandgap energy of ZnO films was almost monotonically increased by decreasing the $O_2/H_2$ ratio in in-situ gas addition or by increasing the post-treatment time in Ar + H plasma, while the post-treatment using Ar plasma hardly affected the bandgap energy. The role of hydrogen in ZnO was discussed by considering the creation and annihilation of oxygen vacancies as well as the formation of shallow donors by hydrogen.

• Journal of information and communication convergence engineering
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• 제7권2호
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• pp.215-218
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• 2009

In this paper, temperature stable current and voltage references using simple CMOS bias circuit are proposed. To obtain temperature stable characteristics of bias circuit a bandgap reference concept is used in a conventional circuit. The parasitic bipolar transistors or MOS transistors having different threshold voltage are required in a bandgap reference. Thereby the chip area increase or the extra CMOS process is required compared to a standard CMOS process. The proposed reference circuit can be integrated on a single chip by a standard CMOS process without the extra CMOS process. From the simulation results, the reference current variation is less than ${\pm}$0.44% over a temperature range from - $20^{\circ}C$ to $80^{\circ}C$. And the voltage variation is from - 0.02% to 0.1%.

• ETRI Journal
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• 제31권2호
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• pp.201-208
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• 2009

This paper proposes a spiral-shaped power island structure that can effectively suppress simultaneous switching noise (SSN) when the power plane drives high-speed integrated circuits in a small area. In addition, a new technique is presented which greatly improves the resonance peaks in a stopband by utilizing ${\lambda}$/4 open stubs on a conventional periodic electromagnetic bandgap (EBG) power plane. Both proposed structures are simulated numerically and experimentally verified using commercially available 3D electromagnetic field simulation software. The results demonstrate that they achieve better SSN suppression performance than conventional periodic EBG structures.

• 대한화장품학회지
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• 제49권2호
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• pp.159-167
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• 2023

이산화티타늄(TiO₂)은 일반적으로 선크림 제제에 사용되어 빛의 물리적 산란 작용에 의해 피부 표면을 보호하고 유해한 자외선(UV)의 침투를 방지한다. 그러나 불활성 미네랄 성분으로 인해 피부에 사용시 백탁현상을 유발할 수 있다는 단점이 있다. 또한 백탁현상을 없애기 위해 TiO₂ 입자를 나노화 하면 가시광선 투과율을 증가시켜 백탁 현상을 감소시키지만 알레르기 염증과 같은 심각한 피부 트러블을 유발할 수 있다. 이러한 문제를 극복하기 위해 본 연구에서는 산소 결핍 구조 및 질소량 제어를 이용하여 TiO₂의 밴드갭을 제어하고, 결과적으로 피부 맞춤형 유색 TiO₂를 개발하였다. 이는 백탁 현상을 감소시킬 수 있을 뿐만 아니라 활성산소를 유발하여 피부 노화를 촉진시키는 것으로 알려진 블루라이트를 효과적으로 차단할 수 있다. 본 연구에서 제안된 밴드갭 제어 TiO₂ 화합물은 저자극이고 스펙트럼이 넓으며 환경친화적이다. 또한 이는 자외선 차단제의 sun protection factor (SPF)를 획기적으로 향상시켜 블루라이트 차단 제품에 적용할 수 있을 것으로 기대된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.51-53
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• 2005

$Zn_{1-x}Cd_xO$ thin films were grown on (0001) sapphire substrates by pulsed laser deposition. The energy bandgap of $Zn_{1-x}Cd_xO$ films decreases withincreasing Cd content. An increase of Cd content also leads to the emission broadening and degraded crystallinity. The absorption edge and ultraviolet emission peak shift to lower energy from 3.357 eV to 3.295 eV and 3.338 eV to 3.157 eV, respectively, with increasing Cd content from 0.3% to 3%. The Stokes' shift between the absorption and emission indicates the increase of localization of exciton with Cd content.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2013년도 춘계학술대회 논문집
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• pp.733-734
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• 2013

• Advances in nano research
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• 제2권3호
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• pp.157-172
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• 2014

The three-dimensional Nano-Electronic Modeling toolkit (NEMO 3-D) is an open source software package that allows the atomistic calculation of single-particle electronic states and optical response of various semiconductor structures including bulk materials, quantum dots, impurities, quantum wires, quantum wells and nanocrystals containing millions of atoms. This paper, first, describes a software module introduced in the NEMO 3-D toolkit for the calculation of electronic bandstructure and interband optical transitions in nanowires having wurtzite crystal symmetry. The energetics (Hamiltonian) of the quantum system under study is described via the tight-binding (TB) formalism (including $sp^3$, $sp^3s^*$ and $sp^3d^5s^*$ models as appropriate). Emphasis has been given in the treatment of surface atoms that, if left unpassivated, can lead to the creation of energy states within the bandgap of the sample. Furthermore, the developed software has been validated via the calculation of: a) modulation of the energy bandgap and the effective masses in [0001] oriented wurtzite nanowires as compared to the experimentally reported values in bulk structures, and b) the localization of wavefunctions and the optical anisotropy in GaN/AlN disk-in-wire nanowires.

• 한국전기전자재료학회논문지
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• 제23권9호
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• pp.671-675
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• 2010

Gallium nitride (GaN), wide bandgap semiconductor, has attracted much attention because they are projected to have much better performance than silicon. In this paper, effects of design parameters change of GaN power static induction transistor (SIT) on the electrical characteristics (breakdown voltage, on resistance) were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get power GaN SIT that has 600 V class breakdown voltage. As a result, we could get optimized 600 V class power GaN SIT that has higher breakdown voltage and lower On resistance with a thin (a several micro-meters) thickness of the channel layer.

• 대한전자공학회논문지TC
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• 제37권9호
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• pp.38-48
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• 2000

본 논문에서는 넓은 저지대역과, 저지대역내에 결함 모드를 포함할 수 있는 포토닉 밴드갭(PBG) 구조에 관하여 연구하였다. PBG 구조에서 λg/4 변환기를 이용하여 주기적인 저지대역 중에서 특정 저지대역을 제거할 수 있었으며, 제거된 저지대역의 중심주파수에 해당하는 주기를 가지는 일반적인 PBG 구조를 직렬로 연결함으로써 넓은 저지대역을 구현하였다. 이것은 저지대역의 겹침 문제를 효과적으로 해결한 것으로써 넓은 저지대역 안에서 결함 모드를 이용할 수 있게 되었으며, 넓은 저지대역내에서 다중 스위치의 구현을 가능하게 하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.498-501
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• 2005

Photonic crystals, periodic structure with a high refractive index contrast modulation, have recently become very interesting platform for manipulation of light. The existence of a photonic bandgap, a frequency range in which propagation of light is prevented in all direction, makes photonic crystal very useful in application where spatial localization of light is required for waveguide, beam splitter, and cavity. But fabrication of 3 dimensional photonic crystal is still difficult process. a concept that has recently attracted a lot of attention is a planar photonic crystal based on a dielectric membrane, suspended in the air, and perforated with 2 dimensional lattice of hole. We show that the polymer slabs suspended in air with triangular lattice of air hole can exhibit the in-plane photonic bandgap for TE-like modes. The fabrication of Si master with pillar structure using hot embossing process was investigated for 2 dimensional low-index-contrast photonic crystal waveguide.