• Korean Journal of Metals and Materials
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• v.49 no.7
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• pp.583-588
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• 2011

$Cd_xZn_{1-x}O$ thin films were grown on quartz substrates by using the sol-gel spin-coating method. The mole fraction, x, of the $Cd_xZn_{1-x}O$ thin films was controlled from 0 to 1 by changes in the content ratio of the cadmium acetate dehydrate [$Cd{(CH_3COO)}_2{\cdot}2H_2O$] and zinc acetate dehydrate [$Zn{(CH_3COO)}_2{\cdot}2H_2O$]. The effects of the mole fraction on the morphological, structural, and optical properties of the $Cd_xZn_{1-x}O$ thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-visible spectroscopy. The $Cd_xZn_{1-x}O$ thin films exhibited the polygonal surface morphology and their grain size was increased ranging from 42.1 to 63.9 nm with the increase in the mole fraction. It was observed that the absorption bandgap of the $Cd_xZn_{1-x}O$ thin films decreased from 3.25 to 2.16 eV as the mole fraction increased and the Urbach energy ($E_U$) values changed inversely to the optical bandgap of the $Cd_xZn_{1-x}O$ thin films.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.10
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• pp.1370-1374
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• 2018

A heterojunction $SnS_2/p-Si$ photodetector was fabricated by RF magnetron sputtering system. $SnS_2$ was formed with 2-inch $SnS_2$ target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at $500^{\circ}C$ to enhance the contact quality. 2D material such as $SnS_2$, MoS2 is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, $SnS_2$ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of $SnS_2$ offers the advantage for the large on-off current ratio and low leakage current. The $SnS_2/p-Si$ photodetector clearly shows the current rectification when the thickness of $SnS_2$ is 80 nm compared to when it is 135 nm. The highest photocurrent is $19.73{\mu}A$ at the wavelength of 740 nm with $SnS_2$ thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.5
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• pp.694-700
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• 1999

In this paper, we studied the design of power divider using the slow-wave effect of Photonic Bandgap structure, which is etched on the ground plane. The proposed PBG structure can provides the changing of the characteristic impedance of the transmission line and the group delay velocity characteristic. Therefore we can make wider width than the width of conventional transmission line and decrease the length of transmission line. We presented the application for power divider using the characteristic impedance and electrical length extracted from scattering parameter. As adding proposed defect units, the effect of defect is studied. The experimental results show good agreements with the simulated results.

• ETRI Journal
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• v.32 no.2
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• pp.265-272
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• 2010

To supply a power distribution network with stable power in a high-speed mixed mode system, simultaneous switching noise caused at the multilayer PCB and package structures needs to be sufficiently suppressed. The uni-planar compact electromagnetic bandgap (UC-EBG) structure is well known as a promising solution to suppress the power noise and isolate noise-sensitive analog/RF circuits from a noisy digital circuit. However, a typical UC-EBG structure has several severe problems, such as a limitation in the stop band's lower cutoff frequency and signal quality degradation. To make up for the defects of a conventional EBG structure, a partially located EBG structure with decoupling capacitors is proposed in this paper as a means of both suppressing the power noise propagation and minimizing the effects of the perforated reference plane on the signal quality. The proposed structure is validated and investigated through simulation and measurement in both frequency and time domains.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.584-588
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• 2011

The ZnO thin films doped with Ga and Ge (GZO:Ge) were prepared on glass substrate using RF sputtering system. Structural, morphological and optical properties of the films deposited in different temperatures were studied. Proportion of the element of using target was 97 wt% ZnO, 2.5 wt% Ga and 0.5 wt% Ge with 99.99% highly purity. Structural properties of the samples deposited in different temperatures with 200 w RF power were investigated by field emission scanning electron microscopy, FE-SEM images and x-ray diffraction XRD analysis. Atomic force microscopy, AFM images were able to show the grain scales and surface roughness of each film rather clearly than SEM images. it was showed that increasing temperature have better surface smoothness by FE-SEM and AFM images. Transmittance study using UV-Vis spectrometer showed that all the samples have highly transparent in visible region (300~800 nm). In addition, it can be able to calculate bandgap energy from absorbance data obtained with transmittance. The hall resistivity, mobility, and optical band gap energy are influenced by the temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.115-118
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• 2017

