• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.75-75
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• 2009

반도체 및 전자기기 산업에 있어 비활성메모리 (NVM)는 중요한 부운을 차지한다. NVM은 디스플레이 분야에 많은 기여를 하고 있으며, 특히 AMOLED에 적용이 가능하여 온도에 따라 변하는 구동 전류, 휘도, color balance에 따른 문제를 해결하는데 큰 역할을 한다. 본 연구는 NNN 구조에서 터널 층을 $SiN_X$ 박막에서 $SiO_XN_Y$ 박막으로 대체하기위한 $SiO_XN_Y$ 박막을 이용한 NNO구조의 NVM에 관한 연구이다. 이로 인하여 보다 얇으면서 우수한 절연 특성을 가지는 박막을 사용함으로써 실리콘 층으로부터 전하의 터널링 효과를 높여 전하 저장 정도를 높이고, 메모리 retention 특성을 향상시키는 터널 박막을 성장 시킬 수 있다. 최적의 NNO 구조의 메모리 소자를 제작하기 위하여 MIS 상태로 다양한 조건의 실험을 진행하였다. 처음으로 블로킹 박막의 두께를 조절하는 실험을 진행하여 최적 두께의 블로킹 박막을 찾았으며, 다음으로 전하 저장 박막의 band gap을 조절하여 최적의 band gap을 갖는 $SiN_X$ 박막을 찾았다. 마지막으로 최적두께의 $SiO_XN_Y$박막을 찾는 실험을 진행하였다. MIS 상태에서의 최적의 NNO 구조를 이용하여 유리 기판 상에 NNO 구조의 NVM 소자를 제작하였다. 제작된 메모리 소자는 문턱전압이 -1.48 V로 낮은 구동전압을 보였으며, I-V의 slope 값 역시 약 0.3 V/decade로 낮은 값을 보인다. 전류 점멸비($I_{ON}/I_{OFF}$)는 약 $5\times10^6$로 무수하였다. $SiN_X$의 band gap을 다양하게 조절하여 band gap 차이에 의한 밴드 저장 방식을 사용하였다. 또한 $SiN_X$은 전하를 전하 포획(trap) 방식으로 저장하기 때문에 본 연구에서의 메모리 소자는 밴드 저장 방식과 전하 포획 방식을 동시에 사용하여 우수한 메모리 특성을 갖게 될 것으로 기대된다. 우수한 비휘발성 메모리 소자를 제작하기 위해 메모리 특성에 많은 영향을 주는 터널 박막과 전하 저장 층을 다양화하여 소자를 제작하였다. 터널 박막은 터널링이 일어나기 쉽도록 최대한 얇으며, 전하 저장 층으로부터 기판으로 전하가 쉽게 빠져나오지 못하도록 절연 특성이 우수한 박막을 사용하였다. 전하 저장 층은 band gap이 작으며 trap 공간이 많은 박막을 사용하였다.

• Korean Journal of Materials Research
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• v.9 no.4
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• pp.349-354
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• 1999

The temperature dependences of the Hall coefficient, carrier mobility, electrical resistivity, Seebeck coefficient, thermal conductivity, and figure-of-merit of the undoped and $CdI_2$-doped 90% $Bi_2Te_3-10% Bi_2Se_3$, single crystals, grown by the Bridgman method, have been characterized at temperatures ranging from 77K to 600K. The saturated carrier concentration and degenerate temperature of the undoped 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal are $5.85\times10_{18}cm^{-3}$ and 127K, respectively. The scattering parameter of the 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal is determined to b -0.23, and the electron mobility to hole mobility ratio ($\mu_e/\mu_h)$ is 1.45. The bandgap energy at 0K of the 90% <$Bi_2Te_3-10% Bi_2Se_3$ single crystal is 0.200 eV. Adding $CdI_2$as a donor dopant, a maximum figure-of-merit of $3.2\times10^{-3}/K$$CdI_2$-doped specimen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Bulletin of the Korean Chemical Society
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• v.32 no.2
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• pp.417-423
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• 2011

A series of new quinoxaline-based thiophene copolymers (PQx2T, PQx4T, and PQx6T) was synthesized via Yamamoto and Stille coupling reactions. The $M_ws$ of PQx2T, PQx4T, and PQx6T were found to be 20,000, 12,000, and 29,000, with polydispersity indices of 2.0, 1.2, and 1.1, respectively. The UV-visible absorption spectra of the polymers showed two distinct absorption peaks in the ranges 350 - 460 nm and 560 - 600 nm, which arose from the ${\pi}-{\pi}^*$ transition of oligothiophene units and intramolecular charge transfer (ICT) between a quinoxaline acceptor and thiophene donor. The HOMO levels of the polymer ranged from -5.37 to -5.17 eV and the LUMO levels ranged from -3.67 to -3.45 eV. The electrochemical bandgaps of PQx2T, PQx4T, and PQx6T were 1.70, 1.71, and 1.72 eV, respectively, thus yielding low bandgap behavior. PQx2T, PQx4T, and PQx6T had open circuit voltages of 0.58, 0.42, and 0.47 V, and short circuit current densities of 2.9, 5.29 and 9.05 mA/$cm^2$, respectively, when $PC_{71}BM$ was used as an acceptor. For the solar cells with PQx2T-PQx6T:$PC_{71}BM$ (1:3) blends, an increase in performance was observed in going from PQx2T to PQx6T. The power conversion efficiencies of PQx2T, PQx4T, and PQx6T devices were found to be 0.69%, 0.73%, and 1.80% under AM 1.5 G (100 mW/$cm^2$) illumination.