Highly photosensitive and wide bandgap amorphous silicon oxide (a-$SiO_x$:H) films were developed at low temperature ranges ($100{\sim}150^{\circ}C$) with employing plasma-enhanced chemical vapor deposition by optimizing $H_2/SiH_4$ gas ratio and $CO_2$ flow. Photosensitivity more than $10^5$ and wide bandgap (1.81~1.85 eV) properties were used for making the a-$SiO_x$:H thin film solar cells, which exhibited a high open circuit voltage of 0.987 V at the substrate temperature of $100^{\circ}C$. In addition, a power conversion efficiency of 6.87% for the cell could be improved up to 7.77% by employing a new n-type nc-$SiO_x$:H/ZnO:Al/Ag triple back-reflector that offers better short circuit currents in the thin film photovoltaic devices.

• Environmental Engineering Research
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• v.24 no.4
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• pp.566-571
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• 2019

One-pot hydrothermal route was adopted to synthesize Al:BiVO₄, at 4 h and 8 h reaction durations, by adding 1% aluminiumoxide powder (w/v) to the precursors. The products were investigated using several characterization techniques that conform a significant morphological change and a decrease in bandgap energy of the materials upon Al modification of scheelite monoclinic bismuth vanadate matrix at both hydrothermal durations. Antibacterial experiments were performed against methicillin-resistant Staphylococcus aureus in visible light condition to harness the photoxidation property of Al-doped BiVO₄ and compare to that of unaltered BiVO₄. Minimum inhibitory concentration of the synthesized materials was identified. The results indicate that Al-doping on BiVO₄ has a significant effect on its photocatalytic antibacterial performance. Al:BiVO₄ synthesized at 8 h hydrothermal treatment parades excellent sunlight-driven photocatalysis compared to the one synthesized at 4 h.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.760-765
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• 2014

MgZnO has attracted a lot of attention for flexible device. In the flexible substrate, the crystal structure of the thin films as well as the surface morphology is not good. Therefore, in this study, we studied on the effects of the oxygen pressure on the structure and crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films deposited on PES substrate by using pulsed laser deposition. We used X-ray diffraction and atomic force microscopy in order to observe the structural characteristics of $Mg_{0.3}Zn_{0.7}O$ thin films. The crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films with increasing temperature was improved, Grain size and RMS of the films were increased. UV-visible spectrophotometer was used to get the band gap energy and transmittance. $Mg_{0.3}Zn_{0.7}O$ thin films showed high transmittance over 90% in the visible region. As increased working pressure from 30 mTorr to 200 mTorr, the bandgap energy of $Mg_{0.3}Zn_{0.7}O$ thin film were decreased from 3.59 eV to 3.50 eV.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.12
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• pp.39-48
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• 2001

We have studied the design of the photonic bandgap (PBG) structure on the microstrip line that can effectively control the fractional bandwidth of the passband formed in the stopband by adding the stub in the cell of the microstrip PBG structure. As the length of the stub increases, the cutoff frequency and the center frequency of the stopband are decreased, while the bandwidth of the stopband is increased. We have also found that the fractional bandwidth of the passband formed in stopband by the introduction of defect decreases as the stub length is increased. These results mean that adding the stub in the normal PBG structure is an effective way to control the fractional bandwidth. As an application example, we have implemented a microwave duplexer using the proposed structure.

• Journal of Powder Materials
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• v.26 no.3
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• pp.237-242
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• 2019

In this study, ultrasonic spray pyrolysis combined with salt-assisted decomposition, a process that adds sodium nitrate ($NaNO_3$) into a titanium precursor solution, is used to synthesize nanosized titanium dioxide ($TiO_2$) particles. The added $NaNO_3$ prevents the agglomeration of the primary nanoparticles in the pyrolysis process. The nanoparticles are obtained after a washing process, removing $NaNO_3$ and NaF from the secondary particles, which consist of the salts and $TiO_2$ nanoparticles. The effects of pyrolysis temperature on the size, crystallographic characteristics, and bandgap energy of the synthesized nanoparticles are systematically investigated. The synthesized $TiO_2$ nanoparticles have a size of approximately 2-10 nm a bandgap energy of 3.1-3.25 eV, depending on the synthetic temperature. These differences in properties affect the photocatalytic activities of the synthesized $TiO_2$ nanoparticles.