• Journal of Adhesion and Interface
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• v.21 no.3
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• pp.107-112
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• 2020

Recently, the atomically thin transition-metal dichalcogenide (TMD) semiconductors have attracted much attention owing to their remarkable properties such as tunable bandgap with high carrier mobility, flexibility, transparency, etc. However, because these TMD materials have a significant drawback that they are easily degraded in an ambient environment, various attempts have been made to improve chemical stability. In this research article, I report a method to improve the air stability of WSe₂ one of the TMD materials via surface passivation with an h-BN insulator, and its application to field-effect transistors (FETs). With a modified hot pick-up transfer technique, a vertical heterostructure of h-BN/WSe₂ was successfully made, and then the structure was used to fabricate the top-gate bottom-contact FETs. The fabricated WSe₂-based FET exhibited not only excellent air stability, but also high hole mobility of 150 ㎠/Vs at room temperature, on/off current ratios up to 3×10⁶, and 192 mV/decade of subthreshold swing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.6
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• pp.275-281
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• 2017

AlN is a promising material for wide band gap and high-frequency electronics device due to its wide bandgap and high thermal conductivity. AlN has advantages as materials for power semiconductors with a larger breakdown field, and a smaller specific on-resistance at high voltage. The growth of a p-type AlN epilayer with high conductivity is important for a manufacturing an AlN-based applications. In this paper, Mg doped AlN epilayers were grown by a mixed-source HVPE. Al and Mg mixture were used as source materials for the growth of Mg-doped AlN epilayers. Mg concentration in the AlN was controlled by modulating the quantity of Mg source in the mixed-source. Surface morphology and crystalline structure of AlN epilayers with different Mg concentrations were characterized by FE-SEM and HR-XRD. XPS spectra of the Mg-doped AlN epilayers demonstrated that Mg was doped successfully into the AlN epilayer by the mixed-source HVPE.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.1-8
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• 2005

A $0.35\mu$m SiGe BiCMOS fabrication process has been timely developed, which is aiming at wireless RF ICs development and fast growing SiGe RF market. With non-selective SiGe epilayer, SiGe HBTs in this process used trapezoidal Ge base profile for the enhanced AC performance via Ge induced bandgap niuoin. The characteristics of hFE 100, $f_{T}\;45GHz,\;F_{max}\;50GHz,\;NF_{min}\;0.8dB$ have been obtained by optimizing not only SiGe base profile but also RTA condition after emitter polysilicon deposition, which enables the SiGe technology competition against the worldwide cutting edge SiGe BiCMOS technology. In addition, the process incorporates the CMOS logic, which is fully compatible with $0.35\mu$m pure logic technology. High Q passive elements are also provided for high precision analog circuit designs, and their quality factors of W(1pF) and inductor(2nH) are 80, 12.5, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.15-20
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• 2007

We fabricated ZnO thin films on quartz substrate using pulsed laser deposition method and investigated structural and optical properties of ZnO thin films with various substrate temperatures. Regardless of the substrate temperature variation, all ZnO thin films had grown to (002) and the thin film deposited at 400 $^{\circ}C$ exhibited an excellent crystallinity having 0.24$^{\circ}$ of Full-Width-Half-Maximum (FWHM). In the result of photoluminescence property, UV and deep-level emission peaks were observed in all ZnO films and the emission peaks were changed with various substrate temperatures. An highest UV emission was exhibited on the specimen deposited at 400 $^{\circ}C$ and the FWHM of UV peak was 14 nm. The optical transmittance was about 85 % in visible region regardless of the substrate temperature. The comparison result of the bandgap energies obtained from optical transmittance and UV emission centers, the two values were about the same. From these results, it is found that UV emission center has close relationship with near band edge emission of ZnO thin film.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.576-581
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• 2005

In this paper. the a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. High k gate dielectric is required for on-current, threshold voltage and breakdown characteristics of TFT Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_3N_4$. Ferroelectric increases on-current and decreases threshold voltage of TFT and also ran improve breakdown characteristics.$SrTiO_4$ thin film is deposited by e-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C\~600^{\circ}C$. Dielectric constant of ferroelectric is about 60-100 and breakdown field is about IMV/cm. In this paper, the TFT using ferroelectric consisted of double layer gate insulator to minimize the leakage current. a-SiN:H, a-Si:H (n-type a-Si:H) are deposited onto $SrTiO_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. In this paper, TFR using ferroelectric has channel length of$8~20{\mu}m$ and channel width of $80~200{\mu}m$. And it shows that drain current is $3.4{\mu}A$at 20 gate voltage, $I_{on}/I_{off}$ is a ratio of $10^5\~10^8,\;and\;V_{th}$ is$4\~5\;volts$, respectively. In the case of TFT without having ferroelectric, it indicates that the drain current is $1.5{\mu}A$ at 20gate voltage and $V_{th}$ is $5\~6$ volts. If properties of the ferroelectric thin film are improved, the performance of TFT using this ferroelectric thin film can be advanced.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.